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Tunable single-mode two-section semiconductor lasers with photolithography-patterned low-order surface gratings.

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Title: Tunable single-mode two-section semiconductor lasers with photolithography-patterned low-order surface gratings.
Authors: Hu, Biwei1,2 (AUTHOR), Hu, Zhunhao1,2 (AUTHOR), Dong, Zhong1,2 (AUTHOR), Chen, Youling1,2 (AUTHOR), Xiao, Jinlong1,2 (AUTHOR), Huang, Yongzhen1,2 (AUTHOR), Yang, Yuede1,2 (AUTHOR) yyd@semi.ac.cn
Source: Optics & Laser Technology. Dec2025:Part C, Vol. 192, pN.PAG-N.PAG. 1p.
Subjects: Semiconductor lasers, Optical communications, Wavelengths, Attenuation (Physics), Optical gratings, Photolithography
Abstract: • We demonstrated an active Bragg reflector laser with a surface grating, eliminating the need for epitaxial regrowth. • A low-loss, pure reflectivity spectrum was obtained by optimizing grating parameters through 2D-FEM simulations. • We fabricated a low-cost surface grating with sub-μm slot widths using I-line projection photolithography. • The two-section structure improved mode alignment and enabled a broader wavelength tuning range. • The device demonstrated excellent single-mode output performance, with an SMSR exceeding 58 dB. Low-cost single-mode semiconductor lasers are critical optoelectronic components for optical communication networks. Here, we demonstrate wavelength-tunable single-mode two-section semiconductor lasers. These lasers incorporate optimized low-order surface gratings, fabricated using I-line projection photolithography without requiring epitaxial regrowth. The grating parameters are carefully balanced for simultaneous low optical loss and high reflectivity, thereby directly enhancing device performance. The fabricated laser achieves a maximum side-mode suppression ratio (SMSR) exceeding 58 dB. It maintains stable single-mode operation with an SMSR >50 dB over a 30-mA current-tuning range without mode hopping. Notably, independent current biasing of the two sections enables continuous wavelength tuning over 8.2 nm, highlighting robust tunability. Additionally, the laser delivers an output power exceeding 14 mW and demonstrates a 3-dB modulation bandwidth greater than 10 GHz. [ABSTRACT FROM AUTHOR]
Copyright of Optics & Laser Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 188907576
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
  Group: Ti
  Data: Tunable single-mode two-section semiconductor lasers with photolithography-patterned low-order surface gratings.
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  Data: <searchLink fieldCode="AR" term="%22Hu%2C+Biwei%22">Hu, Biwei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hu%2C+Zhunhao%22">Hu, Zhunhao</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dong%2C+Zhong%22">Dong, Zhong</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Youling%22">Chen, Youling</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xiao%2C+Jinlong%22">Xiao, Jinlong</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Yongzhen%22">Huang, Yongzhen</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Yuede%22">Yang, Yuede</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> yyd@semi.ac.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Optics+%26+Laser+Technology%22">Optics & Laser Technology</searchLink>. Dec2025:Part C, Vol. 192, pN.PAG-N.PAG. 1p.
– Name: Subject
  Label: Subjects
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  Data: <searchLink fieldCode="DE" term="%22Semiconductor+lasers%22">Semiconductor lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+communications%22">Optical communications</searchLink><br /><searchLink fieldCode="DE" term="%22Wavelengths%22">Wavelengths</searchLink><br /><searchLink fieldCode="DE" term="%22Attenuation+%28Physics%29%22">Attenuation (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+gratings%22">Optical gratings</searchLink><br /><searchLink fieldCode="DE" term="%22Photolithography%22">Photolithography</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: • We demonstrated an active Bragg reflector laser with a surface grating, eliminating the need for epitaxial regrowth. • A low-loss, pure reflectivity spectrum was obtained by optimizing grating parameters through 2D-FEM simulations. • We fabricated a low-cost surface grating with sub-μm slot widths using I-line projection photolithography. • The two-section structure improved mode alignment and enabled a broader wavelength tuning range. • The device demonstrated excellent single-mode output performance, with an SMSR exceeding 58 dB. Low-cost single-mode semiconductor lasers are critical optoelectronic components for optical communication networks. Here, we demonstrate wavelength-tunable single-mode two-section semiconductor lasers. These lasers incorporate optimized low-order surface gratings, fabricated using I-line projection photolithography without requiring epitaxial regrowth. The grating parameters are carefully balanced for simultaneous low optical loss and high reflectivity, thereby directly enhancing device performance. The fabricated laser achieves a maximum side-mode suppression ratio (SMSR) exceeding 58 dB. It maintains stable single-mode operation with an SMSR >50 dB over a 30-mA current-tuning range without mode hopping. Notably, independent current biasing of the two sections enables continuous wavelength tuning over 8.2 nm, highlighting robust tunability. Additionally, the laser delivers an output power exceeding 14 mW and demonstrates a 3-dB modulation bandwidth greater than 10 GHz. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Optics & Laser Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.optlastec.2025.113744
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Semiconductor lasers
        Type: general
      – SubjectFull: Optical communications
        Type: general
      – SubjectFull: Wavelengths
        Type: general
      – SubjectFull: Attenuation (Physics)
        Type: general
      – SubjectFull: Optical gratings
        Type: general
      – SubjectFull: Photolithography
        Type: general
    Titles:
      – TitleFull: Tunable single-mode two-section semiconductor lasers with photolithography-patterned low-order surface gratings.
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            NameFull: Hu, Biwei
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            NameFull: Hu, Zhunhao
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            NameFull: Dong, Zhong
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            NameFull: Chen, Youling
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            NameFull: Xiao, Jinlong
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            – D: 12
              M: 12
              Text: Dec2025:Part C
              Type: published
              Y: 2025
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              Value: 192
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            – TitleFull: Optics & Laser Technology
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