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Physically based modeling of dislocation loops in ion implantation processing in silicon

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Title: Physically based modeling of dislocation loops in ion implantation processing in silicon
Authors: Castrillo, P.1 Pedro.Castrillo@tel.uva.es, Martin-Bragado, I.1,2, Pinacho, R.1, Jaraiz, M.1, Rubio, J.E.1, Mok, K.R.C.1,3, Miguel-Herrero, F.J.1, Barbolla, J.1
Source: Materials Science & Engineering: B. Dec2005, Vol. 124-125, p404-408. 5p.
Subjects: Ion implantation, Ion bombardment, Ion plating, Heat treatment of metals
Abstract: Abstract: Under certain conditions, particularly for high-dose implants, {311} rod-like defects can evolve into dislocation loops (DLs). In this work, we have developed a model for the transformation of {311}-defects into DLs, with a transformation rate that is controlled by a size-dependent energy barrier. The model has been included and calibrated in an atomistic kinetic Monte Carlo simulator. This simulator includes a description of the size distribution of {311}-defects (required for a size-based model) and of the amorphization and recrystallization (needed to provide reliable information on the number of interstitials in the end-of-range region). Extended defects are implemented according to realistic geometries, giving a direct assessment of the correct capture volume for diffusing defects. The model correctly predicts the formation of DLs during the annealing that follows ion implants, both for amorphizing and non-amorphizing conditions, and provides a realistic description of damage morphology. The possible role of stress on DL formation is also discussed. [Copyright &y& Elsevier]
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Database: Engineering Source
Description
Abstract:Abstract: Under certain conditions, particularly for high-dose implants, {311} rod-like defects can evolve into dislocation loops (DLs). In this work, we have developed a model for the transformation of {311}-defects into DLs, with a transformation rate that is controlled by a size-dependent energy barrier. The model has been included and calibrated in an atomistic kinetic Monte Carlo simulator. This simulator includes a description of the size distribution of {311}-defects (required for a size-based model) and of the amorphization and recrystallization (needed to provide reliable information on the number of interstitials in the end-of-range region). Extended defects are implemented according to realistic geometries, giving a direct assessment of the correct capture volume for diffusing defects. The model correctly predicts the formation of DLs during the annealing that follows ion implants, both for amorphizing and non-amorphizing conditions, and provides a realistic description of damage morphology. The possible role of stress on DL formation is also discussed. [Copyright &y& Elsevier]
ISSN:09215107
DOI:10.1016/j.mseb.2005.08.119