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Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.

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Title: Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.
Authors: Guo, Chucai1,2 (AUTHOR), Zhou, Qingwei1,2 (AUTHOR) zqw2100@163.com, Zheng, Biyuan1,2 (AUTHOR), Li, Hansheng1,2 (AUTHOR), Wu, Fan1,2 (AUTHOR), Chen, Dan1,2 (AUTHOR), Luo, Fang1,2 (AUTHOR), Zhu, Zhihong1,2 (AUTHOR)
Source: Nanomaterials (2079-4991). Jan2026, Vol. 16 Issue 2, p146. 10p.
Subjects: Nonvolatile memory, Chemical vapor deposition, Electronic industries, Quantum dots, Chemical synthesis, Computer performance
Abstract: With the rapid advancement in portable electronics, artificial intelligence, and the Internet of Things, there is an escalating demand for high-density, low-voltage non-volatile memory (NVM) technologies. Germanium (Ge) nanocrystals (NCs) have emerged as a promising candidate for NVM applications; however, traditional synthesis methodologies suffer from limitations in achieving precise control over the size and density of these nanocrystals, which exert a significant influence on device performance. This study presents an innovative Ag-catalyzed chemical vapor deposition (CVD) methodology for the synthesis of Ge NCs with precisely controllable size and density on SiO2/Si substrates, tailored for NVM applications. Scanning electron microscopy characterization confirms the successful growth of faceted Ge NCs. Electrical characterization of the fabricated devices reveals that Ge NCs grown at temperatures ranging from 700 to 1000 °C exhibit memory windows spanning from 3.0 to 6.8 V under a ±6 V bias. Notably, the device synthesized at 900 °C demonstrates an exceptional memory window of 7.0 V under a ±8 V bias. Furthermore, the Ge NC-based NVM devices exhibit excellent charge retention characteristics. Specifically, for the device with Ge NCs grown at 700 °C, the time required to retain charge from 100% to 95% of its initial value exceeds 10 years, demonstrating long-term stable charge storage capability. These findings underscore the significant potential of this approach for the development of high-performance NVM technologies. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.
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  Data: <searchLink fieldCode="AR" term="%22Guo%2C+Chucai%22">Guo, Chucai</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhou%2C+Qingwei%22">Zhou, Qingwei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> zqw2100@163.com</i><br /><searchLink fieldCode="AR" term="%22Zheng%2C+Biyuan%22">Zheng, Biyuan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Hansheng%22">Li, Hansheng</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+Fan%22">Wu, Fan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Dan%22">Chen, Dan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Luo%2C+Fang%22">Luo, Fang</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhu%2C+Zhihong%22">Zhu, Zhihong</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Jan2026, Vol. 16 Issue 2, p146. 10p.
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  Data: <searchLink fieldCode="DE" term="%22Nonvolatile+memory%22">Nonvolatile memory</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+industries%22">Electronic industries</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+dots%22">Quantum dots</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+synthesis%22">Chemical synthesis</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+performance%22">Computer performance</searchLink>
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  Label: Abstract
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  Data: With the rapid advancement in portable electronics, artificial intelligence, and the Internet of Things, there is an escalating demand for high-density, low-voltage non-volatile memory (NVM) technologies. Germanium (Ge) nanocrystals (NCs) have emerged as a promising candidate for NVM applications; however, traditional synthesis methodologies suffer from limitations in achieving precise control over the size and density of these nanocrystals, which exert a significant influence on device performance. This study presents an innovative Ag-catalyzed chemical vapor deposition (CVD) methodology for the synthesis of Ge NCs with precisely controllable size and density on SiO2/Si substrates, tailored for NVM applications. Scanning electron microscopy characterization confirms the successful growth of faceted Ge NCs. Electrical characterization of the fabricated devices reveals that Ge NCs grown at temperatures ranging from 700 to 1000 °C exhibit memory windows spanning from 3.0 to 6.8 V under a ±6 V bias. Notably, the device synthesized at 900 °C demonstrates an exceptional memory window of 7.0 V under a ±8 V bias. Furthermore, the Ge NC-based NVM devices exhibit excellent charge retention characteristics. Specifically, for the device with Ge NCs grown at 700 °C, the time required to retain charge from 100% to 95% of its initial value exceeds 10 years, demonstrating long-term stable charge storage capability. These findings underscore the significant potential of this approach for the development of high-performance NVM technologies. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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              Text: Jan2026
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