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Interfacial high entropy perovskite Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 quantum dots for enhanced photoelectric response in CuI/CaTiO3 transparent perovskite pn junction via potential regulation and carrier injection.

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Title: Interfacial high entropy perovskite Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 quantum dots for enhanced photoelectric response in CuI/CaTiO3 transparent perovskite pn junction via potential regulation and carrier injection.
Authors: Lv, Xinyan1 (AUTHOR), Yang, Wei1 (AUTHOR), Cai, Zefeng1 (AUTHOR), Cao, Jun1 (AUTHOR), Zheng, Yingying1 (AUTHOR), Wang, Jingjing1 (AUTHOR), Shi, Lei1,2 (AUTHOR), Pan, Jiaqi1 (AUTHOR) panjq@zstu.edu.cn, Liang, Qiang1,3 (AUTHOR) 10333@dzvc.edu.cn, Li, Chaorong1 (AUTHOR) crli@zstu.edu.cn
Source: Ceramics International. Nov2025:Part B, Vol. 51 Issue 27, p53934-53943. 10p.
Subjects: Quantum dots, Photoelectric effect, Perovskite crystallography, Charge transfer, Sol-gel processes, Transparent electronics, Cuprous iodide
Abstract: A transparent pn junction in CuI/Ba(Ti 0.2 Sn 0.2 Zr 0.2 Hf 0.2 Nb 0.2)O 3 quantum dots/CaTiO 3 is synthesized via an approach of sol-gel-sputtering- in situ iodization method. The CuI/BaHEO QDs/CaTiO 3 pn junction achieves high transmittance of ∼85 %, obvious photoelectric enhancement of ∼3.9 × 103-folds to intrinsic CuI/CaTiO 3 (the PCE of ∼1.15 %), decent stability during 6-months. The BaHEO QDs is regarded as the core issue, because besides appropriate Fermi level and high QY, it owns carrier inducing/injecting/driving via B-site Ti-Sn-Zr-Hf-Nb polymetallic ionic metastable state coupling synergism can heighten the dynamic transportation to improve the PCE-transparency balance, including hole inducing by the Cu+/Cu2+ mixed state. Moreover, the CuI owned interfacial contact amelioration and the BaHEO QDs owned interval fillings are beneficial for device stability. [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Interfacial high entropy perovskite Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 quantum dots for enhanced photoelectric response in CuI/CaTiO3 transparent perovskite pn junction via potential regulation and carrier injection.
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  Data: <searchLink fieldCode="AR" term="%22Lv%2C+Xinyan%22">Lv, Xinyan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Wei%22">Yang, Wei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cai%2C+Zefeng%22">Cai, Zefeng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cao%2C+Jun%22">Cao, Jun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zheng%2C+Yingying%22">Zheng, Yingying</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Jingjing%22">Wang, Jingjing</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shi%2C+Lei%22">Shi, Lei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pan%2C+Jiaqi%22">Pan, Jiaqi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> panjq@zstu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Liang%2C+Qiang%22">Liang, Qiang</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<i> 10333@dzvc.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Li%2C+Chaorong%22">Li, Chaorong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> crli@zstu.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. Nov2025:Part B, Vol. 51 Issue 27, p53934-53943. 10p.
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  Data: <searchLink fieldCode="DE" term="%22Quantum+dots%22">Quantum dots</searchLink><br /><searchLink fieldCode="DE" term="%22Photoelectric+effect%22">Photoelectric effect</searchLink><br /><searchLink fieldCode="DE" term="%22Perovskite+crystallography%22">Perovskite crystallography</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+transfer%22">Charge transfer</searchLink><br /><searchLink fieldCode="DE" term="%22Sol-gel+processes%22">Sol-gel processes</searchLink><br /><searchLink fieldCode="DE" term="%22Transparent+electronics%22">Transparent electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Cuprous+iodide%22">Cuprous iodide</searchLink>
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  Label: Abstract
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  Data: A transparent pn junction in CuI/Ba(Ti 0.2 Sn 0.2 Zr 0.2 Hf 0.2 Nb 0.2)O 3 quantum dots/CaTiO 3 is synthesized via an approach of sol-gel-sputtering- in situ iodization method. The CuI/BaHEO QDs/CaTiO 3 pn junction achieves high transmittance of ∼85 %, obvious photoelectric enhancement of ∼3.9 × 103-folds to intrinsic CuI/CaTiO 3 (the PCE of ∼1.15 %), decent stability during 6-months. The BaHEO QDs is regarded as the core issue, because besides appropriate Fermi level and high QY, it owns carrier inducing/injecting/driving via B-site Ti-Sn-Zr-Hf-Nb polymetallic ionic metastable state coupling synergism can heighten the dynamic transportation to improve the PCE-transparency balance, including hole inducing by the Cu+/Cu2+ mixed state. Moreover, the CuI owned interfacial contact amelioration and the BaHEO QDs owned interval fillings are beneficial for device stability. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.ceramint.2025.09.135
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        Text: English
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      – SubjectFull: Perovskite crystallography
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      – SubjectFull: Sol-gel processes
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      – SubjectFull: Transparent electronics
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      – SubjectFull: Cuprous iodide
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      – TitleFull: Interfacial high entropy perovskite Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 quantum dots for enhanced photoelectric response in CuI/CaTiO3 transparent perovskite pn junction via potential regulation and carrier injection.
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              Text: Nov2025:Part B
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