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Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC.

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Title: Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC.
Authors: Vivona, M1 (AUTHOR) marilena.vivona@imm.cnr.it, Greco, G1 (AUTHOR), Spera, M1 (AUTHOR), Fiorenza, P1 (AUTHOR), Giannazzo, F1 (AUTHOR), La Magna, A1 (AUTHOR), Roccaforte, F1 (AUTHOR)
Source: Journal of Physics D: Applied Physics. 11/4/2021, Vol. 54 Issue 44, p1-7. 7p.
Subjects: Schottky barrier, Silicon carbide, Transport theory, Phosphorus, Thermionic emission, Doping agents (Chemistry), Electric currents
Abstract: The electrical behavior of Ni Schottky barrier formed onto heavily doped (N D > 1019 cm−3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current–voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On the other hand, the reverse bias characteristics could not be described by a unique mechanism. In fact, under moderate reverse bias, implantation-induced damage is responsible for the temperature increase in the leakage current, while a pure field emission mechanism is approached with bias increasing. The potential application of metal/4H-SiC contacts on heavily doped layers in real devices is discussed. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The electrical behavior of Ni Schottky barrier formed onto heavily doped (N D > 1019 cm−3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current–voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On the other hand, the reverse bias characteristics could not be described by a unique mechanism. In fact, under moderate reverse bias, implantation-induced damage is responsible for the temperature increase in the leakage current, while a pure field emission mechanism is approached with bias increasing. The potential application of metal/4H-SiC contacts on heavily doped layers in real devices is discussed. [ABSTRACT FROM AUTHOR]
ISSN:00223727
DOI:10.1088/1361-6463/ac13f3