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Analytical Modeling and Validation of Thermal Fatigue Failure in Die Attach Structures for Power Electronics Modules.

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Title: Analytical Modeling and Validation of Thermal Fatigue Failure in Die Attach Structures for Power Electronics Modules.
Authors: Luan, Xinghe1 (AUTHOR), Ding, Liguo2 (AUTHOR), Jiang, Danlei1 (AUTHOR), Li, Xuemin2 (AUTHOR), Zhang, Hongjie2 (AUTHOR), Li, Kewei2 (AUTHOR), Wu, Shaohui3 (AUTHOR), Zhou, Longzao1 (AUTHOR), Wu, Fengshun1 (AUTHOR) fengshunwu@hust.edu.cn
Source: Journal of Electronic Materials. Dec2025, Vol. 54 Issue 12, p11114-11132. 19p.
Subjects: Power electronics, Reliability of electronics, Simulation methods & models, Thermal fatigue, Failure time data analysis, Stress concentration, Structural components, Materials analysis
Abstract: The reliability of the die attach structure in silicon carbide (SiC)-based insulated-gate bipolar transistors (IGBTs) is critical for high-performance power electronics applications, as thermal cycling and mechanical stresses can induce premature failure. In this work, an analytical model was developed to evaluate stress and strain distributions within IGBT modules under cyclic thermal loading conditions. Leveraging established geometric dimensions and material properties of the die, solder, and substrate, the model directly computes the assembly stiffness (K) and the imposed strain (D), thereby eliminating the need for iterative finite element (FE) simulations and significantly reducing computational time. The accuracy of the proposed model was validated through FE simulation. Subsequently, die attach structures were fabricated using lead-rich solder and sintered copper with varying thickness configurations. Experimental validation was conducted to corroborate the model's predictive rationality. Meanwhile, the model proposed in this manuscript was compared with other analytical models and evaluated against alternative lifetime prediction approaches. These results provide critical insights into optimizing die attach design and material selection to enhance the reliability and lifespan of power electronics modules under harsh operating conditions. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 189213204
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
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  Data: Analytical Modeling and Validation of Thermal Fatigue Failure in Die Attach Structures for Power Electronics Modules.
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  Data: <searchLink fieldCode="AR" term="%22Luan%2C+Xinghe%22">Luan, Xinghe</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ding%2C+Liguo%22">Ding, Liguo</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiang%2C+Danlei%22">Jiang, Danlei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Xuemin%22">Li, Xuemin</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Hongjie%22">Zhang, Hongjie</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Kewei%22">Li, Kewei</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+Shaohui%22">Wu, Shaohui</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Longzao%22">Zhou, Longzao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+Fengshun%22">Wu, Fengshun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> fengshunwu@hust.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Dec2025, Vol. 54 Issue 12, p11114-11132. 19p.
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  Data: <searchLink fieldCode="DE" term="%22Power+electronics%22">Power electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Reliability+of+electronics%22">Reliability of electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Simulation+methods+%26+models%22">Simulation methods & models</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+fatigue%22">Thermal fatigue</searchLink><br /><searchLink fieldCode="DE" term="%22Failure+time+data+analysis%22">Failure time data analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Stress+concentration%22">Stress concentration</searchLink><br /><searchLink fieldCode="DE" term="%22Structural+components%22">Structural components</searchLink><br /><searchLink fieldCode="DE" term="%22Materials+analysis%22">Materials analysis</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The reliability of the die attach structure in silicon carbide (SiC)-based insulated-gate bipolar transistors (IGBTs) is critical for high-performance power electronics applications, as thermal cycling and mechanical stresses can induce premature failure. In this work, an analytical model was developed to evaluate stress and strain distributions within IGBT modules under cyclic thermal loading conditions. Leveraging established geometric dimensions and material properties of the die, solder, and substrate, the model directly computes the assembly stiffness (K) and the imposed strain (D), thereby eliminating the need for iterative finite element (FE) simulations and significantly reducing computational time. The accuracy of the proposed model was validated through FE simulation. Subsequently, die attach structures were fabricated using lead-rich solder and sintered copper with varying thickness configurations. Experimental validation was conducted to corroborate the model's predictive rationality. Meanwhile, the model proposed in this manuscript was compared with other analytical models and evaluated against alternative lifetime prediction approaches. These results provide critical insights into optimizing die attach design and material selection to enhance the reliability and lifespan of power electronics modules under harsh operating conditions. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-025-12410-8
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 19
        StartPage: 11114
    Subjects:
      – SubjectFull: Power electronics
        Type: general
      – SubjectFull: Reliability of electronics
        Type: general
      – SubjectFull: Simulation methods & models
        Type: general
      – SubjectFull: Thermal fatigue
        Type: general
      – SubjectFull: Failure time data analysis
        Type: general
      – SubjectFull: Stress concentration
        Type: general
      – SubjectFull: Structural components
        Type: general
      – SubjectFull: Materials analysis
        Type: general
    Titles:
      – TitleFull: Analytical Modeling and Validation of Thermal Fatigue Failure in Die Attach Structures for Power Electronics Modules.
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            NameFull: Luan, Xinghe
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            NameFull: Ding, Liguo
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            NameFull: Jiang, Danlei
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            – D: 01
              M: 12
              Text: Dec2025
              Type: published
              Y: 2025
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