View in EDS

From nano-twinning to the glide of full dislocations: Micropillar compression tests on silicon up to 900 °C.

Saved in:
Bibliographic Details
Title: From nano-twinning to the glide of full dislocations: Micropillar compression tests on silicon up to 900 °C.
Authors: Schaffar, Gerald J.K.1 (AUTHOR) gerald.schaffar@k-ai.at, Burtscher, Michael1 (AUTHOR), Taylor, Aidan A.2 (AUTHOR), Schrittwieser, Daniel1 (AUTHOR), Tscharnuter, Daniel3 (AUTHOR), Kiener, Daniel1 (AUTHOR), Imrich, Peter J.3 (AUTHOR), Maier–Kiener, Verena1 (AUTHOR)
Source: Materials & Design. Oct2025, Vol. 258, pN.PAG-N.PAG. 1p.
Subjects: Strain rate, Information technology, Low temperatures, Strength of materials, High temperatures
Abstract: [Display omitted] • Lithographically produced, taper-free Si micropillars were compressed uniaxially. • Plasticity data relevant for miniaturized Si structures were gathered up to 900 °C. • The deformation mechanism shifts from twinning to full dislocations. • This transition occurs gradually, driven by high temperatures and low strain rates. • Electroplastic softening and, at 900 °C, even material removal is observed. This work investigates the micromechanical deformation behavior of monocrystalline [1 0 0]-oriented silicon micropillars at high temperatures, focusing on the range between 500 °C and 900 °C. A significant reduction in material strength is observed with increasing temperature. Tests at varying strain rates indicate a change in the deformation mechanism with increasing temperature. Correlative post-deformation TEM characterization was employed to detail the microstructural origins. Indeed, a gradual transition was unveiled. While plasticity is almost exclusively dominated by twinning through the glide of leading Shockley partial dislocations at 500 °C, a gradual transition towards full dislocations is observed with increasing temperature. While this transition has been previously observed in macroscopic samples, this study further delves into the strain rate-dependent high-temperature plasticity of silicon at small scales, reporting valuable mechanistic data highly relevant for miniaturized silicon structures in modern information technology. [ABSTRACT FROM AUTHOR]
Copyright of Materials & Design is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 188059000
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: From nano-twinning to the glide of full dislocations: Micropillar compression tests on silicon up to 900 °C.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Schaffar%2C+Gerald+J%2EK%2E%22">Schaffar, Gerald J.K.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> gerald.schaffar@k-ai.at</i><br /><searchLink fieldCode="AR" term="%22Burtscher%2C+Michael%22">Burtscher, Michael</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Taylor%2C+Aidan+A%2E%22">Taylor, Aidan A.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Schrittwieser%2C+Daniel%22">Schrittwieser, Daniel</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tscharnuter%2C+Daniel%22">Tscharnuter, Daniel</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kiener%2C+Daniel%22">Kiener, Daniel</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Imrich%2C+Peter+J%2E%22">Imrich, Peter J.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Maier–Kiener%2C+Verena%22">Maier–Kiener, Verena</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+%26+Design%22">Materials & Design</searchLink>. Oct2025, Vol. 258, pN.PAG-N.PAG. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Strain+rate%22">Strain rate</searchLink><br /><searchLink fieldCode="DE" term="%22Information+technology%22">Information technology</searchLink><br /><searchLink fieldCode="DE" term="%22Low+temperatures%22">Low temperatures</searchLink><br /><searchLink fieldCode="DE" term="%22Strength+of+materials%22">Strength of materials</searchLink><br /><searchLink fieldCode="DE" term="%22High+temperatures%22">High temperatures</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: [Display omitted] • Lithographically produced, taper-free Si micropillars were compressed uniaxially. • Plasticity data relevant for miniaturized Si structures were gathered up to 900 °C. • The deformation mechanism shifts from twinning to full dislocations. • This transition occurs gradually, driven by high temperatures and low strain rates. • Electroplastic softening and, at 900 °C, even material removal is observed. This work investigates the micromechanical deformation behavior of monocrystalline [1 0 0]-oriented silicon micropillars at high temperatures, focusing on the range between 500 °C and 900 °C. A significant reduction in material strength is observed with increasing temperature. Tests at varying strain rates indicate a change in the deformation mechanism with increasing temperature. Correlative post-deformation TEM characterization was employed to detail the microstructural origins. Indeed, a gradual transition was unveiled. While plasticity is almost exclusively dominated by twinning through the glide of leading Shockley partial dislocations at 500 °C, a gradual transition towards full dislocations is observed with increasing temperature. While this transition has been previously observed in macroscopic samples, this study further delves into the strain rate-dependent high-temperature plasticity of silicon at small scales, reporting valuable mechanistic data highly relevant for miniaturized silicon structures in modern information technology. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials & Design is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=188059000
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.matdes.2025.114730
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Strain rate
        Type: general
      – SubjectFull: Information technology
        Type: general
      – SubjectFull: Low temperatures
        Type: general
      – SubjectFull: Strength of materials
        Type: general
      – SubjectFull: High temperatures
        Type: general
    Titles:
      – TitleFull: From nano-twinning to the glide of full dislocations: Micropillar compression tests on silicon up to 900 °C.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Schaffar, Gerald J.K.
      – PersonEntity:
          Name:
            NameFull: Burtscher, Michael
      – PersonEntity:
          Name:
            NameFull: Taylor, Aidan A.
      – PersonEntity:
          Name:
            NameFull: Schrittwieser, Daniel
      – PersonEntity:
          Name:
            NameFull: Tscharnuter, Daniel
      – PersonEntity:
          Name:
            NameFull: Kiener, Daniel
      – PersonEntity:
          Name:
            NameFull: Imrich, Peter J.
      – PersonEntity:
          Name:
            NameFull: Maier–Kiener, Verena
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 10
              Text: Oct2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 02641275
          Numbering:
            – Type: volume
              Value: 258
          Titles:
            – TitleFull: Materials & Design
              Type: main
ResultId 1