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Phase Transition Behavior and Threshold Characteristics of GeTe Thin Films Under Single-Pulse Nanosecond Laser Irradiation.

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Title: Phase Transition Behavior and Threshold Characteristics of GeTe Thin Films Under Single-Pulse Nanosecond Laser Irradiation.
Authors: Li, Yajing1 (AUTHOR), Ma, Xinyu1 (AUTHOR), Chen, Qiang1 (AUTHOR) chenqiang08a@nudt.edu.cn, Qian, Sixian1 (AUTHOR), Jiang, Yixuan1 (AUTHOR), Zheng, Yuejun1 (AUTHOR), Fu, Yunqi1 (AUTHOR)
Source: Materials (1996-1944). Dec2025, Vol. 18 Issue 23, p5466. 13p.
Subjects: Phase transitions, Amorphization, Thin films, Optical switches, Laser beams, Optical engineering, Crystallization
Abstract: Realizing the full potential of optical actuation for high-speed phase-change radio-frequency (RF) switches requires a shift to single-pulse operation. This work presents a systematic investigation of reversible phase transitions in GeTe thin films induced by single 10 ns laser pulses, utilizing spatially resolved characterization techniques, including atomic force microscopy (AFM) and micro-spectroscopy. Precise laser fluence windows for crystallization (12.7–16 mJ/cm2) and amorphization (25.44–41.28 mJ/cm2) are established. A critical finding is that the amorphization process is governed by rapid thermal accumulation, which creates a direct trade-off between achieving the phase transition and avoiding detrimental surface morphology. Specifically, we observe that excessive energy leads to the formation of laser-induced ridges and ablation craters, which are identified as primary causes of device performance degradation. This study elucidates the underlying mechanism of single-pulse-induced phase transitions and provides a practical processing window and design guidelines for developing high-performance, optically actuated GeTe-based RF switches. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 190517615
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PubTypeId: academicJournal
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  Label: Title
  Group: Ti
  Data: Phase Transition Behavior and Threshold Characteristics of GeTe Thin Films Under Single-Pulse Nanosecond Laser Irradiation.
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  Data: <searchLink fieldCode="AR" term="%22Li%2C+Yajing%22">Li, Yajing</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ma%2C+Xinyu%22">Ma, Xinyu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Qiang%22">Chen, Qiang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> chenqiang08a@nudt.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Qian%2C+Sixian%22">Qian, Sixian</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiang%2C+Yixuan%22">Jiang, Yixuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zheng%2C+Yuejun%22">Zheng, Yuejun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fu%2C+Yunqi%22">Fu, Yunqi</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Dec2025, Vol. 18 Issue 23, p5466. 13p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Phase+transitions%22">Phase transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Amorphization%22">Amorphization</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+switches%22">Optical switches</searchLink><br /><searchLink fieldCode="DE" term="%22Laser+beams%22">Laser beams</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+engineering%22">Optical engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallization%22">Crystallization</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Realizing the full potential of optical actuation for high-speed phase-change radio-frequency (RF) switches requires a shift to single-pulse operation. This work presents a systematic investigation of reversible phase transitions in GeTe thin films induced by single 10 ns laser pulses, utilizing spatially resolved characterization techniques, including atomic force microscopy (AFM) and micro-spectroscopy. Precise laser fluence windows for crystallization (12.7–16 mJ/cm2) and amorphization (25.44–41.28 mJ/cm2) are established. A critical finding is that the amorphization process is governed by rapid thermal accumulation, which creates a direct trade-off between achieving the phase transition and avoiding detrimental surface morphology. Specifically, we observe that excessive energy leads to the formation of laser-induced ridges and ablation craters, which are identified as primary causes of device performance degradation. This study elucidates the underlying mechanism of single-pulse-induced phase transitions and provides a practical processing window and design guidelines for developing high-performance, optically actuated GeTe-based RF switches. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/ma18235466
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 5466
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      – SubjectFull: Phase transitions
        Type: general
      – SubjectFull: Amorphization
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Optical switches
        Type: general
      – SubjectFull: Laser beams
        Type: general
      – SubjectFull: Optical engineering
        Type: general
      – SubjectFull: Crystallization
        Type: general
    Titles:
      – TitleFull: Phase Transition Behavior and Threshold Characteristics of GeTe Thin Films Under Single-Pulse Nanosecond Laser Irradiation.
        Type: main
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          Name:
            NameFull: Li, Yajing
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            NameFull: Ma, Xinyu
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            NameFull: Chen, Qiang
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            NameFull: Qian, Sixian
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            NameFull: Jiang, Yixuan
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            NameFull: Zheng, Yuejun
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            – D: 01
              M: 12
              Text: Dec2025
              Type: published
              Y: 2025
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              Value: 18
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            – TitleFull: Materials (1996-1944)
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