Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter.
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| Title: | Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter. |
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| Authors: | Jia, Minshi1,2 (AUTHOR), Liu, Yaxing1 (AUTHOR), Zhou, Zhigang1 (AUTHOR) zgzhou@hdu.edu.cn, Deng, Tiansong1 (AUTHOR), Zhao, Xiaomei1 (AUTHOR), Wang, Xiao1 (AUTHOR), Yan, Haoming1 (AUTHOR), Boria, Vicente E. (AUTHOR) vboria@dcom.upv.es |
| Source: | International Journal of RF & Microwave Computer-Aided Engineering. 1/22/2026, Vol. 2026, p1-9. 9p. |
| Subjects: | Power amplifiers, Impedance matching, Audio amplifiers, Economic efficiency, Gallium nitride, Microstrip filters, Frequency response, Insertion loss (Telecommunication) |
| Abstract: | In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s parasitic elements. A new compact microstrip LPF, which exhibits a wide stopband with high suppression and a sharp frequency response, also serves as a real‐to‐real impedance matching. It shows less than 0.1 dB insertion loss and greater than 20 dB attenuation in the 4.2–10 GHz frequency range. The proposed PA is designed and fabricated using a CGH40010F GaN high electron mobility transistor (HEMT). The measured result shows that over the frequency band of 0.5–2.9 GHz, the large‐signal gain is bigger than 9.77 dB, the drain efficiency (DE) is 58.2%–76.5%, and the output power is 39.77–42.99 dBm when the input power is 30 dBm. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s parasitic elements. A new compact microstrip LPF, which exhibits a wide stopband with high suppression and a sharp frequency response, also serves as a real‐to‐real impedance matching. It shows less than 0.1 dB insertion loss and greater than 20 dB attenuation in the 4.2–10 GHz frequency range. The proposed PA is designed and fabricated using a CGH40010F GaN high electron mobility transistor (HEMT). The measured result shows that over the frequency band of 0.5–2.9 GHz, the large‐signal gain is bigger than 9.77 dB, the drain efficiency (DE) is 58.2%–76.5%, and the output power is 39.77–42.99 dBm when the input power is 30 dBm. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 10964290 |
| DOI: | 10.1155/mmce/6789881 |
