Fabrication and Electrical Characterization of MgZnO/ZTO Thin-Film Transistors.
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| Title: | Fabrication and Electrical Characterization of MgZnO/ZTO Thin-Film Transistors. |
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| Authors: | Hao, Yunpeng1 (AUTHOR), Wang, Chao2,3 (AUTHOR) wangchao@jlju.edu.cn, Guo, Liang2,3 (AUTHOR), Sun, Yu1 (AUTHOR), Jin, Meihua1,2 (AUTHOR), Xu, Linbo1,3 (AUTHOR), Huang, Ying1 (AUTHOR), Zong, Yi1 (AUTHOR), Xu, Xiwen1 (AUTHOR), Zeng, Jingxuan1 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Dec2025, Vol. 15 Issue 23, p1809. 14p. |
| Subjects: | Thin film transistors, Zinc tin oxide, Magnetron sputtering, Semiconductor devices, Zinc oxide, Charge carrier mobility |
| Abstract: | To enhance the electrical performance of MgZnO-TFTs, this study employed radio-frequency (RF) magnetron sputtering to fabricate MgZnO/ZTO thin films. Using these films as the channel layer, bottom-gate top-contact MgZnO/ZTO-TFT devices were constructed. The thin films were characterized using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After optimization, the MgZnO/ZTO-TFT exhibited a high field-effect mobility of 16.80 cm2·V−1·s−1, high Ion/off of 7.63 × 108, threshold voltage of −1.60 V, and subthreshold swing as low as 0.74 V·dec−1. Bias stress stability tests were conducted under positive bias stress (PBS) and negative bias stress (NBS) conditions with a source-drain voltage of 20 V and gate bias stresses (VGS) of +10 V and −10 V, respectively, for a duration of 1000 s. The resulting threshold voltage shifts were only +0.58 V and −0.15 V, respectively, indicating excellent bias stability. These results suggest that the ZTO film, serving as the lower channel layer, effectively enhances carrier transport at the MgZnO/ZTO interface, thereby improving the field-effect mobility and on/off current ratio. Meanwhile, the MgZnO film as the upper channel layer adjusts the device's threshold voltage and enhances its bias stability. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | To enhance the electrical performance of MgZnO-TFTs, this study employed radio-frequency (RF) magnetron sputtering to fabricate MgZnO/ZTO thin films. Using these films as the channel layer, bottom-gate top-contact MgZnO/ZTO-TFT devices were constructed. The thin films were characterized using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After optimization, the MgZnO/ZTO-TFT exhibited a high field-effect mobility of 16.80 cm2·V−1·s−1, high Ion/off of 7.63 × 108, threshold voltage of −1.60 V, and subthreshold swing as low as 0.74 V·dec−1. Bias stress stability tests were conducted under positive bias stress (PBS) and negative bias stress (NBS) conditions with a source-drain voltage of 20 V and gate bias stresses (VGS) of +10 V and −10 V, respectively, for a duration of 1000 s. The resulting threshold voltage shifts were only +0.58 V and −0.15 V, respectively, indicating excellent bias stability. These results suggest that the ZTO film, serving as the lower channel layer, effectively enhances carrier transport at the MgZnO/ZTO interface, thereby improving the field-effect mobility and on/off current ratio. Meanwhile, the MgZnO film as the upper channel layer adjusts the device's threshold voltage and enhances its bias stability. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15231809 |
