Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter.
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| Title: | Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter. |
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| Authors: | Jia, Minshi1,2 (AUTHOR), Liu, Yaxing1 (AUTHOR), Zhou, Zhigang1 (AUTHOR) zgzhou@hdu.edu.cn, Deng, Tiansong1 (AUTHOR), Zhao, Xiaomei1 (AUTHOR), Wang, Xiao1 (AUTHOR), Yan, Haoming1 (AUTHOR), Boria, Vicente E. (AUTHOR) vboria@dcom.upv.es |
| Source: | International Journal of RF & Microwave Computer-Aided Engineering. 1/22/2026, Vol. 2026, p1-9. 9p. |
| Subjects: | Power amplifiers, Impedance matching, Audio amplifiers, Economic efficiency, Gallium nitride, Microstrip filters, Frequency response, Insertion loss (Telecommunication) |
| Abstract: | In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s parasitic elements. A new compact microstrip LPF, which exhibits a wide stopband with high suppression and a sharp frequency response, also serves as a real‐to‐real impedance matching. It shows less than 0.1 dB insertion loss and greater than 20 dB attenuation in the 4.2–10 GHz frequency range. The proposed PA is designed and fabricated using a CGH40010F GaN high electron mobility transistor (HEMT). The measured result shows that over the frequency band of 0.5–2.9 GHz, the large‐signal gain is bigger than 9.77 dB, the drain efficiency (DE) is 58.2%–76.5%, and the output power is 39.77–42.99 dBm when the input power is 30 dBm. [ABSTRACT FROM AUTHOR] |
| Copyright of International Journal of RF & Microwave Computer-Aided Engineering is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 191138964 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Jia%2C+Minshi%22">Jia, Minshi</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Yaxing%22">Liu, Yaxing</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Zhigang%22">Zhou, Zhigang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> zgzhou@hdu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Deng%2C+Tiansong%22">Deng, Tiansong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhao%2C+Xiaomei%22">Zhao, Xiaomei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Xiao%22">Wang, Xiao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yan%2C+Haoming%22">Yan, Haoming</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Boria%2C+Vicente+E%2E%22">Boria, Vicente E.</searchLink> (AUTHOR)<i> vboria@dcom.upv.es</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22International+Journal+of+RF+%26+Microwave+Computer-Aided+Engineering%22">International Journal of RF & Microwave Computer-Aided Engineering</searchLink>. 1/22/2026, Vol. 2026, p1-9. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Power+amplifiers%22">Power amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Impedance+matching%22">Impedance matching</searchLink><br /><searchLink fieldCode="DE" term="%22Audio+amplifiers%22">Audio amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Economic+efficiency%22">Economic efficiency</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Microstrip+filters%22">Microstrip filters</searchLink><br /><searchLink fieldCode="DE" term="%22Frequency+response%22">Frequency response</searchLink><br /><searchLink fieldCode="DE" term="%22Insertion+loss+%28Telecommunication%29%22">Insertion loss (Telecommunication)</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s parasitic elements. A new compact microstrip LPF, which exhibits a wide stopband with high suppression and a sharp frequency response, also serves as a real‐to‐real impedance matching. It shows less than 0.1 dB insertion loss and greater than 20 dB attenuation in the 4.2–10 GHz frequency range. The proposed PA is designed and fabricated using a CGH40010F GaN high electron mobility transistor (HEMT). The measured result shows that over the frequency band of 0.5–2.9 GHz, the large‐signal gain is bigger than 9.77 dB, the drain efficiency (DE) is 58.2%–76.5%, and the output power is 39.77–42.99 dBm when the input power is 30 dBm. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of International Journal of RF & Microwave Computer-Aided Engineering is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1155/mmce/6789881 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 1 Subjects: – SubjectFull: Power amplifiers Type: general – SubjectFull: Impedance matching Type: general – SubjectFull: Audio amplifiers Type: general – SubjectFull: Economic efficiency Type: general – SubjectFull: Gallium nitride Type: general – SubjectFull: Microstrip filters Type: general – SubjectFull: Frequency response Type: general – SubjectFull: Insertion loss (Telecommunication) Type: general Titles: – TitleFull: Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Jia, Minshi – PersonEntity: Name: NameFull: Liu, Yaxing – PersonEntity: Name: NameFull: Zhou, Zhigang – PersonEntity: Name: NameFull: Deng, Tiansong – PersonEntity: Name: NameFull: Zhao, Xiaomei – PersonEntity: Name: NameFull: Wang, Xiao – PersonEntity: Name: NameFull: Yan, Haoming – PersonEntity: Name: NameFull: Boria, Vicente E. IsPartOfRelationships: – BibEntity: Dates: – D: 22 M: 01 Text: 1/22/2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 10964290 Numbering: – Type: volume Value: 2026 Titles: – TitleFull: International Journal of RF & Microwave Computer-Aided Engineering Type: main |
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