Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO 2 /Si/SiO 2 Stack Layers for Resistive Switching Memories.
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| Title: | Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO 2 /Si/SiO 2 Stack Layers for Resistive Switching Memories. |
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| Authors: | Morales-Sánchez, Alfredo1 (AUTHOR) alfredom@inaoep.mx, González-Flores, Karla E.1,2 (AUTHOR), Germán-Martínez, Jesús M.1,3 (AUTHOR), Palacios-Márquez, Braulio1 (AUTHOR), Ramírez-Rios, Juan F.1,2 (AUTHOR), Flores-Méndez, Javier2,3 (AUTHOR), Benítez-Lara, Alfredo1 (AUTHOR), Ramos-Serrano, Juan R.1 (AUTHOR), Hernández-Martínez, Luis1 (AUTHOR), Moreno-Moreno, Mario1 (AUTHOR) |
| Source: | Materials (1996-1944). Dec2025, Vol. 18 Issue 24, p5539. 12p. |
| Subjects: | Silicon oxide films, Multilayers, Heat treatment, Electric conductivity, Dielectric films, Nanocrystals, Memristors |
| Abstract: | This work focuses on developing resistive switching (RS) devices using thermally annealed (TA) SiO2/Si multilayers (ML). Three SiO2/Si bilayers were deposited with an additional 10 nm SiO2 layer as a dielectric barrier layer on top of the ML. The SiO2 layers were 6 nm thick, while the thickness of the Si layers varied from 2, 4, and 6 nm, and were labeled as ML-62, ML-64, and ML-66, respectively. X-ray photoelectron spectroscopy analysis revealed well-defined ML structures before TA. However, after TA, samples ML-64 and ML-62 showed discontinuities due to diffusion between neighboring Si layers, increasing the dimensions of the Si-rich regions. In fact, the concentration of elemental Si (Si0) within the intermediate Si layer increases as the Si layer becomes thinner. Consequently, the size of Si-nanocrystals, created after TA, increases from 6 to 8.5 nm for ML-66 to ML-62, as confirmed by Raman and transmission electron microscopy analysis. The composition discontinuities and loss of the ML structure resulted in erratic electrical behavior, with an electroforming (EF) voltage as high as −14 V in sample ML-62. For the ML-66, which retained the ML structure, the EF voltage was reduced to −4 V, showing SET/RESET values of around ±3 V and stable electrical behavior, with an ON/OFF ratio of up to seven orders of magnitude. This demonstrates the importance of the ML design in the operation of RS devices. [ABSTRACT FROM AUTHOR] |
| Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 190471472 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO 2 /Si/SiO 2 Stack Layers for Resistive Switching Memories. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Morales-Sánchez%2C+Alfredo%22">Morales-Sánchez, Alfredo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> alfredom@inaoep.mx</i><br /><searchLink fieldCode="AR" term="%22González-Flores%2C+Karla+E%2E%22">González-Flores, Karla E.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Germán-Martínez%2C+Jesús+M%2E%22">Germán-Martínez, Jesús M.</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Palacios-Márquez%2C+Braulio%22">Palacios-Márquez, Braulio</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ramírez-Rios%2C+Juan+F%2E%22">Ramírez-Rios, Juan F.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Flores-Méndez%2C+Javier%22">Flores-Méndez, Javier</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Benítez-Lara%2C+Alfredo%22">Benítez-Lara, Alfredo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ramos-Serrano%2C+Juan+R%2E%22">Ramos-Serrano, Juan R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hernández-Martínez%2C+Luis%22">Hernández-Martínez, Luis</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Moreno-Moreno%2C+Mario%22">Moreno-Moreno, Mario</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Dec2025, Vol. 18 Issue 24, p5539. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Silicon+oxide+films%22">Silicon oxide films</searchLink><br /><searchLink fieldCode="DE" term="%22Multilayers%22">Multilayers</searchLink><br /><searchLink fieldCode="DE" term="%22Heat+treatment%22">Heat treatment</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+films%22">Dielectric films</searchLink><br /><searchLink fieldCode="DE" term="%22Nanocrystals%22">Nanocrystals</searchLink><br /><searchLink fieldCode="DE" term="%22Memristors%22">Memristors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This work focuses on developing resistive switching (RS) devices using thermally annealed (TA) SiO2/Si multilayers (ML). Three SiO2/Si bilayers were deposited with an additional 10 nm SiO2 layer as a dielectric barrier layer on top of the ML. The SiO2 layers were 6 nm thick, while the thickness of the Si layers varied from 2, 4, and 6 nm, and were labeled as ML-62, ML-64, and ML-66, respectively. X-ray photoelectron spectroscopy analysis revealed well-defined ML structures before TA. However, after TA, samples ML-64 and ML-62 showed discontinuities due to diffusion between neighboring Si layers, increasing the dimensions of the Si-rich regions. In fact, the concentration of elemental Si (Si0) within the intermediate Si layer increases as the Si layer becomes thinner. Consequently, the size of Si-nanocrystals, created after TA, increases from 6 to 8.5 nm for ML-66 to ML-62, as confirmed by Raman and transmission electron microscopy analysis. The composition discontinuities and loss of the ML structure resulted in erratic electrical behavior, with an electroforming (EF) voltage as high as −14 V in sample ML-62. For the ML-66, which retained the ML structure, the EF voltage was reduced to −4 V, showing SET/RESET values of around ±3 V and stable electrical behavior, with an ON/OFF ratio of up to seven orders of magnitude. This demonstrates the importance of the ML design in the operation of RS devices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/ma18245539 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 5539 Subjects: – SubjectFull: Silicon oxide films Type: general – SubjectFull: Multilayers Type: general – SubjectFull: Heat treatment Type: general – SubjectFull: Electric conductivity Type: general – SubjectFull: Dielectric films Type: general – SubjectFull: Nanocrystals Type: general – SubjectFull: Memristors Type: general Titles: – TitleFull: Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO 2 /Si/SiO 2 Stack Layers for Resistive Switching Memories. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Morales-Sánchez, Alfredo – PersonEntity: Name: NameFull: González-Flores, Karla E. – PersonEntity: Name: NameFull: Germán-Martínez, Jesús M. – PersonEntity: Name: NameFull: Palacios-Márquez, Braulio – PersonEntity: Name: NameFull: Ramírez-Rios, Juan F. – PersonEntity: Name: NameFull: Flores-Méndez, Javier – PersonEntity: Name: NameFull: Benítez-Lara, Alfredo – PersonEntity: Name: NameFull: Ramos-Serrano, Juan R. – PersonEntity: Name: NameFull: Hernández-Martínez, Luis – PersonEntity: Name: NameFull: Moreno-Moreno, Mario IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 12 Text: Dec2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 19961944 Numbering: – Type: volume Value: 18 – Type: issue Value: 24 Titles: – TitleFull: Materials (1996-1944) Type: main |
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