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Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC.

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Title: Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC.
Authors: Vivona, M1 (AUTHOR) marilena.vivona@imm.cnr.it, Greco, G1 (AUTHOR), Spera, M1 (AUTHOR), Fiorenza, P1 (AUTHOR), Giannazzo, F1 (AUTHOR), La Magna, A1 (AUTHOR), Roccaforte, F1 (AUTHOR)
Source: Journal of Physics D: Applied Physics. 11/4/2021, Vol. 54 Issue 44, p1-7. 7p.
Subjects: Schottky barrier, Silicon carbide, Transport theory, Phosphorus, Thermionic emission, Doping agents (Chemistry), Electric currents
Abstract: The electrical behavior of Ni Schottky barrier formed onto heavily doped (N D > 1019 cm−3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current–voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On the other hand, the reverse bias characteristics could not be described by a unique mechanism. In fact, under moderate reverse bias, implantation-induced damage is responsible for the temperature increase in the leakage current, while a pure field emission mechanism is approached with bias increasing. The potential application of metal/4H-SiC contacts on heavily doped layers in real devices is discussed. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Physics D: Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 189702660
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
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  Data: Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC.
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  Data: <searchLink fieldCode="AR" term="%22Vivona%2C+M%22">Vivona, M</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> marilena.vivona@imm.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Greco%2C+G%22">Greco, G</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Spera%2C+M%22">Spera, M</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fiorenza%2C+P%22">Fiorenza, P</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Giannazzo%2C+F%22">Giannazzo, F</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22La+Magna%2C+A%22">La Magna, A</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Roccaforte%2C+F%22">Roccaforte, F</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Physics+D%3A+Applied+Physics%22">Journal of Physics D: Applied Physics</searchLink>. 11/4/2021, Vol. 54 Issue 44, p1-7. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Schottky+barrier%22">Schottky barrier</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Transport+theory%22">Transport theory</searchLink><br /><searchLink fieldCode="DE" term="%22Phosphorus%22">Phosphorus</searchLink><br /><searchLink fieldCode="DE" term="%22Thermionic+emission%22">Thermionic emission</searchLink><br /><searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+currents%22">Electric currents</searchLink>
– Name: Abstract
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  Data: The electrical behavior of Ni Schottky barrier formed onto heavily doped (N D > 1019 cm−3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse bias. The forward current–voltage characterization of Schottky diodes showed that the predominant current transport is a thermionic-field emission mechanism. On the other hand, the reverse bias characteristics could not be described by a unique mechanism. In fact, under moderate reverse bias, implantation-induced damage is responsible for the temperature increase in the leakage current, while a pure field emission mechanism is approached with bias increasing. The potential application of metal/4H-SiC contacts on heavily doped layers in real devices is discussed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Physics D: Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1088/1361-6463/ac13f3
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      – Code: eng
        Text: English
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        PageCount: 7
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    Subjects:
      – SubjectFull: Schottky barrier
        Type: general
      – SubjectFull: Silicon carbide
        Type: general
      – SubjectFull: Transport theory
        Type: general
      – SubjectFull: Phosphorus
        Type: general
      – SubjectFull: Thermionic emission
        Type: general
      – SubjectFull: Doping agents (Chemistry)
        Type: general
      – SubjectFull: Electric currents
        Type: general
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      – TitleFull: Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC.
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            NameFull: Vivona, M
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            NameFull: Greco, G
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            NameFull: Spera, M
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            NameFull: Fiorenza, P
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            – D: 04
              M: 11
              Text: 11/4/2021
              Type: published
              Y: 2021
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              Value: 54
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            – TitleFull: Journal of Physics D: Applied Physics
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