Bibliographic Details
| Title: |
Nondestructive Metrology of SiO/SiN Multilayer Stack by X‐Ray Reflectometry and Comparison With TEM Results. |
| Authors: |
Liu, Naiming1 (AUTHOR), Wang, Yun‐Yu1 (AUTHOR) yunyuwang@micron.com, Chan, Sook Fun1 (AUTHOR), Wensel, Jesse1 (AUTHOR), Jin, Qiang1 (AUTHOR), Markowitz, Dan1 (AUTHOR) |
| Source: |
Surface & Interface Analysis: SIA. Mar2026, Vol. 58 Issue 3, p176-185. 10p. |
| Subjects: |
X-ray reflectometry, Transmission electron microscopy, Quality control standards, Dielectric films, Silicon nitride films, Nondestructive testing, Thin films analysis |
| Abstract: |
X‐ray reflectometry (XRR) can be used as a nondestructive method for thin film thickness measurement. In this study, a multilayer dielectric SiO/SiN (ONON) film stack for 3D NAND is characterized using both transmission electron microscopy (TEM) and XRR. Direct comparison between these two techniques allows us to validate XRR as a process line monitoring tool for quick feedback of process quality of ONON layer structure. The advantages and limitations of these two techniques for ONON layer characterization are discussed, along with insights into data interpretation that support future implementation of XRR in manufacturing environments. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
