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Impact of Rapid Thermal Processing on Bulk Lifetime and Surface Recombination Velocity of Crystalline Silicon With Passivating Tunnel Oxide Contacts.

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Title: Impact of Rapid Thermal Processing on Bulk Lifetime and Surface Recombination Velocity of Crystalline Silicon With Passivating Tunnel Oxide Contacts.
Authors: Haug, F.‐J.1 (AUTHOR) franz‐josef.haug@epfl.ch, Morisset, A.1 (AUTHOR), Lehmann, M.1 (AUTHOR), Libraro, S.1 (AUTHOR), Genç, E.1 (AUTHOR), Hurni, J.1 (AUTHOR), Ballif, C.1 (AUTHOR)
Source: Progress in Photovoltaics. Sep2025, Vol. 33 Issue 9, p954-961. 8p.
Subjects: Rapid thermal processing, Solar cells, Surface recombination, Deterioration of materials, Silicon crystals, Hydrogenation
Abstract: We investigate rapid thermal processing (RTP) as alternative to the prolonged thermal annealing process used to form tunnel‐oxide passivating contacts for silicon solar cells. The thermal treatment is generally followed by hydrogenation to passivate defects at the Si/SiOx interface. Whereas industrial manufacturing generally uses Cz wafers, research is often carried out with FZ wafers. Both types of wafers are prone to the formation of thermal defects in the bulk. To disentangle effects of the interface and the bulk, we assess the lifetime at different steps of the process sequence for both wafer types. We find that the initial bulk lifetime of our p‐type FZ material is maintained for RTP up to temperatures of about 450°C, followed by a severe decay and eventually a moderate extent of recovery at temperatures above 800°C. Compared to FZ material, the initial bulk lifetimes in our p‐type Cz material are slightly lower, but they are maintained on that level up to about 600°C. Beyond that temperature, the lifetimes also decay, but to a lesser extent than in the FZ material, and there is no curing at higher temperatures. Hydrogenation can partially passivate the bulk defects in FZ material, but the initial state is not recovered. In Cz material, it appears that RTP creates two different types of defects; for those created up to 800°C, the initial state can be recovered by hydrogenation whereas those created at higher temperature cannot be passivated by hydrogenation. We also investigate the formation of n‐type passivating contacts by RTP, and we fabricate solar cell precursors with a single RTP step and the same hydrogenation for both contact polarities. After sputtering a transparent conducting ITO layer on the full area and an Ag metallization, we achieve solar cells efficiencies up to 20.5%. [ABSTRACT FROM AUTHOR]
Copyright of Progress in Photovoltaics is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Impact of Rapid Thermal Processing on Bulk Lifetime and Surface Recombination Velocity of Crystalline Silicon With Passivating Tunnel Oxide Contacts.
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  Data: <searchLink fieldCode="AR" term="%22Haug%2C+F%2E‐J%2E%22">Haug, F.‐J.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> franz‐josef.haug@epfl.ch</i><br /><searchLink fieldCode="AR" term="%22Morisset%2C+A%2E%22">Morisset, A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lehmann%2C+M%2E%22">Lehmann, M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Libraro%2C+S%2E%22">Libraro, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Genç%2C+E%2E%22">Genç, E.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hurni%2C+J%2E%22">Hurni, J.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ballif%2C+C%2E%22">Ballif, C.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Progress+in+Photovoltaics%22">Progress in Photovoltaics</searchLink>. Sep2025, Vol. 33 Issue 9, p954-961. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Rapid+thermal+processing%22">Rapid thermal processing</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+recombination%22">Surface recombination</searchLink><br /><searchLink fieldCode="DE" term="%22Deterioration+of+materials%22">Deterioration of materials</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+crystals%22">Silicon crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogenation%22">Hydrogenation</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: We investigate rapid thermal processing (RTP) as alternative to the prolonged thermal annealing process used to form tunnel‐oxide passivating contacts for silicon solar cells. The thermal treatment is generally followed by hydrogenation to passivate defects at the Si/SiOx interface. Whereas industrial manufacturing generally uses Cz wafers, research is often carried out with FZ wafers. Both types of wafers are prone to the formation of thermal defects in the bulk. To disentangle effects of the interface and the bulk, we assess the lifetime at different steps of the process sequence for both wafer types. We find that the initial bulk lifetime of our p‐type FZ material is maintained for RTP up to temperatures of about 450°C, followed by a severe decay and eventually a moderate extent of recovery at temperatures above 800°C. Compared to FZ material, the initial bulk lifetimes in our p‐type Cz material are slightly lower, but they are maintained on that level up to about 600°C. Beyond that temperature, the lifetimes also decay, but to a lesser extent than in the FZ material, and there is no curing at higher temperatures. Hydrogenation can partially passivate the bulk defects in FZ material, but the initial state is not recovered. In Cz material, it appears that RTP creates two different types of defects; for those created up to 800°C, the initial state can be recovered by hydrogenation whereas those created at higher temperature cannot be passivated by hydrogenation. We also investigate the formation of n‐type passivating contacts by RTP, and we fabricate solar cell precursors with a single RTP step and the same hydrogenation for both contact polarities. After sputtering a transparent conducting ITO layer on the full area and an Ag metallization, we achieve solar cells efficiencies up to 20.5%. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Progress in Photovoltaics is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1002/pip.3894
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        Text: English
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        PageCount: 8
        StartPage: 954
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      – SubjectFull: Rapid thermal processing
        Type: general
      – SubjectFull: Solar cells
        Type: general
      – SubjectFull: Surface recombination
        Type: general
      – SubjectFull: Deterioration of materials
        Type: general
      – SubjectFull: Silicon crystals
        Type: general
      – SubjectFull: Hydrogenation
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      – TitleFull: Impact of Rapid Thermal Processing on Bulk Lifetime and Surface Recombination Velocity of Crystalline Silicon With Passivating Tunnel Oxide Contacts.
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            – D: 01
              M: 09
              Text: Sep2025
              Type: published
              Y: 2025
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