APA (7th ed.) Citation

Castrillo, P., Martin-Bragado, I., Pinacho, R., Jaraiz, M., Rubio, J., Mok, K., . . . Barbolla, J. (2005). Physically based modeling of dislocation loops in ion implantation processing in silicon. Materials Science & Engineering: B, 124-125, 404. https://doi.org/10.1016/j.mseb.2005.08.119

Chicago Style (17th ed.) Citation

Castrillo, P., I. Martin-Bragado, R. Pinacho, M. Jaraiz, J.E Rubio, K.R.C Mok, F.J Miguel-Herrero, and J. Barbolla. "Physically Based Modeling of Dislocation Loops in Ion Implantation Processing in Silicon." Materials Science & Engineering: B 124-125 (2005): 404. https://doi.org/10.1016/j.mseb.2005.08.119.

MLA (9th ed.) Citation

Castrillo, P., et al. "Physically Based Modeling of Dislocation Loops in Ion Implantation Processing in Silicon." Materials Science & Engineering: B, vol. 124-125, 2005, p. 404, https://doi.org/10.1016/j.mseb.2005.08.119.