Effect of Crystal Orientation on Dislocation Loop Evolution Under Electron Radiation in Pure Aluminum.
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| Title: | Effect of Crystal Orientation on Dislocation Loop Evolution Under Electron Radiation in Pure Aluminum. |
|---|---|
| Authors: | Yin, Yupeng1 (AUTHOR), Feng, Qianfei1,2 (AUTHOR), Han, Wentuo1,2,3 (AUTHOR) han-wt@ustb.edu.cn, Yi, Xiaoou1,4 (AUTHOR), Liu, Pingping1 (AUTHOR), Yoshida, Kenta2,3 (AUTHOR), Inoue, Koji3 (AUTHOR), Zhan, Qian1,2,4 (AUTHOR), Ohnuki, Somei1,4 (AUTHOR), Wan, Farong1 (AUTHOR) |
| Source: | Materials (1996-1944). Jan2026, Vol. 19 Issue 2, p350. 17p. |
| Subjects: | Crystal orientation, Dislocation loops, Radiation damage, Aerospace materials, Aluminum, Electron density, Threshold energy, Electron emission |
| Abstract: | Aluminum, the primary structural material used in spacecraft, operates in low Earth orbit (LEO). It is subjected to high-energy electron irradiation with energies ranging from 0.1 to 10 MeV, which produces significant irradiation damage. Understanding the characteristics of irradiation defects with crystallographic orientations is crucial for analyzing the failure of spacecraft components and for developing aerospace materials with improved irradiation resistance. In this study, pure aluminum was irradiated in situ at room temperature using 200 kV transmission electron microscopy. The irradiation defects were comparatively analyzed for four crystallographic orientations, focusing on the size, density, and interstitial content of <111> and <110> dislocation loops. For all four irradiation directions, the interstitial atom density (IAD) within <111> loops is significantly higher than that in <110> loops. Notably, under [110]-direction irradiation, IAD in <111> loops is approximately 55 times that in <110> loops. This phenomenon is attributed to the one-dimensional migration of <110> loops. Among the four irradiation directions, the total IAD in the two types of loops decreases in the order: [110] > [111] > [310] > [100]. The threshold displacement energy (Ed) of aluminum at room temperature is inferred to follow the relationship: [110] < [111] < [310] < [100]. [ABSTRACT FROM AUTHOR] |
| Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Header | DbId: egs DbLabel: Engineering Source An: 191174584 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Effect of Crystal Orientation on Dislocation Loop Evolution Under Electron Radiation in Pure Aluminum. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Yin%2C+Yupeng%22">Yin, Yupeng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Feng%2C+Qianfei%22">Feng, Qianfei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Han%2C+Wentuo%22">Han, Wentuo</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> han-wt@ustb.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Yi%2C+Xiaoou%22">Yi, Xiaoou</searchLink><relatesTo>1,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Pingping%22">Liu, Pingping</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yoshida%2C+Kenta%22">Yoshida, Kenta</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Inoue%2C+Koji%22">Inoue, Koji</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhan%2C+Qian%22">Zhan, Qian</searchLink><relatesTo>1,2,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ohnuki%2C+Somei%22">Ohnuki, Somei</searchLink><relatesTo>1,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wan%2C+Farong%22">Wan, Farong</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Jan2026, Vol. 19 Issue 2, p350. 17p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Crystal+orientation%22">Crystal orientation</searchLink><br /><searchLink fieldCode="DE" term="%22Dislocation+loops%22">Dislocation loops</searchLink><br /><searchLink fieldCode="DE" term="%22Radiation+damage%22">Radiation damage</searchLink><br /><searchLink fieldCode="DE" term="%22Aerospace+materials%22">Aerospace materials</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum%22">Aluminum</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+density%22">Electron density</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+energy%22">Threshold energy</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+emission%22">Electron emission</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Aluminum, the primary structural material used in spacecraft, operates in low Earth orbit (LEO). It is subjected to high-energy electron irradiation with energies ranging from 0.1 to 10 MeV, which produces significant irradiation damage. Understanding the characteristics of irradiation defects with crystallographic orientations is crucial for analyzing the failure of spacecraft components and for developing aerospace materials with improved irradiation resistance. In this study, pure aluminum was irradiated in situ at room temperature using 200 kV transmission electron microscopy. The irradiation defects were comparatively analyzed for four crystallographic orientations, focusing on the size, density, and interstitial content of <111> and <110> dislocation loops. For all four irradiation directions, the interstitial atom density (IAD) within <111> loops is significantly higher than that in <110> loops. Notably, under [110]-direction irradiation, IAD in <111> loops is approximately 55 times that in <110> loops. This phenomenon is attributed to the one-dimensional migration of <110> loops. Among the four irradiation directions, the total IAD in the two types of loops decreases in the order: [110] > [111] > [310] > [100]. The threshold displacement energy (Ed) of aluminum at room temperature is inferred to follow the relationship: [110] < [111] < [310] < [100]. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/ma19020350 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 17 StartPage: 350 Subjects: – SubjectFull: Crystal orientation Type: general – SubjectFull: Dislocation loops Type: general – SubjectFull: Radiation damage Type: general – SubjectFull: Aerospace materials Type: general – SubjectFull: Aluminum Type: general – SubjectFull: Electron density Type: general – SubjectFull: Threshold energy Type: general – SubjectFull: Electron emission Type: general Titles: – TitleFull: Effect of Crystal Orientation on Dislocation Loop Evolution Under Electron Radiation in Pure Aluminum. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Yin, Yupeng – PersonEntity: Name: NameFull: Feng, Qianfei – PersonEntity: Name: NameFull: Han, Wentuo – PersonEntity: Name: NameFull: Yi, Xiaoou – PersonEntity: Name: NameFull: Liu, Pingping – PersonEntity: Name: NameFull: Yoshida, Kenta – PersonEntity: Name: NameFull: Inoue, Koji – PersonEntity: Name: NameFull: Zhan, Qian – PersonEntity: Name: NameFull: Ohnuki, Somei – PersonEntity: Name: NameFull: Wan, Farong IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 01 Text: Jan2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 19961944 Numbering: – Type: volume Value: 19 – Type: issue Value: 2 Titles: – TitleFull: Materials (1996-1944) Type: main |
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