Effect of Crystal Orientation on Dislocation Loop Evolution Under Electron Radiation in Pure Aluminum.

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Title: Effect of Crystal Orientation on Dislocation Loop Evolution Under Electron Radiation in Pure Aluminum.
Authors: Yin, Yupeng1 (AUTHOR), Feng, Qianfei1,2 (AUTHOR), Han, Wentuo1,2,3 (AUTHOR) han-wt@ustb.edu.cn, Yi, Xiaoou1,4 (AUTHOR), Liu, Pingping1 (AUTHOR), Yoshida, Kenta2,3 (AUTHOR), Inoue, Koji3 (AUTHOR), Zhan, Qian1,2,4 (AUTHOR), Ohnuki, Somei1,4 (AUTHOR), Wan, Farong1 (AUTHOR)
Source: Materials (1996-1944). Jan2026, Vol. 19 Issue 2, p350. 17p.
Subjects: Crystal orientation, Dislocation loops, Radiation damage, Aerospace materials, Aluminum, Electron density, Threshold energy, Electron emission
Abstract: Aluminum, the primary structural material used in spacecraft, operates in low Earth orbit (LEO). It is subjected to high-energy electron irradiation with energies ranging from 0.1 to 10 MeV, which produces significant irradiation damage. Understanding the characteristics of irradiation defects with crystallographic orientations is crucial for analyzing the failure of spacecraft components and for developing aerospace materials with improved irradiation resistance. In this study, pure aluminum was irradiated in situ at room temperature using 200 kV transmission electron microscopy. The irradiation defects were comparatively analyzed for four crystallographic orientations, focusing on the size, density, and interstitial content of <111> and <110> dislocation loops. For all four irradiation directions, the interstitial atom density (IAD) within <111> loops is significantly higher than that in <110> loops. Notably, under [110]-direction irradiation, IAD in <111> loops is approximately 55 times that in <110> loops. This phenomenon is attributed to the one-dimensional migration of <110> loops. Among the four irradiation directions, the total IAD in the two types of loops decreases in the order: [110] > [111] > [310] > [100]. The threshold displacement energy (Ed) of aluminum at room temperature is inferred to follow the relationship: [110] < [111] < [310] < [100]. [ABSTRACT FROM AUTHOR]
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  Label: Title
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  Data: Effect of Crystal Orientation on Dislocation Loop Evolution Under Electron Radiation in Pure Aluminum.
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  Data: &lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Yin%2C+Yupeng%22&quot;&gt;Yin, Yupeng&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Feng%2C+Qianfei%22&quot;&gt;Feng, Qianfei&lt;/searchLink&gt;&lt;relatesTo&gt;1,2&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Han%2C+Wentuo%22&quot;&gt;Han, Wentuo&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,3&lt;/relatesTo&gt; (AUTHOR)&lt;i&gt; han-wt@ustb.edu.cn&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Yi%2C+Xiaoou%22&quot;&gt;Yi, Xiaoou&lt;/searchLink&gt;&lt;relatesTo&gt;1,4&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Liu%2C+Pingping%22&quot;&gt;Liu, Pingping&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Yoshida%2C+Kenta%22&quot;&gt;Yoshida, Kenta&lt;/searchLink&gt;&lt;relatesTo&gt;2,3&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Inoue%2C+Koji%22&quot;&gt;Inoue, Koji&lt;/searchLink&gt;&lt;relatesTo&gt;3&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Zhan%2C+Qian%22&quot;&gt;Zhan, Qian&lt;/searchLink&gt;&lt;relatesTo&gt;1,2,4&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Ohnuki%2C+Somei%22&quot;&gt;Ohnuki, Somei&lt;/searchLink&gt;&lt;relatesTo&gt;1,4&lt;/relatesTo&gt; (AUTHOR)&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Wan%2C+Farong%22&quot;&gt;Wan, Farong&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt; (AUTHOR)
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Materials+%281996-1944%29%22&quot;&gt;Materials (1996-1944)&lt;/searchLink&gt;. Jan2026, Vol. 19 Issue 2, p350. 17p.
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  Data: &lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Crystal+orientation%22&quot;&gt;Crystal orientation&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Dislocation+loops%22&quot;&gt;Dislocation loops&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Radiation+damage%22&quot;&gt;Radiation damage&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Aerospace+materials%22&quot;&gt;Aerospace materials&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Aluminum%22&quot;&gt;Aluminum&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Electron+density%22&quot;&gt;Electron density&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Threshold+energy%22&quot;&gt;Threshold energy&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Electron+emission%22&quot;&gt;Electron emission&lt;/searchLink&gt;
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Aluminum, the primary structural material used in spacecraft, operates in low Earth orbit (LEO). It is subjected to high-energy electron irradiation with energies ranging from 0.1 to 10 MeV, which produces significant irradiation damage. Understanding the characteristics of irradiation defects with crystallographic orientations is crucial for analyzing the failure of spacecraft components and for developing aerospace materials with improved irradiation resistance. In this study, pure aluminum was irradiated in situ at room temperature using 200 kV transmission electron microscopy. The irradiation defects were comparatively analyzed for four crystallographic orientations, focusing on the size, density, and interstitial content of &lt;111&gt; and &lt;110&gt; dislocation loops. For all four irradiation directions, the interstitial atom density (IAD) within &lt;111&gt; loops is significantly higher than that in &lt;110&gt; loops. Notably, under [110]-direction irradiation, IAD in &lt;111&gt; loops is approximately 55 times that in &lt;110&gt; loops. This phenomenon is attributed to the one-dimensional migration of &lt;110&gt; loops. Among the four irradiation directions, the total IAD in the two types of loops decreases in the order: [110] &gt; [111] &gt; [310] &gt; [100]. The threshold displacement energy (Ed) of aluminum at room temperature is inferred to follow the relationship: [110] &lt; [111] &lt; [310] &lt; [100]. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: &lt;i&gt;Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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    Identifiers:
      – Type: doi
        Value: 10.3390/ma19020350
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 17
        StartPage: 350
    Subjects:
      – SubjectFull: Crystal orientation
        Type: general
      – SubjectFull: Dislocation loops
        Type: general
      – SubjectFull: Radiation damage
        Type: general
      – SubjectFull: Aerospace materials
        Type: general
      – SubjectFull: Aluminum
        Type: general
      – SubjectFull: Electron density
        Type: general
      – SubjectFull: Threshold energy
        Type: general
      – SubjectFull: Electron emission
        Type: general
    Titles:
      – TitleFull: Effect of Crystal Orientation on Dislocation Loop Evolution Under Electron Radiation in Pure Aluminum.
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            NameFull: Yin, Yupeng
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            – D: 15
              M: 01
              Text: Jan2026
              Type: published
              Y: 2026
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