Phase Transition Behavior and Threshold Characteristics of GeTe Thin Films Under Single-Pulse Nanosecond Laser Irradiation.
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| Title: | Phase Transition Behavior and Threshold Characteristics of GeTe Thin Films Under Single-Pulse Nanosecond Laser Irradiation. |
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| Authors: | Li, Yajing1 (AUTHOR), Ma, Xinyu1 (AUTHOR), Chen, Qiang1 (AUTHOR) chenqiang08a@nudt.edu.cn, Qian, Sixian1 (AUTHOR), Jiang, Yixuan1 (AUTHOR), Zheng, Yuejun1 (AUTHOR), Fu, Yunqi1 (AUTHOR) |
| Source: | Materials (1996-1944). Dec2025, Vol. 18 Issue 23, p5466. 13p. |
| Subjects: | Phase transitions, Amorphization, Thin films, Optical switches, Laser beams, Optical engineering, Crystallization |
| Abstract: | Realizing the full potential of optical actuation for high-speed phase-change radio-frequency (RF) switches requires a shift to single-pulse operation. This work presents a systematic investigation of reversible phase transitions in GeTe thin films induced by single 10 ns laser pulses, utilizing spatially resolved characterization techniques, including atomic force microscopy (AFM) and micro-spectroscopy. Precise laser fluence windows for crystallization (12.7–16 mJ/cm2) and amorphization (25.44–41.28 mJ/cm2) are established. A critical finding is that the amorphization process is governed by rapid thermal accumulation, which creates a direct trade-off between achieving the phase transition and avoiding detrimental surface morphology. Specifically, we observe that excessive energy leads to the formation of laser-induced ridges and ablation craters, which are identified as primary causes of device performance degradation. This study elucidates the underlying mechanism of single-pulse-induced phase transitions and provides a practical processing window and design guidelines for developing high-performance, optically actuated GeTe-based RF switches. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Realizing the full potential of optical actuation for high-speed phase-change radio-frequency (RF) switches requires a shift to single-pulse operation. This work presents a systematic investigation of reversible phase transitions in GeTe thin films induced by single 10 ns laser pulses, utilizing spatially resolved characterization techniques, including atomic force microscopy (AFM) and micro-spectroscopy. Precise laser fluence windows for crystallization (12.7–16 mJ/cm2) and amorphization (25.44–41.28 mJ/cm2) are established. A critical finding is that the amorphization process is governed by rapid thermal accumulation, which creates a direct trade-off between achieving the phase transition and avoiding detrimental surface morphology. Specifically, we observe that excessive energy leads to the formation of laser-induced ridges and ablation craters, which are identified as primary causes of device performance degradation. This study elucidates the underlying mechanism of single-pulse-induced phase transitions and provides a practical processing window and design guidelines for developing high-performance, optically actuated GeTe-based RF switches. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 19961944 |
| DOI: | 10.3390/ma18235466 |
