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From nano-twinning to the glide of full dislocations: Micropillar compression tests on silicon up to 900 °C.

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Title: From nano-twinning to the glide of full dislocations: Micropillar compression tests on silicon up to 900 °C.
Authors: Schaffar, Gerald J.K.1 (AUTHOR) gerald.schaffar@k-ai.at, Burtscher, Michael1 (AUTHOR), Taylor, Aidan A.2 (AUTHOR), Schrittwieser, Daniel1 (AUTHOR), Tscharnuter, Daniel3 (AUTHOR), Kiener, Daniel1 (AUTHOR), Imrich, Peter J.3 (AUTHOR), Maier–Kiener, Verena1 (AUTHOR)
Source: Materials & Design. Oct2025, Vol. 258, pN.PAG-N.PAG. 1p.
Subjects: Strain rate, Information technology, Low temperatures, Strength of materials, High temperatures
Abstract: [Display omitted] • Lithographically produced, taper-free Si micropillars were compressed uniaxially. • Plasticity data relevant for miniaturized Si structures were gathered up to 900 °C. • The deformation mechanism shifts from twinning to full dislocations. • This transition occurs gradually, driven by high temperatures and low strain rates. • Electroplastic softening and, at 900 °C, even material removal is observed. This work investigates the micromechanical deformation behavior of monocrystalline [1 0 0]-oriented silicon micropillars at high temperatures, focusing on the range between 500 °C and 900 °C. A significant reduction in material strength is observed with increasing temperature. Tests at varying strain rates indicate a change in the deformation mechanism with increasing temperature. Correlative post-deformation TEM characterization was employed to detail the microstructural origins. Indeed, a gradual transition was unveiled. While plasticity is almost exclusively dominated by twinning through the glide of leading Shockley partial dislocations at 500 °C, a gradual transition towards full dislocations is observed with increasing temperature. While this transition has been previously observed in macroscopic samples, this study further delves into the strain rate-dependent high-temperature plasticity of silicon at small scales, reporting valuable mechanistic data highly relevant for miniaturized silicon structures in modern information technology. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:[Display omitted] • Lithographically produced, taper-free Si micropillars were compressed uniaxially. • Plasticity data relevant for miniaturized Si structures were gathered up to 900 °C. • The deformation mechanism shifts from twinning to full dislocations. • This transition occurs gradually, driven by high temperatures and low strain rates. • Electroplastic softening and, at 900 °C, even material removal is observed. This work investigates the micromechanical deformation behavior of monocrystalline [1 0 0]-oriented silicon micropillars at high temperatures, focusing on the range between 500 °C and 900 °C. A significant reduction in material strength is observed with increasing temperature. Tests at varying strain rates indicate a change in the deformation mechanism with increasing temperature. Correlative post-deformation TEM characterization was employed to detail the microstructural origins. Indeed, a gradual transition was unveiled. While plasticity is almost exclusively dominated by twinning through the glide of leading Shockley partial dislocations at 500 °C, a gradual transition towards full dislocations is observed with increasing temperature. While this transition has been previously observed in macroscopic samples, this study further delves into the strain rate-dependent high-temperature plasticity of silicon at small scales, reporting valuable mechanistic data highly relevant for miniaturized silicon structures in modern information technology. [ABSTRACT FROM AUTHOR]
ISSN:02641275
DOI:10.1016/j.matdes.2025.114730