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Nondestructive Metrology of SiO/SiN Multilayer Stack by X‐Ray Reflectometry and Comparison With TEM Results.

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Title: Nondestructive Metrology of SiO/SiN Multilayer Stack by X‐Ray Reflectometry and Comparison With TEM Results.
Authors: Liu, Naiming1 (AUTHOR), Wang, Yun‐Yu1 (AUTHOR) yunyuwang@micron.com, Chan, Sook Fun1 (AUTHOR), Wensel, Jesse1 (AUTHOR), Jin, Qiang1 (AUTHOR), Markowitz, Dan1 (AUTHOR)
Source: Surface & Interface Analysis: SIA. Mar2026, Vol. 58 Issue 3, p176-185. 10p.
Subjects: X-ray reflectometry, Transmission electron microscopy, Quality control standards, Dielectric films, Silicon nitride films, Nondestructive testing, Thin films analysis
Abstract: X‐ray reflectometry (XRR) can be used as a nondestructive method for thin film thickness measurement. In this study, a multilayer dielectric SiO/SiN (ONON) film stack for 3D NAND is characterized using both transmission electron microscopy (TEM) and XRR. Direct comparison between these two techniques allows us to validate XRR as a process line monitoring tool for quick feedback of process quality of ONON layer structure. The advantages and limitations of these two techniques for ONON layer characterization are discussed, along with insights into data interpretation that support future implementation of XRR in manufacturing environments. [ABSTRACT FROM AUTHOR]
Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 191376442
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
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  Data: Nondestructive Metrology of SiO/SiN Multilayer Stack by X‐Ray Reflectometry and Comparison With TEM Results.
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  Data: <searchLink fieldCode="DE" term="%22X-ray+reflectometry%22">X-ray reflectometry</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Quality+control+standards%22">Quality control standards</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+films%22">Dielectric films</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride+films%22">Silicon nitride films</searchLink><br /><searchLink fieldCode="DE" term="%22Nondestructive+testing%22">Nondestructive testing</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films+analysis%22">Thin films analysis</searchLink>
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  Label: Abstract
  Group: Ab
  Data: X‐ray reflectometry (XRR) can be used as a nondestructive method for thin film thickness measurement. In this study, a multilayer dielectric SiO/SiN (ONON) film stack for 3D NAND is characterized using both transmission electron microscopy (TEM) and XRR. Direct comparison between these two techniques allows us to validate XRR as a process line monitoring tool for quick feedback of process quality of ONON layer structure. The advantages and limitations of these two techniques for ONON layer characterization are discussed, along with insights into data interpretation that support future implementation of XRR in manufacturing environments. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1002/sia.70044
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      – Code: eng
        Text: English
    PhysicalDescription:
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        PageCount: 10
        StartPage: 176
    Subjects:
      – SubjectFull: X-ray reflectometry
        Type: general
      – SubjectFull: Transmission electron microscopy
        Type: general
      – SubjectFull: Quality control standards
        Type: general
      – SubjectFull: Dielectric films
        Type: general
      – SubjectFull: Silicon nitride films
        Type: general
      – SubjectFull: Nondestructive testing
        Type: general
      – SubjectFull: Thin films analysis
        Type: general
    Titles:
      – TitleFull: Nondestructive Metrology of SiO/SiN Multilayer Stack by X‐Ray Reflectometry and Comparison With TEM Results.
        Type: main
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          Name:
            NameFull: Liu, Naiming
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            NameFull: Wang, Yun‐Yu
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            NameFull: Chan, Sook Fun
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            NameFull: Wensel, Jesse
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            NameFull: Jin, Qiang
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            NameFull: Markowitz, Dan
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            – D: 01
              M: 03
              Text: Mar2026
              Type: published
              Y: 2026
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              Value: 01422421
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              Value: 58
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              Value: 3
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            – TitleFull: Surface & Interface Analysis: SIA
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