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Fabrication and Electrical Characterization of MgZnO/ZTO Thin-Film Transistors.

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Title: Fabrication and Electrical Characterization of MgZnO/ZTO Thin-Film Transistors.
Authors: Hao, Yunpeng1 (AUTHOR), Wang, Chao2,3 (AUTHOR) wangchao@jlju.edu.cn, Guo, Liang2,3 (AUTHOR), Sun, Yu1 (AUTHOR), Jin, Meihua1,2 (AUTHOR), Xu, Linbo1,3 (AUTHOR), Huang, Ying1 (AUTHOR), Zong, Yi1 (AUTHOR), Xu, Xiwen1 (AUTHOR), Zeng, Jingxuan1 (AUTHOR)
Source: Nanomaterials (2079-4991). Dec2025, Vol. 15 Issue 23, p1809. 14p.
Subjects: Thin film transistors, Zinc tin oxide, Magnetron sputtering, Semiconductor devices, Zinc oxide, Charge carrier mobility
Abstract: To enhance the electrical performance of MgZnO-TFTs, this study employed radio-frequency (RF) magnetron sputtering to fabricate MgZnO/ZTO thin films. Using these films as the channel layer, bottom-gate top-contact MgZnO/ZTO-TFT devices were constructed. The thin films were characterized using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After optimization, the MgZnO/ZTO-TFT exhibited a high field-effect mobility of 16.80 cm2·V−1·s−1, high Ion/off of 7.63 × 108, threshold voltage of −1.60 V, and subthreshold swing as low as 0.74 V·dec−1. Bias stress stability tests were conducted under positive bias stress (PBS) and negative bias stress (NBS) conditions with a source-drain voltage of 20 V and gate bias stresses (VGS) of +10 V and −10 V, respectively, for a duration of 1000 s. The resulting threshold voltage shifts were only +0.58 V and −0.15 V, respectively, indicating excellent bias stability. These results suggest that the ZTO film, serving as the lower channel layer, effectively enhances carrier transport at the MgZnO/ZTO interface, thereby improving the field-effect mobility and on/off current ratio. Meanwhile, the MgZnO film as the upper channel layer adjusts the device's threshold voltage and enhances its bias stability. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: Fabrication and Electrical Characterization of MgZnO/ZTO Thin-Film Transistors.
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  Data: <searchLink fieldCode="AR" term="%22Hao%2C+Yunpeng%22">Hao, Yunpeng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Chao%22">Wang, Chao</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<i> wangchao@jlju.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Guo%2C+Liang%22">Guo, Liang</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Yu%22">Sun, Yu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jin%2C+Meihua%22">Jin, Meihua</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Linbo%22">Xu, Linbo</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Ying%22">Huang, Ying</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zong%2C+Yi%22">Zong, Yi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Xiwen%22">Xu, Xiwen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zeng%2C+Jingxuan%22">Zeng, Jingxuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Dec2025, Vol. 15 Issue 23, p1809. 14p.
– Name: Subject
  Label: Subjects
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  Data: <searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+tin+oxide%22">Zinc tin oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+devices%22">Semiconductor devices</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide%22">Zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carrier+mobility%22">Charge carrier mobility</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: To enhance the electrical performance of MgZnO-TFTs, this study employed radio-frequency (RF) magnetron sputtering to fabricate MgZnO/ZTO thin films. Using these films as the channel layer, bottom-gate top-contact MgZnO/ZTO-TFT devices were constructed. The thin films were characterized using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). After optimization, the MgZnO/ZTO-TFT exhibited a high field-effect mobility of 16.80 cm2·V−1·s−1, high Ion/off of 7.63 × 108, threshold voltage of −1.60 V, and subthreshold swing as low as 0.74 V·dec−1. Bias stress stability tests were conducted under positive bias stress (PBS) and negative bias stress (NBS) conditions with a source-drain voltage of 20 V and gate bias stresses (VGS) of +10 V and −10 V, respectively, for a duration of 1000 s. The resulting threshold voltage shifts were only +0.58 V and −0.15 V, respectively, indicating excellent bias stability. These results suggest that the ZTO film, serving as the lower channel layer, effectively enhances carrier transport at the MgZnO/ZTO interface, thereby improving the field-effect mobility and on/off current ratio. Meanwhile, the MgZnO film as the upper channel layer adjusts the device's threshold voltage and enhances its bias stability. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano15231809
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        Text: English
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        PageCount: 14
        StartPage: 1809
    Subjects:
      – SubjectFull: Thin film transistors
        Type: general
      – SubjectFull: Zinc tin oxide
        Type: general
      – SubjectFull: Magnetron sputtering
        Type: general
      – SubjectFull: Semiconductor devices
        Type: general
      – SubjectFull: Zinc oxide
        Type: general
      – SubjectFull: Charge carrier mobility
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      – TitleFull: Fabrication and Electrical Characterization of MgZnO/ZTO Thin-Film Transistors.
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              M: 12
              Text: Dec2025
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