View in EDS HTML Full Text PDF Full Text

Effect of H-Terminated Surfaces on "Silicon-Vacancy" Fluorescence in High-Pressure Nanodiamonds.

Saved in:
Bibliographic Details
Title: Effect of H-Terminated Surfaces on "Silicon-Vacancy" Fluorescence in High-Pressure Nanodiamonds.
Authors: Pasternak, D. G.1 (AUTHOR), Zhivopistsev, A. A.1,2 (AUTHOR), Romshin, A. M.1,3 (AUTHOR), Kudryavtsev, O. S.1 (AUTHOR), Bagramov, R. H.2 (AUTHOR), Filonenko, V. P.2,3 (AUTHOR), Kargin, N. I.3 (AUTHOR), Vlasov, I. I.1 (AUTHOR)
Source: Nanomaterials (2079-4991). Dec2025, Vol. 15 Issue 24, p1842. 10p.
Subjects: Nanodiamonds, Diamond surfaces, Photoluminescence, Nanoparticles, Ionization (Atomic physics), Raman spectroscopy, Fluorescence
Abstract: A new generation of fluorescent diamond nanoparticles synthesized from hydrocarbons at high pressure appears to be promising for the design of efficient single-photon diamond sources and nanometer-sized optical sensors. A characteristic feature of such nanodiamonds (NDs) is the termination of their surface with hydrogen. This hydrogen induces the formation of free holes at the diamond surface, thereby affecting the charge state of nearby fluorescent centers. In this study, the effect of the H-terminated ND surface on negatively charged silicon-vacancy (SiV−) fluorescence as a function of the ND size was investigated. Raman, photoluminescence and scanning electron microscopy techniques were used to characterize the NDs. Diamond nanoparticles of various sizes in the 50–300 nm range were analyzed before and after H desorption from their surface. It was shown that a significant increase in SiV− fluorescence (>50%) upon hydrogen removal starts for particles smaller than 100 nm. The effective thickness of the diamond surface layer, within which charge neutralization of SiV− centers occurs under the hydrogen influence, was determined to be 6 nm. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 190528515
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Effect of H-Terminated Surfaces on "Silicon-Vacancy" Fluorescence in High-Pressure Nanodiamonds.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Pasternak%2C+D%2E+G%2E%22">Pasternak, D. G.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhivopistsev%2C+A%2E+A%2E%22">Zhivopistsev, A. A.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Romshin%2C+A%2E+M%2E%22">Romshin, A. M.</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kudryavtsev%2C+O%2E+S%2E%22">Kudryavtsev, O. S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bagramov%2C+R%2E+H%2E%22">Bagramov, R. H.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Filonenko%2C+V%2E+P%2E%22">Filonenko, V. P.</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kargin%2C+N%2E+I%2E%22">Kargin, N. I.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Vlasov%2C+I%2E+I%2E%22">Vlasov, I. I.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Dec2025, Vol. 15 Issue 24, p1842. 10p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Nanodiamonds%22">Nanodiamonds</searchLink><br /><searchLink fieldCode="DE" term="%22Diamond+surfaces%22">Diamond surfaces</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Nanoparticles%22">Nanoparticles</searchLink><br /><searchLink fieldCode="DE" term="%22Ionization+%28Atomic+physics%29%22">Ionization (Atomic physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Fluorescence%22">Fluorescence</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A new generation of fluorescent diamond nanoparticles synthesized from hydrocarbons at high pressure appears to be promising for the design of efficient single-photon diamond sources and nanometer-sized optical sensors. A characteristic feature of such nanodiamonds (NDs) is the termination of their surface with hydrogen. This hydrogen induces the formation of free holes at the diamond surface, thereby affecting the charge state of nearby fluorescent centers. In this study, the effect of the H-terminated ND surface on negatively charged silicon-vacancy (SiV−) fluorescence as a function of the ND size was investigated. Raman, photoluminescence and scanning electron microscopy techniques were used to characterize the NDs. Diamond nanoparticles of various sizes in the 50–300 nm range were analyzed before and after H desorption from their surface. It was shown that a significant increase in SiV− fluorescence (>50%) upon hydrogen removal starts for particles smaller than 100 nm. The effective thickness of the diamond surface layer, within which charge neutralization of SiV− centers occurs under the hydrogen influence, was determined to be 6 nm. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=190528515
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/nano15241842
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 1842
    Subjects:
      – SubjectFull: Nanodiamonds
        Type: general
      – SubjectFull: Diamond surfaces
        Type: general
      – SubjectFull: Photoluminescence
        Type: general
      – SubjectFull: Nanoparticles
        Type: general
      – SubjectFull: Ionization (Atomic physics)
        Type: general
      – SubjectFull: Raman spectroscopy
        Type: general
      – SubjectFull: Fluorescence
        Type: general
    Titles:
      – TitleFull: Effect of H-Terminated Surfaces on "Silicon-Vacancy" Fluorescence in High-Pressure Nanodiamonds.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Pasternak, D. G.
      – PersonEntity:
          Name:
            NameFull: Zhivopistsev, A. A.
      – PersonEntity:
          Name:
            NameFull: Romshin, A. M.
      – PersonEntity:
          Name:
            NameFull: Kudryavtsev, O. S.
      – PersonEntity:
          Name:
            NameFull: Bagramov, R. H.
      – PersonEntity:
          Name:
            NameFull: Filonenko, V. P.
      – PersonEntity:
          Name:
            NameFull: Kargin, N. I.
      – PersonEntity:
          Name:
            NameFull: Vlasov, I. I.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 12
              Text: Dec2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 20794991
          Numbering:
            – Type: volume
              Value: 15
            – Type: issue
              Value: 24
          Titles:
            – TitleFull: Nanomaterials (2079-4991)
              Type: main
ResultId 1