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Leakage current and deep levels in CoSi2 silicided junctions

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Title: Leakage current and deep levels in CoSi2 silicided junctions
Authors: Codegoni, D.1, Carnevale, G.P.1, De Marco, C.1, Mica, I.1, Polignano, M.L. marialuisa.polignano@st.com
Source: Materials Science & Engineering: B. Dec2005, Vol. 124-125, p349-353. 5p.
Subjects: Cobalt, Transition metals, Spectrum analysis, Deep level transient spectroscopy
Abstract: Abstract: In this work the leakage current of junctions with a self-aligned cobalt silicide is studied. It is shown that junctions with a self-aligned CoSi2 layer show a leakage current excess which is strongly reduced by increasing the PAI energy. This indicates that the observed leakage current excess is related to the CoSi2 formation conditions. The mechanism responsible for the leakage of CoSi2 junctions is investigated by current versus temperature measurements and by deep level transient spectroscopy. In addition, the role of the mechanical stress is investigated by comparing different isolation structures and by numerical stress calculations. It is concluded that the shallow trench isolation (STI) induced stress and the cobalt silicide formation concur to produce a junction leakage current increase by creating a deep level in silicon located close to midgap. This level can possibly identified with a level ascribed to a point defect excess. [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
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Header DbId: egs
DbLabel: Engineering Source
An: 19120026
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Leakage current and deep levels in CoSi<subscript>2</subscript> silicided junctions
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  Data: <searchLink fieldCode="AR" term="%22Codegoni%2C+D%2E%22">Codegoni, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Carnevale%2C+G%2EP%2E%22">Carnevale, G.P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22De+Marco%2C+C%2E%22">De Marco, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mica%2C+I%2E%22">Mica, I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Polignano%2C+M%2EL%2E%22">Polignano, M.L.</searchLink><i> marialuisa.polignano@st.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Dec2005, Vol. 124-125, p349-353. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Cobalt%22">Cobalt</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+metals%22">Transition metals</searchLink><br /><searchLink fieldCode="DE" term="%22Spectrum+analysis%22">Spectrum analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Deep+level+transient+spectroscopy%22">Deep level transient spectroscopy</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Abstract: In this work the leakage current of junctions with a self-aligned cobalt silicide is studied. It is shown that junctions with a self-aligned CoSi2 layer show a leakage current excess which is strongly reduced by increasing the PAI energy. This indicates that the observed leakage current excess is related to the CoSi2 formation conditions. The mechanism responsible for the leakage of CoSi2 junctions is investigated by current versus temperature measurements and by deep level transient spectroscopy. In addition, the role of the mechanical stress is investigated by comparing different isolation structures and by numerical stress calculations. It is concluded that the shallow trench isolation (STI) induced stress and the cobalt silicide formation concur to produce a junction leakage current increase by creating a deep level in silicon located close to midgap. This level can possibly identified with a level ascribed to a point defect excess. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.mseb.2005.08.125
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        Text: English
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      – SubjectFull: Transition metals
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      – SubjectFull: Spectrum analysis
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      – SubjectFull: Deep level transient spectroscopy
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      – TitleFull: Leakage current and deep levels in CoSi2 silicided junctions
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              Text: Dec2005
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              Y: 2005
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