High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates.
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| Title: | High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates. |
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| Authors: | Li, Shiming1 (AUTHOR), Wu, Mei1 (AUTHOR) wumei@xidian.edu.cn, Yang, Ling1 (AUTHOR), Lu, Hao1 (AUTHOR), Hou, Bin1 (AUTHOR), Zhang, Meng1 (AUTHOR), Ma, Xiaohua1 (AUTHOR), Hao, Yue1 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Dec2025, Vol. 15 Issue 24, p1882. 13p. |
| Subjects: | Breakdown voltage, Dislocation density, Mechanical efficiency, Power electronics, Transistors, Durability |
| Abstract: | Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in heterogeneous substrates. Herein, we systematically investigate the electrical performance and reliability of GaN-on-GaN HEMTs in comparison to conventional GaN-on-SiC HEMTs via DC characterization, reverse gate step stress, off-state drain step stress, and on-state electrical stress tests. Notably, the homogeneous epitaxial structure of GaN-on-GaN devices reduces dislocation density by 83.3% and minimizes initial tensile stress, which is obtained through HRXRD and Raman spectroscopy. The GaN-on-GaN HEMTs exhibit a record BFOM of 950 MW/cm2, enabled by a low specific on-resistance (RON-SP) of 0.6 mΩ·cm2 and a high breakdown voltage (BV) of 755 V. They withstand gate voltages up to −200 V and drain voltages beyond 200 V without significant degradation, whereas GaN-on-SiC HEMTs fail at −95 V (reverse gate stress) and 150 V (off-state drain stress). The reduced dislocation density suppresses leakage channels and defect-induced degradation, as confirmed by post-stress Schottky/transfer characteristics and Frenkel–Poole emission analysis. These findings establish GaN-on-GaN technology as a transformative solution for power electronics, offering a unique combination of high efficiency and long-term stability for demanding high-voltage applications. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities in heterogeneous substrates. Herein, we systematically investigate the electrical performance and reliability of GaN-on-GaN HEMTs in comparison to conventional GaN-on-SiC HEMTs via DC characterization, reverse gate step stress, off-state drain step stress, and on-state electrical stress tests. Notably, the homogeneous epitaxial structure of GaN-on-GaN devices reduces dislocation density by 83.3% and minimizes initial tensile stress, which is obtained through HRXRD and Raman spectroscopy. The GaN-on-GaN HEMTs exhibit a record BFOM of 950 MW/cm2, enabled by a low specific on-resistance (RON-SP) of 0.6 mΩ·cm2 and a high breakdown voltage (BV) of 755 V. They withstand gate voltages up to −200 V and drain voltages beyond 200 V without significant degradation, whereas GaN-on-SiC HEMTs fail at −95 V (reverse gate stress) and 150 V (off-state drain stress). The reduced dislocation density suppresses leakage channels and defect-induced degradation, as confirmed by post-stress Schottky/transfer characteristics and Frenkel–Poole emission analysis. These findings establish GaN-on-GaN technology as a transformative solution for power electronics, offering a unique combination of high efficiency and long-term stability for demanding high-voltage applications. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15241882 |
