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Femtosecond laser-induced microstructuring and color centers in silicon carbide.

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Title: Femtosecond laser-induced microstructuring and color centers in silicon carbide.
Authors: Cunha, Renan1 (AUTHOR) renancunha@ifsc.usp.br, Tasso de Paula, Kelly1 (AUTHOR), Andrade, Marcelo B.1,2 (AUTHOR), Pimenta, Ana Clara S.1 (AUTHOR), Misoguti, Lino1 (AUTHOR), Mendonça, Cleber R.1 (AUTHOR)
Source: Ceramics International. Oct2025:Part C, Vol. 51 Issue 25, p46769-46776. 8p.
Subjects: Multiphoton absorption, Atomic force microscopy, Femtosecond lasers, Refractive index, Light absorption
Abstract: Femtosecond direct laser writing (fs-DLW) is a precise and adaptable micromachining technique widely used for surface modification and defect engineering. It enables deterministic structuring critical for next-generation technologies and facilitates the study of material properties that are otherwise challenging to determine. Here, we investigate the interplay between incubation effects and defect formation in 4H silicon carbide (4H-SiC) under sub-bandgap irradiation. We analyze surface and subsurface structural changes across three incubation regimes using atomic force microscopy, Raman and photoluminescence spectroscopy. Our results show a pulse number-dependent transition in material redistribution, crystalline phase transitions, and the formation of additional silicon phases. We also identify spectral signatures consistent with room-temperature fs-DLW-induced color centers associated with silicon vacancies currently studied as optically addressable solid-state qubits for scalable quantum photonics. We characterize three scenarios for color center generation and discuss the ionization mechanisms driving material modification. Our findings indicate that multiphoton absorption dominates the optical breakdown. Finally, we estimate the nonlinear absorption cross-section and determine the nonlinear refractive index via nonlinear ellipse rotation measurements. [Display omitted] • Interplay between incubation effects and defect formation in 4H-SiC under sub-bandgap irradiation. • The damage threshold and the formation of structural defects depend differently on the number of pulses. • Pulse number-dependent transition in material redistribution and crystalline phases. • Different scenarios for femtosecond laser-induced color centers generation. • Two-photon absorption cross-section and nonlinear refractive index support 4H-SiC as a promising photonic material. [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 188152379
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  Data: Femtosecond laser-induced microstructuring and color centers in silicon carbide.
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  Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. Oct2025:Part C, Vol. 51 Issue 25, p46769-46776. 8p.
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  Data: Femtosecond direct laser writing (fs-DLW) is a precise and adaptable micromachining technique widely used for surface modification and defect engineering. It enables deterministic structuring critical for next-generation technologies and facilitates the study of material properties that are otherwise challenging to determine. Here, we investigate the interplay between incubation effects and defect formation in 4H silicon carbide (4H-SiC) under sub-bandgap irradiation. We analyze surface and subsurface structural changes across three incubation regimes using atomic force microscopy, Raman and photoluminescence spectroscopy. Our results show a pulse number-dependent transition in material redistribution, crystalline phase transitions, and the formation of additional silicon phases. We also identify spectral signatures consistent with room-temperature fs-DLW-induced color centers associated with silicon vacancies currently studied as optically addressable solid-state qubits for scalable quantum photonics. We characterize three scenarios for color center generation and discuss the ionization mechanisms driving material modification. Our findings indicate that multiphoton absorption dominates the optical breakdown. Finally, we estimate the nonlinear absorption cross-section and determine the nonlinear refractive index via nonlinear ellipse rotation measurements. [Display omitted] • Interplay between incubation effects and defect formation in 4H-SiC under sub-bandgap irradiation. • The damage threshold and the formation of structural defects depend differently on the number of pulses. • Pulse number-dependent transition in material redistribution and crystalline phases. • Different scenarios for femtosecond laser-induced color centers generation. • Two-photon absorption cross-section and nonlinear refractive index support 4H-SiC as a promising photonic material. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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              Text: Oct2025:Part C
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