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The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices.

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Title: The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices.
Authors: Espiari, Abbas1 (AUTHOR) abbas.espiari@rwth-aachen.de, Padberg, Henriette2 (AUTHOR), Kiehn, Alexander1,3 (AUTHOR), Schnieders, Kristoffer1,2 (AUTHOR), Zhang, Jiayuan2,3 (AUTHOR), Mussler, Gregor1,3 (AUTHOR), Wiefels, Stefan2 (AUTHOR), Jalil, Abdur Rehman1 (AUTHOR), Grützmacher, Detlev1 (AUTHOR)
Source: Materials (1996-1944). Oct2025, Vol. 18 Issue 20, p4681. 11p.
Subjects: Phase change memory, Plasma etching, Electric resistance, Durability, Chemical structure
Abstract: Phase-change memory (PCM) is a promising candidate for in-memory computation and neuromorphic computing due to its high endurance, low cycle-to-cycle variability, and low read noise. However, among other factors, its performance strongly depends on the post-lithography fabrication steps. This study examines the impact of reactive ion etching (RIE) on PCM device performance by evaluating different etching gas mixtures, CHF3:O2, H2:Ar, and Ar, and determining their impact on key device characteristics, particularly initial resistance and cycling stability. The present study demonstrates that a two-step etching approach in which the capping layer is first removed using H2:Ar and the underlying GST layer is subsequently etched using physical Ar sputtering ensures stable and reliable PCM operation. In contrast, chemically reactive gases negatively impact the initial resistance, cycling stability, and device lifetime, likely due to alterations in the material composition. For the cycling stability evaluation, an advanced measurement algorithm utilizing the aixMATRIX setup by aixACCT Systems is employed. This algorithm enables automated testing, dynamically adjusting biasing parameters based on cell responses, ensuring a stable ON/OFF ratio and high-throughput characterization. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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PubTypeId: academicJournal
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  Data: The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices.
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  Data: <searchLink fieldCode="AR" term="%22Espiari%2C+Abbas%22">Espiari, Abbas</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> abbas.espiari@rwth-aachen.de</i><br /><searchLink fieldCode="AR" term="%22Padberg%2C+Henriette%22">Padberg, Henriette</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kiehn%2C+Alexander%22">Kiehn, Alexander</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Schnieders%2C+Kristoffer%22">Schnieders, Kristoffer</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Jiayuan%22">Zhang, Jiayuan</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mussler%2C+Gregor%22">Mussler, Gregor</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wiefels%2C+Stefan%22">Wiefels, Stefan</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jalil%2C+Abdur+Rehman%22">Jalil, Abdur Rehman</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Grützmacher%2C+Detlev%22">Grützmacher, Detlev</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Oct2025, Vol. 18 Issue 20, p4681. 11p.
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  Data: <searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+etching%22">Plasma etching</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+resistance%22">Electric resistance</searchLink><br /><searchLink fieldCode="DE" term="%22Durability%22">Durability</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+structure%22">Chemical structure</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Phase-change memory (PCM) is a promising candidate for in-memory computation and neuromorphic computing due to its high endurance, low cycle-to-cycle variability, and low read noise. However, among other factors, its performance strongly depends on the post-lithography fabrication steps. This study examines the impact of reactive ion etching (RIE) on PCM device performance by evaluating different etching gas mixtures, CHF3:O2, H2:Ar, and Ar, and determining their impact on key device characteristics, particularly initial resistance and cycling stability. The present study demonstrates that a two-step etching approach in which the capping layer is first removed using H2:Ar and the underlying GST layer is subsequently etched using physical Ar sputtering ensures stable and reliable PCM operation. In contrast, chemically reactive gases negatively impact the initial resistance, cycling stability, and device lifetime, likely due to alterations in the material composition. For the cycling stability evaluation, an advanced measurement algorithm utilizing the aixMATRIX setup by aixACCT Systems is employed. This algorithm enables automated testing, dynamically adjusting biasing parameters based on cell responses, ensuring a stable ON/OFF ratio and high-throughput characterization. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/ma18204681
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        Text: English
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        StartPage: 4681
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      – SubjectFull: Phase change memory
        Type: general
      – SubjectFull: Plasma etching
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      – SubjectFull: Electric resistance
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      – SubjectFull: Durability
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      – SubjectFull: Chemical structure
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      – TitleFull: The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices.
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              Text: Oct2025
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