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Investigation of Raman spectral characteristics with variation of RTP process parameters.

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Title: Investigation of Raman spectral characteristics with variation of RTP process parameters.
Authors: Gartia, Anurag1 (AUTHOR), Pradhan, Diana2 (AUTHOR) dianapradhan17@gmail.com, Sahoo, Kiran Kumar1 (AUTHOR), Biswal, Sameer Ranjan1 (AUTHOR), Sabat, Somesh1 (AUTHOR), Parida, Tanmoy2 (AUTHOR), Saxena, Raghvendra S3 (AUTHOR), Kumar, Pawan1 (AUTHOR), Kar, Jyoti Prakash1,4 (AUTHOR)
Source: Bulletin of Materials Science. Mar2026, Vol. 49 Issue 1, p1-10. 10p.
Subjects: Raman spectroscopy, Rapid thermal processing, Infrared detectors, Transition metal chalcogenides, Molybdenum, Crystallinity, X-ray diffraction
Abstract: A great deal of research has been carried out on low-dimensional transition-metal dichalcogenides (TMDs) because of their versatile properties and numerous applications. Among TMDs, molybdenum ditelluride (MoTe2) has garnered significant attention as a 'beyond graphene' material because of its extraordinary structural and physical characteristics. To characterize the microstructural properties of low-dimensional TMDs, Raman spectroscopy can be adopted as a non-destructive characterization technique because of its various advantages. In this work, the impact of post-growth temperature and growth parameters of MoTe2 was studied using Raman spectroscopy. Variations in Raman peak intensity were correlated with the formation and dissociation of Mo–Te bonds. With increasing growth temperature and duration, a transition in peak intensities was observed, typically characterized by a decrease in Te-related peaks and a relative increase in MoTe2 peaks. As the growth duration increased, the Te Raman-active modes vanished and the MoTe2 Raman-active modes appeared. The absence of MoTe2 Raman peaks at low temperatures was attributed to insufficient thermal energy for crystallization. Films annealed at 625 °C for 1 h under the specified conditions did not exhibit tellurium peaks, indicating effective conversion to MoTe2; however, this outcome may vary with different annealing parameters. Longer annealing durations enhanced the intensity of the E12g and B12g Raman peaks, indicating improved crystallinity. As the number of layers increased with longer sputtering times, the E12g and B12g peaks shifted to lower wavenumbers, accompanied by a reduction in full width at half maximum (FWHM). Conversely, a decrease in MoTe2 layers caused these peaks to shift to higher wavenumbers and the FWHM to broaden. X-ray diffraction (XRD) analysis revealed peaks at approximately 12.8°, 25.5°, 39.2°, and 53.2°, corresponding to the (002), (004), (006), and (008) planes, respectively. Atomic force microscopy (AFM) studies confirmed homogeneous film deposition, characterized by distinct hills and valleys on the surface. The current–voltage (I–V) study demonstrated the rectifying nature of the MoTe2/Si heterojunction, with a rectification ratio of approximately 102. Further, the I–V and current–time (I–t) characteristics were evaluated under different infrared (IR) illumination conditions. The maximum responsivity and detectivity were found to be 1.59 A W−1 and 2.2 × 109 jones, respectively, at an IR wavelength of 1060 nm. Additionally, the rise and fall times of the device were measured to be 0.98 s and 1.11 s, respectively, demonstrating its potential for IR detection applications. Hence, this extensive study of Raman-active modes in MoTe2 provides valuable insight into the fabrication of high-quality low-dimensional TMD-based high-performance devices. [ABSTRACT FROM AUTHOR]
Copyright of Bulletin of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Investigation of Raman spectral characteristics with variation of RTP process parameters.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Gartia%2C+Anurag%22">Gartia, Anurag</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pradhan%2C+Diana%22">Pradhan, Diana</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> dianapradhan17@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Sahoo%2C+Kiran+Kumar%22">Sahoo, Kiran Kumar</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Biswal%2C+Sameer+Ranjan%22">Biswal, Sameer Ranjan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sabat%2C+Somesh%22">Sabat, Somesh</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Parida%2C+Tanmoy%22">Parida, Tanmoy</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Saxena%2C+Raghvendra+S%22">Saxena, Raghvendra S</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kumar%2C+Pawan%22">Kumar, Pawan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kar%2C+Jyoti+Prakash%22">Kar, Jyoti Prakash</searchLink><relatesTo>1,4</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Bulletin+of+Materials+Science%22">Bulletin of Materials Science</searchLink>. Mar2026, Vol. 49 Issue 1, p1-10. 