Integrated PbTe Quantum Dots for Two-Color Detection in II–VI Wide-Bandgap Diodes.
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| Title: | Integrated PbTe Quantum Dots for Two-Color Detection in II–VI Wide-Bandgap Diodes. |
|---|---|
| Authors: | Głuch, Jakub M.1 (AUTHOR), Szot, Michał1,2 (AUTHOR), Karczewski, Grzegorz1 (AUTHOR) karcz@ifpan.edu.pl |
| Source: | Nanomaterials (2079-4991). Jan2026, Vol. 15 Issue 1, p7. 8p. |
| Subjects: | Quantum dots, Photodetectors, Infrared radiation, Nanostructures, Spectral sensitivity, Wide gap semiconductors, Molecular beam epitaxy |
| Abstract: | Quantum dots (QDs) composed of the narrow-bandgap semiconductor PbTe were incorporated into the depletion region of p–n junctions based on wide-bandgap II–VI semiconductors (p-ZnTe/n-CdTe). The heterostructures were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates. The depletion region was engineered by depositing 20 alternating thin layers of CdTe and PbTe, then thermal annealing under ultrahigh vacuum. As revealed by cross-sectional scanning electron microscopy (SEM), the initially continuous PbTe layers transformed into arrays of zero-dimensional nanostructures, namely PbTe QDs. The formation of PbTe QDs in a CdTe matrix arises from the structural mismatch between the zinc blende and rock-salt crystal structures of the two materials. Electron beam-induced current (EBIC) scans confirmed that the QDs are localized within the depleted charge region between the p-ZnTe and n-CdTe layers. The resulting wide-gap diodes containing narrow-band QDs show pronounced sensitivity to infrared radiation in the spectral range of 1–4.5 μm, with a peak responsivity of approximately 8 V/W at a wavelength of ~2.0 μm and a temperature of 200 K. A red-shift in the cutoff wavelength when temperature decreases indicates that the infrared (IR) response is governed by band-to-band optical transitions in the PbTe QDs. In addition, the devices show sensitivity to visible radiation, with a maximum responsivity of 20 V/W at 0.69 μm. These results demonstrate that wide-bandgap p–n junctions incorporating narrow-bandgap QDs can function as dual-wavelength (visible and infrared) photodetectors, with potential applications in two-color detection and infrared solar cells. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 190786936 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Integrated PbTe Quantum Dots for Two-Color Detection in II–VI Wide-Bandgap Diodes. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Głuch%2C+Jakub+M%2E%22">Głuch, Jakub M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Szot%2C+Michał%22">Szot, Michał</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Karczewski%2C+Grzegorz%22">Karczewski, Grzegorz</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> karcz@ifpan.edu.pl</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Jan2026, Vol. 15 Issue 1, p7. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Quantum+dots%22">Quantum dots</searchLink><br /><searchLink fieldCode="DE" term="%22Photodetectors%22">Photodetectors</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+radiation%22">Infrared radiation</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructures%22">Nanostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Spectral+sensitivity%22">Spectral sensitivity</searchLink><br /><searchLink fieldCode="DE" term="%22Wide+gap+semiconductors%22">Wide gap semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Quantum dots (QDs) composed of the narrow-bandgap semiconductor PbTe were incorporated into the depletion region of p–n junctions based on wide-bandgap II–VI semiconductors (p-ZnTe/n-CdTe). The heterostructures were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates. The depletion region was engineered by depositing 20 alternating thin layers of CdTe and PbTe, then thermal annealing under ultrahigh vacuum. As revealed by cross-sectional scanning electron microscopy (SEM), the initially continuous PbTe layers transformed into arrays of zero-dimensional nanostructures, namely PbTe QDs. The formation of PbTe QDs in a CdTe matrix arises from the structural mismatch between the zinc blende and rock-salt crystal structures of the two materials. Electron beam-induced current (EBIC) scans confirmed that the QDs are localized within the depleted charge region between the p-ZnTe and n-CdTe layers. The resulting wide-gap diodes containing narrow-band QDs show pronounced sensitivity to infrared radiation in the spectral range of 1–4.5 μm, with a peak responsivity of approximately 8 V/W at a wavelength of ~2.0 μm and a temperature of 200 K. A red-shift in the cutoff wavelength when temperature decreases indicates that the infrared (IR) response is governed by band-to-band optical transitions in the PbTe QDs. In addition, the devices show sensitivity to visible radiation, with a maximum responsivity of 20 V/W at 0.69 μm. These results demonstrate that wide-bandgap p–n junctions incorporating narrow-bandgap QDs can function as dual-wavelength (visible and infrared) photodetectors, with potential applications in two-color detection and infrared solar cells. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano16010007 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 7 Subjects: – SubjectFull: Quantum dots Type: general – SubjectFull: Photodetectors Type: general – SubjectFull: Infrared radiation Type: general – SubjectFull: Nanostructures Type: general – SubjectFull: Spectral sensitivity Type: general – SubjectFull: Wide gap semiconductors Type: general – SubjectFull: Molecular beam epitaxy Type: general Titles: – TitleFull: Integrated PbTe Quantum Dots for Two-Color Detection in II–VI Wide-Bandgap Diodes. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Głuch, Jakub M. – PersonEntity: Name: NameFull: Szot, Michał – PersonEntity: Name: NameFull: Karczewski, Grzegorz IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 15 – Type: issue Value: 1 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
| ResultId | 1 |
