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Flexible Inorganic/Organic Memristor Based on W-Doped MoO x /Poly(methyl methacrylate) Heterostructure.

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Title: Flexible Inorganic/Organic Memristor Based on W-Doped MoO x /Poly(methyl methacrylate) Heterostructure.
Authors: Kalemai, Gion1 (AUTHOR), Aidinis, Konstantinos2,3 (AUTHOR), Sakellis, Elias3,4,5 (AUTHOR), Filippatos, Petros-Panagis4 (AUTHOR), Tsipas, Polychronis4,5 (AUTHOR), Davazoglou, Dimitris1,4 (AUTHOR), Soultati, Anastasia2,4 (AUTHOR) a.soultati@inn.demokritos.gr
Source: Nanomaterials (2079-4991). Nov2025, Vol. 15 Issue 22, p1707. 15p.
Subjects: Memristors, Nonvolatile memory, Heterostructures, Nonvolatile random-access memory, Molybdenum oxides, Charge carrier capture, Polymethylmethacrylate
Abstract: Work investigates the doping of molybdenum oxide (MoOx) with tungsten (W). The successful incorporation of W into the MoOx lattice was confirmed through X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS). Structural and optical analysis revealed the presence of oxygen vacancies within the W-MoOx film, which are known to facilitate resistive switching (RS) in memristive devices. Based on this, a flexible memristor with the structure PET/ITO/W-MoOx/polymethyl methacrylate (PMMA)/Al was fabricated. PMMA was strategically introduced between the W-MoOx layer and the aluminum electrode to modulate interfacial properties that influence RS behavior. The W-MoOx/PMMA-based memristor exhibited good resistive switching characteristics, with a memory window of approximately 12 and a retention time exceeding 2 × 104 s, demonstrating a non-volatile memory behavior. In the high-resistance state (HRS), the conduction mechanism under higher applied voltages follows a space-charge-limited current (SCLC) model, indicating that the RS process is primarily governed by charge trapping and de-trapping at the interface. Overall, the consistent and robust switching performance of the W-MoOx/PMMA heterostructure underlines its potential as a reliable functional layer for next-generation resistive random-access memory (ReRAM) devices. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: Flexible Inorganic/Organic Memristor Based on W-Doped MoO x /Poly(methyl methacrylate) Heterostructure.
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  Data: <searchLink fieldCode="AR" term="%22Kalemai%2C+Gion%22">Kalemai, Gion</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Aidinis%2C+Konstantinos%22">Aidinis, Konstantinos</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sakellis%2C+Elias%22">Sakellis, Elias</searchLink><relatesTo>3,4,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Filippatos%2C+Petros-Panagis%22">Filippatos, Petros-Panagis</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tsipas%2C+Polychronis%22">Tsipas, Polychronis</searchLink><relatesTo>4,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Davazoglou%2C+Dimitris%22">Davazoglou, Dimitris</searchLink><relatesTo>1,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Soultati%2C+Anastasia%22">Soultati, Anastasia</searchLink><relatesTo>2,4</relatesTo> (AUTHOR)<i> a.soultati@inn.demokritos.gr</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Nov2025, Vol. 15 Issue 22, p1707. 15p.
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  Data: <searchLink fieldCode="DE" term="%22Memristors%22">Memristors</searchLink><br /><searchLink fieldCode="DE" term="%22Nonvolatile+memory%22">Nonvolatile memory</searchLink><br /><searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Nonvolatile+random-access+memory%22">Nonvolatile random-access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Molybdenum+oxides%22">Molybdenum oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carrier+capture%22">Charge carrier capture</searchLink><br /><searchLink fieldCode="DE" term="%22Polymethylmethacrylate%22">Polymethylmethacrylate</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Work investigates the doping of molybdenum oxide (MoOx) with tungsten (W). The successful incorporation of W into the MoOx lattice was confirmed through X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS). Structural and optical analysis revealed the presence of oxygen vacancies within the W-MoOx film, which are known to facilitate resistive switching (RS) in memristive devices. Based on this, a flexible memristor with the structure PET/ITO/W-MoOx/polymethyl methacrylate (PMMA)/Al was fabricated. PMMA was strategically introduced between the W-MoOx layer and the aluminum electrode to modulate interfacial properties that influence RS behavior. The W-MoOx/PMMA-based memristor exhibited good resistive switching characteristics, with a memory window of approximately 12 and a retention time exceeding 2 × 104 s, demonstrating a non-volatile memory behavior. In the high-resistance state (HRS), the conduction mechanism under higher applied voltages follows a space-charge-limited current (SCLC) model, indicating that the RS process is primarily governed by charge trapping and de-trapping at the interface. Overall, the consistent and robust switching performance of the W-MoOx/PMMA heterostructure underlines its potential as a reliable functional layer for next-generation resistive random-access memory (ReRAM) devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano15221707
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        Text: English
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        PageCount: 15
        StartPage: 1707
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      – SubjectFull: Memristors
        Type: general
      – SubjectFull: Nonvolatile memory
        Type: general
      – SubjectFull: Heterostructures
        Type: general
      – SubjectFull: Nonvolatile random-access memory
        Type: general
      – SubjectFull: Molybdenum oxides
        Type: general
      – SubjectFull: Charge carrier capture
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      – SubjectFull: Polymethylmethacrylate
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      – TitleFull: Flexible Inorganic/Organic Memristor Based on W-Doped MoO x /Poly(methyl methacrylate) Heterostructure.
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              Text: Nov2025
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