View in EDS

Microstructure of the subsurface layer formed in monocrystalline silicon during etching with Xe+ ions investigation.

Saved in:
Bibliographic Details
Title: Microstructure of the subsurface layer formed in monocrystalline silicon during etching with Xe+ ions investigation.
Authors: Mikhailenko, Mikhail S.1 (AUTHOR) mikhaylenko@ipmras.ru, Pestov, Alexey E.1 (AUTHOR) mikhaylenko@ipmras.ru, Chernyshev, Aleksei K.1 (AUTHOR), Chkhalo, Nikolay I.1 (AUTHOR), Orlova, Anastasia N.1 (AUTHOR), Zorina, Maria V.1 (AUTHOR), Kumar, Niranjan2,3 (AUTHOR), Goryainov, Sergei V.4 (AUTHOR), Volodin, Vladimir A.2,5 (AUTHOR), Nazarov, Artem A.1 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Nov2025, Vol. 43 Issue 6, p1-8. 8p.
Subjects: Microstructure, Ion beams, Etching techniques, Silicon crystals, Amorphous substances, Raman scattering, Surface roughness
Abstract: Monocrystalline silicon (c-Si) (110) sputtering by Xe+ ions with different energies is studied. The microstructure and depth of the subsurface damaged layer arising during ion beam etching have been studied using Raman scattering spectroscopy with excitation by visible and ultraviolet lasers, small-angle x-ray diffraction, and transmission electron microscopy. A threshold dependence of the effect of Xe+ ions energy on the surface roughness during etching has been found. It is shown that ion beam etching induced the intensity enhancement of a broad spectrum around 490–492 cm−1 originated from the optical mode of phonon near the surface region of c-Si. The origin of this mode was associated with quasi-amorphous Si (q-Si) determined by a shorter correlation length of phonons due to confinement. The roughness of the surface of the c-Si was found to be dependent upon the contribution of the q-Si phase. The depth of the damaged subsurface layer was about 12 nm for etching by Xe+ ions with an energy of 1000 eV, and at an ion energy of 600 eV, the nucleation of a quasi-amorphous phase was observed at a depth of 5–6 nm with preservation of crystallinity below the surface and in volume. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 189857421
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Microstructure of the subsurface layer formed in monocrystalline silicon during etching with Xe<superscript>+</superscript> ions investigation.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Mikhailenko%2C+Mikhail+S%2E%22">Mikhailenko, Mikhail S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mikhaylenko@ipmras.ru</i><br /><searchLink fieldCode="AR" term="%22Pestov%2C+Alexey+E%2E%22">Pestov, Alexey E.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mikhaylenko@ipmras.ru</i><br /><searchLink fieldCode="AR" term="%22Chernyshev%2C+Aleksei+K%2E%22">Chernyshev, Aleksei K.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chkhalo%2C+Nikolay+I%2E%22">Chkhalo, Nikolay I.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Orlova%2C+Anastasia+N%2E%22">Orlova, Anastasia N.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zorina%2C+Maria+V%2E%22">Zorina, Maria V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kumar%2C+Niranjan%22">Kumar, Niranjan</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Goryainov%2C+Sergei+V%2E%22">Goryainov, Sergei V.</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Volodin%2C+Vladimir+A%2E%22">Volodin, Vladimir A.</searchLink><relatesTo>2,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Nazarov%2C+Artem+A%2E%22">Nazarov, Artem A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Nov2025, Vol. 43 Issue 6, p1-8. 8p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Microstructure%22">Microstructure</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+beams%22">Ion beams</searchLink><br /><searchLink fieldCode="DE" term="%22Etching+techniques%22">Etching techniques</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+crystals%22">Silicon crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Amorphous+substances%22">Amorphous substances</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+scattering%22">Raman scattering</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+roughness%22">Surface roughness</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Monocrystalline silicon (c-Si) (110) sputtering by Xe+ ions with different energies is studied. The microstructure and depth of the subsurface damaged layer arising during ion beam etching have been studied using Raman scattering spectroscopy with excitation by visible and ultraviolet lasers, small-angle x-ray diffraction, and transmission electron microscopy. A threshold dependence of the effect of Xe+ ions energy on the surface roughness during etching has been found. It is shown that ion beam etching induced the intensity enhancement of a broad spectrum around 490–492 cm−1 originated from the optical mode of phonon near the surface region of c-Si. The origin of this mode was associated with quasi-amorphous Si (q-Si) determined by a shorter correlation length of phonons due to confinement. The roughness of the surface of the c-Si was found to be dependent upon the contribution of the q-Si phase. The depth of the damaged subsurface layer was about 12 nm for etching by Xe+ ions with an energy of 1000 eV, and at an ion energy of 600 eV, the nucleation of a quasi-amorphous phase was observed at a depth of 5–6 nm with preservation of crystallinity below the surface and in volume. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=189857421
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1116/6.0004851
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 1
    Subjects:
      – SubjectFull: Microstructure
        Type: general
      – SubjectFull: Ion beams
        Type: general
      – SubjectFull: Etching techniques
        Type: general
      – SubjectFull: Silicon crystals
        Type: general
      – SubjectFull: Amorphous substances
        Type: general
      – SubjectFull: Raman scattering
        Type: general
      – SubjectFull: Surface roughness
        Type: general
    Titles:
      – TitleFull: Microstructure of the subsurface layer formed in monocrystalline silicon during etching with Xe+ ions investigation.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Mikhailenko, Mikhail S.
      – PersonEntity:
          Name:
            NameFull: Pestov, Alexey E.
      – PersonEntity:
          Name:
            NameFull: Chernyshev, Aleksei K.
      – PersonEntity:
          Name:
            NameFull: Chkhalo, Nikolay I.
      – PersonEntity:
          Name:
            NameFull: Orlova, Anastasia N.
      – PersonEntity:
          Name:
            NameFull: Zorina, Maria V.
      – PersonEntity:
          Name:
            NameFull: Kumar, Niranjan
      – PersonEntity:
          Name:
            NameFull: Goryainov, Sergei V.
      – PersonEntity:
          Name:
            NameFull: Volodin, Vladimir A.
      – PersonEntity:
          Name:
            NameFull: Nazarov, Artem A.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 11
              Text: Nov2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 07342101
          Numbering:
            – Type: volume
              Value: 43
            – Type: issue
              Value: 6
          Titles:
            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
              Type: main
ResultId 1