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Physically based modeling of dislocation loops in ion implantation processing in silicon

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Title: Physically based modeling of dislocation loops in ion implantation processing in silicon
Authors: Castrillo, P.1 Pedro.Castrillo@tel.uva.es, Martin-Bragado, I.1,2, Pinacho, R.1, Jaraiz, M.1, Rubio, J.E.1, Mok, K.R.C.1,3, Miguel-Herrero, F.J.1, Barbolla, J.1
Source: Materials Science & Engineering: B. Dec2005, Vol. 124-125, p404-408. 5p.
Subjects: Ion implantation, Ion bombardment, Ion plating, Heat treatment of metals
Abstract: Abstract: Under certain conditions, particularly for high-dose implants, {311} rod-like defects can evolve into dislocation loops (DLs). In this work, we have developed a model for the transformation of {311}-defects into DLs, with a transformation rate that is controlled by a size-dependent energy barrier. The model has been included and calibrated in an atomistic kinetic Monte Carlo simulator. This simulator includes a description of the size distribution of {311}-defects (required for a size-based model) and of the amorphization and recrystallization (needed to provide reliable information on the number of interstitials in the end-of-range region). Extended defects are implemented according to realistic geometries, giving a direct assessment of the correct capture volume for diffusing defects. The model correctly predicts the formation of DLs during the annealing that follows ion implants, both for amorphizing and non-amorphizing conditions, and provides a realistic description of damage morphology. The possible role of stress on DL formation is also discussed. [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 19120041
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Physically based modeling of dislocation loops in ion implantation processing in silicon
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  Data: <searchLink fieldCode="AR" term="%22Castrillo%2C+P%2E%22">Castrillo, P.</searchLink><relatesTo>1</relatesTo><i> Pedro.Castrillo@tel.uva.es</i><br /><searchLink fieldCode="AR" term="%22Martin-Bragado%2C+I%2E%22">Martin-Bragado, I.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Pinacho%2C+R%2E%22">Pinacho, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jaraiz%2C+M%2E%22">Jaraiz, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Rubio%2C+J%2EE%2E%22">Rubio, J.E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Mok%2C+K%2ER%2EC%2E%22">Mok, K.R.C.</searchLink><relatesTo>1,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Miguel-Herrero%2C+F%2EJ%2E%22">Miguel-Herrero, F.J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Barbolla%2C+J%2E%22">Barbolla, J.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Dec2005, Vol. 124-125, p404-408. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+bombardment%22">Ion bombardment</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+plating%22">Ion plating</searchLink><br /><searchLink fieldCode="DE" term="%22Heat+treatment+of+metals%22">Heat treatment of metals</searchLink>
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  Data: Abstract: Under certain conditions, particularly for high-dose implants, {311} rod-like defects can evolve into dislocation loops (DLs). In this work, we have developed a model for the transformation of {311}-defects into DLs, with a transformation rate that is controlled by a size-dependent energy barrier. The model has been included and calibrated in an atomistic kinetic Monte Carlo simulator. This simulator includes a description of the size distribution of {311}-defects (required for a size-based model) and of the amorphization and recrystallization (needed to provide reliable information on the number of interstitials in the end-of-range region). Extended defects are implemented according to realistic geometries, giving a direct assessment of the correct capture volume for diffusing defects. The model correctly predicts the formation of DLs during the annealing that follows ion implants, both for amorphizing and non-amorphizing conditions, and provides a realistic description of damage morphology. The possible role of stress on DL formation is also discussed. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.mseb.2005.08.119
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      – SubjectFull: Ion plating
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      – SubjectFull: Heat treatment of metals
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      – TitleFull: Physically based modeling of dislocation loops in ion implantation processing in silicon
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              Text: Dec2005
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