10p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Rapid+thermal+processing%22">Rapid thermal processing</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+detectors%22">Infrared detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+metal+chalcogenides%22">Transition metal chalcogenides</searchLink><br /><searchLink fieldCode="DE" term="%22Molybdenum%22">Molybdenum</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallinity%22">Crystallinity</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+diffraction%22">X-ray diffraction</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A great deal of research has been carried out on low-dimensional transition-metal dichalcogenides (TMDs) because of their versatile properties and numerous applications. Among TMDs, molybdenum ditelluride (MoTe2) has garnered significant attention as a 'beyond graphene' material because of its extraordinary structural and physical characteristics. To characterize the microstructural properties of low-dimensional TMDs, Raman spectroscopy can be adopted as a non-destructive characterization technique because of its various advantages. In this work, the impact of post-growth temperature and growth parameters of MoTe2 was studied using Raman spectroscopy. Variations in Raman peak intensity were correlated with the formation and dissociation of Mo–Te bonds. With increasing growth temperature and duration, a transition in peak intensities was observed, typically characterized by a decrease in Te-related peaks and a relative increase in MoTe2 peaks. As the growth duration increased, the Te Raman-active modes vanished and the MoTe2 Raman-active modes appeared. The absence of MoTe2 Raman peaks at low temperatures was attributed to insufficient thermal energy for crystallization. Films annealed at 625 °C for 1 h under the specified conditions did not exhibit tellurium peaks, indicating effective conversion to MoTe2; however, this outcome may vary with different annealing parameters. Longer annealing durations enhanced the intensity of the E12g and B12g Raman peaks, indicating improved crystallinity. As the number of layers increased with longer sputtering times, the E12g and B12g peaks shifted to lower wavenumbers, accompanied by a reduction in full width at half maximum (FWHM). Conversely, a decrease in MoTe2 layers caused these peaks to shift to higher wavenumbers and the FWHM to broaden. X-ray diffraction (XRD) analysis revealed peaks at approximately 12.8°, 25.5°, 39.2°, and 53.2°, corresponding to the (002), (004), (006), and (008) planes, respectively. Atomic force microscopy (AFM) studies confirmed homogeneous film deposition, characterized by distinct hills and valleys on the surface. The current–voltage (I–V) study demonstrated the rectifying nature of the MoTe2/Si heterojunction, with a rectification ratio of approximately 102. Further, the I–V and current–time (I–t) characteristics were evaluated under different infrared (IR) illumination conditions. The maximum responsivity and detectivity were found to be 1.59 A W−1 and 2.2 × 109 jones, respectively, at an IR wavelength of 1060 nm. Additionally, the rise and fall times of the device were measured to be 0.98 s and 1.11 s, respectively, demonstrating its potential for IR detection applications. Hence, this extensive study of Raman-active modes in MoTe2 provides valuable insight into the fabrication of high-quality low-dimensional TMD-based high-performance devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Bulletin of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s12034-026-03543-5
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 1
    Subjects:
      – SubjectFull: Raman spectroscopy
        Type: general
      – SubjectFull: Rapid thermal processing
        Type: general
      – SubjectFull: Infrared detectors
        Type: general
      – SubjectFull: Transition metal chalcogenides
        Type: general
      – SubjectFull: Molybdenum
        Type: general
      – SubjectFull: Crystallinity
        Type: general
      – SubjectFull: X-ray diffraction
        Type: general
    Titles:
      – TitleFull: Investigation of Raman spectral characteristics with variation of RTP process parameters.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Gartia, Anurag
      – PersonEntity:
          Name:
            NameFull: Pradhan, Diana
      – PersonEntity:
          Name:
            NameFull: Sahoo, Kiran Kumar
      – PersonEntity:
          Name:
            NameFull: Biswal, Sameer Ranjan
      – PersonEntity:
          Name:
            NameFull: Sabat, Somesh
      – PersonEntity:
          Name:
            NameFull: Parida, Tanmoy
      – PersonEntity:
          Name:
            NameFull: Saxena, Raghvendra S
      – PersonEntity:
          Name:
            NameFull: Kumar, Pawan
      – PersonEntity:
          Name:
            NameFull: Kar, Jyoti Prakash
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 02504707
          Numbering:
            – Type: volume
              Value: 49
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Bulletin of Materials Science
              Type: main
ResultId 1