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Effects of layer boundaries on x-ray reflectivity in thermally treated ternary gate dielectrics grown by atomic layer deposition.

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Title: Effects of layer boundaries on x-ray reflectivity in thermally treated ternary gate dielectrics grown by atomic layer deposition.
Authors: Lu, Jong-Hong1 (AUTHOR), Chu, Yen-Ho2 (AUTHOR), Chou, Liang-Pin2 (AUTHOR), Huang, Chung-Lin2 (AUTHOR), Lee, Wen-Lian3 (AUTHOR), Kuo, Wen-Che3 (AUTHOR), Juan, Pi-Chun1,4 (AUTHOR) pcjuan@mail.mcut.edu.tw
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Nov2025, Vol. 43 Issue 6, p1-11. 11p.
Subjects: X-ray reflectometry, Atomic layer deposition, Electric properties, Layer structure (Solids), Dielectric films, Interfaces (Physical sciences)
Abstract: In this study, Si-doped HfO2 (HSO) dielectric films were deposited via thermal atomic layer deposition (ALD) by varying the cycle ratios of SiO2 and HfO2. A carbon-free silicon precursor, trisilylamine (TSA), was employed as the doping source, reacting with ozone to form high-quality SiO2 layers. X-ray reflectivity (XRR) was used to determine key film properties, including thickness, density, surface roughness, and absorptivity in ultrathin films. Although XRR is effective for characterizing layered structures, postdeposition annealing can introduce inaccuracies due to atomic interdiffusion, particularly at low doping levels. To address this, a layer-resolved density model with well-defined interfaces was developed to enable a more accurate analysis of doped high-κ films. The extracted parameters were validated using transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction. XRR results revealed that the doped samples exhibited thicker interfacial layers with higher interfacial layer density and reduced surface roughness compared to pure HfO2, suggesting a lower interface trap density as confirmed by electrical measurements. Furthermore, flatband voltage shifts (ΔVFB) caused by oxide traps showed a correlation with both the Si doping ratio and the overall density of HSO films. These results demonstrate that XRR remains a reliable and insightful technique for evaluating ALD-grown stacks after annealing, offering valuable information prior to detailed structural and electrical characterization. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Header DbId: egs
DbLabel: Engineering Source
An: 189857409
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
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  Data: Effects of layer boundaries on x-ray reflectivity in thermally treated ternary gate dielectrics grown by atomic layer deposition.
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  Data: <searchLink fieldCode="AR" term="%22Lu%2C+Jong-Hong%22">Lu, Jong-Hong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chu%2C+Yen-Ho%22">Chu, Yen-Ho</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chou%2C+Liang-Pin%22">Chou, Liang-Pin</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Chung-Lin%22">Huang, Chung-Lin</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Wen-Lian%22">Lee, Wen-Lian</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kuo%2C+Wen-Che%22">Kuo, Wen-Che</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Juan%2C+Pi-Chun%22">Juan, Pi-Chun</searchLink><relatesTo>1,4</relatesTo> (AUTHOR)<i> pcjuan@mail.mcut.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Nov2025, Vol. 43 Issue 6, p1-11. 11p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22X-ray+reflectometry%22">X-ray reflectometry</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+layer+deposition%22">Atomic layer deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties%22">Electric properties</searchLink><br /><searchLink fieldCode="DE" term="%22Layer+structure+%28Solids%29%22">Layer structure (Solids)</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+films%22">Dielectric films</searchLink><br /><searchLink fieldCode="DE" term="%22Interfaces+%28Physical+sciences%29%22">Interfaces (Physical sciences)</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this study, Si-doped HfO2 (HSO) dielectric films were deposited via thermal atomic layer deposition (ALD) by varying the cycle ratios of SiO2 and HfO2. A carbon-free silicon precursor, trisilylamine (TSA), was employed as the doping source, reacting with ozone to form high-quality SiO2 layers. X-ray reflectivity (XRR) was used to determine key film properties, including thickness, density, surface roughness, and absorptivity in ultrathin films. Although XRR is effective for characterizing layered structures, postdeposition annealing can introduce inaccuracies due to atomic interdiffusion, particularly at low doping levels. To address this, a layer-resolved density model with well-defined interfaces was developed to enable a more accurate analysis of doped high-κ films. The extracted parameters were validated using transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction. XRR results revealed that the doped samples exhibited thicker interfacial layers with higher interfacial layer density and reduced surface roughness compared to pure HfO2, suggesting a lower interface trap density as confirmed by electrical measurements. Furthermore, flatband voltage shifts (ΔVFB) caused by oxide traps showed a correlation with both the Si doping ratio and the overall density of HSO films. These results demonstrate that XRR remains a reliable and insightful technique for evaluating ALD-grown stacks after annealing, offering valuable information prior to detailed structural and electrical characterization. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1116/6.0004737
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 11
        StartPage: 1
    Subjects:
      – SubjectFull: X-ray reflectometry
        Type: general
      – SubjectFull: Atomic layer deposition
        Type: general
      – SubjectFull: Electric properties
        Type: general
      – SubjectFull: Layer structure (Solids)
        Type: general
      – SubjectFull: Dielectric films
        Type: general
      – SubjectFull: Interfaces (Physical sciences)
        Type: general
    Titles:
      – TitleFull: Effects of layer boundaries on x-ray reflectivity in thermally treated ternary gate dielectrics grown by atomic layer deposition.
        Type: main
  BibRelationships:
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      – PersonEntity:
          Name:
            NameFull: Lu, Jong-Hong
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          Name:
            NameFull: Chu, Yen-Ho
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            NameFull: Chou, Liang-Pin
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            NameFull: Huang, Chung-Lin
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            NameFull: Lee, Wen-Lian
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            NameFull: Kuo, Wen-Che
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            NameFull: Juan, Pi-Chun
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          Dates:
            – D: 01
              M: 11
              Text: Nov2025
              Type: published
              Y: 2025
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              Value: 07342101
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              Value: 43
            – Type: issue
              Value: 6
          Titles:
            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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