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Impact of transient current on transfer curve in organic electrochemical transistors.

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Title: Impact of transient current on transfer curve in organic electrochemical transistors.
Authors: Lucas Jr, Hélio José1 (AUTHOR) helio.lucas@outlook.com, Serbena, José Pedro Mansueto2 (AUTHOR), Seidel, Keli Fabiana1 (AUTHOR) keliseidel@utfpr.edu.br
Source: Applied Physics A: Materials Science & Processing. Jan2026, Vol. 132 Issue 1, p1-12. 12p.
Subjects: Ion flow dynamics, Charge carriers, Transfer functions, Transients (Dynamics), Organic electrochemistry, Organic field-effect transistors
Abstract: Understanding transient ion dynamics in electrolyte-gated transistors (EGTs) is essential for predicting their electrical behavior. Ions respond slower than charge carriers to electric fields, sometimes causing transient currents that disrupt steady-state operation. Although prior studies focused on transient current and transient time, achieving steady-state conditions during transfer and output curve measurements remains challenging, indicating gaps in the understanding of ion-charge carrier interactions. This work investigates electrical characterization rather than device structure, revealing how scan rate significantly influences transfer curves in organic electrochemical transistors (OECTs), with transient currents impacting its performance. To do it, we fabricated well-established EGTs based on the semiconducting polymer poly(3-hexylthiophene-2,5diyl) (P3HT), focusing on understanding the fundamental processes that occur in device operation rather than optimizing materials or device structure. We also highlight the importance of reporting measurement history, since increasing and decreasing scan rate sequences yield asymmetric results due to retention effects, likely from ion doping. The transient time () was analyzed under square-wave gate voltages, showing to depend also on gate bias, whether into accumulation or transition between accumulation and depletion regimes. These findings demonstrate that EGT's performance is influenced by charge transport regime transitions, scan rates, and prior measurements. Notably, a retention effect suggests that performing a transfer curve at a low scan rate induces permanent changes, which can then be leveraged in subsequent OECT's measurements to achieve faster response time. This study provides new insights into optimizing EGT's operation through controlled ion dynamics. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 190959058
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Impact of transient current on transfer curve in organic electrochemical transistors.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Lucas+Jr%2C+Hélio+José%22">Lucas Jr, Hélio José</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> helio.lucas@outlook.com</i><br /><searchLink fieldCode="AR" term="%22Serbena%2C+José+Pedro+Mansueto%22">Serbena, José Pedro Mansueto</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Seidel%2C+Keli+Fabiana%22">Seidel, Keli Fabiana</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> keliseidel@utfpr.edu.br</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. Jan2026, Vol. 132 Issue 1, p1-12. 12p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Ion+flow+dynamics%22">Ion flow dynamics</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carriers%22">Charge carriers</searchLink><br /><searchLink fieldCode="DE" term="%22Transfer+functions%22">Transfer functions</searchLink><br /><searchLink fieldCode="DE" term="%22Transients+%28Dynamics%29%22">Transients (Dynamics)</searchLink><br /><searchLink fieldCode="DE" term="%22Organic+electrochemistry%22">Organic electrochemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Organic+field-effect+transistors%22">Organic field-effect transistors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Understanding transient ion dynamics in electrolyte-gated transistors (EGTs) is essential for predicting their electrical behavior. Ions respond slower than charge carriers to electric fields, sometimes causing transient currents that disrupt steady-state operation. Although prior studies focused on transient current and transient time, achieving steady-state conditions during transfer and output curve measurements remains challenging, indicating gaps in the understanding of ion-charge carrier interactions. This work investigates electrical characterization rather than device structure, revealing how scan rate significantly influences transfer curves in organic electrochemical transistors (OECTs), with transient currents impacting its performance. To do it, we fabricated well-established EGTs based on the semiconducting polymer poly(3-hexylthiophene-2,5diyl) (P3HT), focusing on understanding the fundamental processes that occur in device operation rather than optimizing materials or device structure. We also highlight the importance of reporting measurement history, since increasing and decreasing scan rate sequences yield asymmetric results due to retention effects, likely from ion doping. The transient time () was analyzed under square-wave gate voltages, showing to depend also on gate bias, whether into accumulation or transition between accumulation and depletion regimes. These findings demonstrate that EGT's performance is influenced by charge transport regime transitions, scan rates, and prior measurements. Notably, a retention effect suggests that performing a transfer curve at a low scan rate induces permanent changes, which can then be leveraged in subsequent OECT's measurements to achieve faster response time. This study provides new insights into optimizing EGT's operation through controlled ion dynamics. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s00339-025-09090-w
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 12
        StartPage: 1
    Subjects:
      – SubjectFull: Ion flow dynamics
        Type: general
      – SubjectFull: Charge carriers
        Type: general
      – SubjectFull: Transfer functions
        Type: general
      – SubjectFull: Transients (Dynamics)
        Type: general
      – SubjectFull: Organic electrochemistry
        Type: general
      – SubjectFull: Organic field-effect transistors
        Type: general
    Titles:
      – TitleFull: Impact of transient current on transfer curve in organic electrochemical transistors.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Lucas Jr, Hélio José
      – PersonEntity:
          Name:
            NameFull: Serbena, José Pedro Mansueto
      – PersonEntity:
          Name:
            NameFull: Seidel, Keli Fabiana
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: Jan2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 09478396
          Numbering:
            – Type: volume
              Value: 132
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Applied Physics A: Materials Science & Processing
              Type: main
ResultId 1