APA (7th ed.) Citation

Li, S., Wu, M., Yang, L., Lu, H., Hou, B., Zhang, M., . . . Hao, Y. (2025). High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates. Nanomaterials (2079-4991), 15(24), 1882. https://doi.org/10.3390/nano15241882

Chicago Style (17th ed.) Citation

Li, Shiming, Mei Wu, Ling Yang, Hao Lu, Bin Hou, Meng Zhang, Xiaohua Ma, and Yue Hao. "High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates." Nanomaterials (2079-4991) 15, no. 24 (2025): 1882. https://doi.org/10.3390/nano15241882.

MLA (9th ed.) Citation

Li, Shiming, et al. "High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates." Nanomaterials (2079-4991), vol. 15, no. 24, 2025, p. 1882, https://doi.org/10.3390/nano15241882.