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Progress in Laser Inscription in Semiconductors by Multiphoton-Initiated Nanosecond Infrared Pulse Absorption.

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Title: Progress in Laser Inscription in Semiconductors by Multiphoton-Initiated Nanosecond Infrared Pulse Absorption.
Authors: Sopeña, Pol1 pol.sopena-martinez@univ-amu.fr, Ganguly, Niladri1, Spühler, Gabriel2, Selivanau, Andrei2, Grojo, David1
Source: Journal of Laser Micro / Nanoengineering. Aug2025, Vol. 20 Issue 2, p119-126. 8p.
Subjects: Semiconductors, Multiphoton absorption, Laser pulses, Laser engraving, Photonics, Silicon industry, Refractive index
Abstract: Recent advances in high-power nanosecond laser sources in the infrared have led to applications in imaging and ranging. Laser processing can also benefit from these as they potentially trigger nonlinear absorption mechanisms expanding the number of processable materials. Particularly in semiconductors, these result in local intensities modest enough to avoid detrimental nonlinear propagation and pre-focal plasma screening typically observed with ultrashort pulses. Nonetheless, they allow initiating local energy deposition by multiphoton absorption and induce permanent modifications. In this work, we evaluate the potential of two nanosecond sources with different wavelengths to induce volume modifications in silicon and other semiconductors. We first review previous experiments performed at 1.55 μm, to later focus on a systematic study at 2.8 μm, and finally compare the results. In both cases, Si bulk modifications are observed. Interestingly, for 2.8 μm compared to 1.55 μm, we report a decrease in the energy threshold for volume modification with depth, reproducible rear surface modification, and the ability to write through Ge layers. With both configurations, we measure a positive refractive index variation of ~0.5%, suitable for writing light-guiding structures. This shows the potential of nanosecond infrared pulses for writing complex 3D structures turned to Si photonics and microelectronics packaging. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Laser Micro / Nanoengineering is the property of Japan Laser Processing Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 188045079
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Progress in Laser Inscription in Semiconductors by Multiphoton-Initiated Nanosecond Infrared Pulse Absorption.
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  Data: <searchLink fieldCode="AR" term="%22Sopeña%2C+Pol%22">Sopeña, Pol</searchLink><relatesTo>1</relatesTo><i> pol.sopena-martinez@univ-amu.fr</i><br /><searchLink fieldCode="AR" term="%22Ganguly%2C+Niladri%22">Ganguly, Niladri</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Spühler%2C+Gabriel%22">Spühler, Gabriel</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Selivanau%2C+Andrei%22">Selivanau, Andrei</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Grojo%2C+David%22">Grojo, David</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Laser+Micro+%2F+Nanoengineering%22">Journal of Laser Micro / Nanoengineering</searchLink>. Aug2025, Vol. 20 Issue 2, p119-126. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Multiphoton+absorption%22">Multiphoton absorption</searchLink><br /><searchLink fieldCode="DE" term="%22Laser+pulses%22">Laser pulses</searchLink><br /><searchLink fieldCode="DE" term="%22Laser+engraving%22">Laser engraving</searchLink><br /><searchLink fieldCode="DE" term="%22Photonics%22">Photonics</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+industry%22">Silicon industry</searchLink><br /><searchLink fieldCode="DE" term="%22Refractive+index%22">Refractive index</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Recent advances in high-power nanosecond laser sources in the infrared have led to applications in imaging and ranging. Laser processing can also benefit from these as they potentially trigger nonlinear absorption mechanisms expanding the number of processable materials. Particularly in semiconductors, these result in local intensities modest enough to avoid detrimental nonlinear propagation and pre-focal plasma screening typically observed with ultrashort pulses. Nonetheless, they allow initiating local energy deposition by multiphoton absorption and induce permanent modifications. In this work, we evaluate the potential of two nanosecond sources with different wavelengths to induce volume modifications in silicon and other semiconductors. We first review previous experiments performed at 1.55 μm, to later focus on a systematic study at 2.8 μm, and finally compare the results. In both cases, Si bulk modifications are observed. Interestingly, for 2.8 μm compared to 1.55 μm, we report a decrease in the energy threshold for volume modification with depth, reproducible rear surface modification, and the ability to write through Ge layers. With both configurations, we measure a positive refractive index variation of ~0.5%, suitable for writing light-guiding structures. This shows the potential of nanosecond infrared pulses for writing complex 3D structures turned to Si photonics and microelectronics packaging. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Laser Micro / Nanoengineering is the property of Japan Laser Processing Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.2961/jlmn.2025.02.2005
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 119
    Subjects:
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Multiphoton absorption
        Type: general
      – SubjectFull: Laser pulses
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      – SubjectFull: Laser engraving
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      – SubjectFull: Photonics
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      – SubjectFull: Silicon industry
        Type: general
      – SubjectFull: Refractive index
        Type: general
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      – TitleFull: Progress in Laser Inscription in Semiconductors by Multiphoton-Initiated Nanosecond Infrared Pulse Absorption.
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            NameFull: Sopeña, Pol
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            – D: 01
              M: 08
              Text: Aug2025
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