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A Method to Determine the Habit Plane of a Dislocation Loop.

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Title: A Method to Determine the Habit Plane of a Dislocation Loop.
Authors: Du, Yufeng1,2 (AUTHOR), Cui, Lijuan2,3 (AUTHOR) lijuan.cui@scu.edu.cn, Hu, Xunxiang3 (AUTHOR), Wan, Farong1,2 (AUTHOR)
Source: Materials (1996-1944). Feb2026, Vol. 19 Issue 3, p497. 12p.
Subjects: Dislocation loops, Transmission electron microscopes, Irradiation, Mechanical behavior of materials, Crystal orientation
Abstract: The nature of dislocation loops significantly influences their evolutionary behavior and, consequently, affects the material properties, particularly under irradiation conditions. Determining the habit plane of a dislocation loop is the key point to examining its nature using the inside–outside method. In the present study, we introduce a novel technique for determining the habit planes of dislocation loops in the transmission electron microscope (TEM). The traditional inside–outside technique requires an edge-on perspective of the dislocation loop for analysis of the habit plane. In contrast, our innovative method for the precise determination of the habit plane delves into the geometric correlations between the dislocation loop and its projections under different crystal zone axes in TEM without being bound by the restrictive requirement of an edge-on view. It also simplifies the procedure of the inside–outside method. Furthermore, we have discussed the advantages and limitations of various methodologies employed to examine the nature of dislocation loops, as well as the techniques for determining their habit planes. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 191586724
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  Data: A Method to Determine the Habit Plane of a Dislocation Loop.
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Feb2026, Vol. 19 Issue 3, p497. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Dislocation+loops%22">Dislocation loops</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopes%22">Transmission electron microscopes</searchLink><br /><searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink><br /><searchLink fieldCode="DE" term="%22Mechanical+behavior+of+materials%22">Mechanical behavior of materials</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+orientation%22">Crystal orientation</searchLink>
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  Label: Abstract
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  Data: The nature of dislocation loops significantly influences their evolutionary behavior and, consequently, affects the material properties, particularly under irradiation conditions. Determining the habit plane of a dislocation loop is the key point to examining its nature using the inside–outside method. In the present study, we introduce a novel technique for determining the habit planes of dislocation loops in the transmission electron microscope (TEM). The traditional inside–outside technique requires an edge-on perspective of the dislocation loop for analysis of the habit plane. In contrast, our innovative method for the precise determination of the habit plane delves into the geometric correlations between the dislocation loop and its projections under different crystal zone axes in TEM without being bound by the restrictive requirement of an edge-on view. It also simplifies the procedure of the inside–outside method. Furthermore, we have discussed the advantages and limitations of various methodologies employed to examine the nature of dislocation loops, as well as the techniques for determining their habit planes. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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    Identifiers:
      – Type: doi
        Value: 10.3390/ma19030497
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      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 12
        StartPage: 497
    Subjects:
      – SubjectFull: Dislocation loops
        Type: general
      – SubjectFull: Transmission electron microscopes
        Type: general
      – SubjectFull: Irradiation
        Type: general
      – SubjectFull: Mechanical behavior of materials
        Type: general
      – SubjectFull: Crystal orientation
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      – TitleFull: A Method to Determine the Habit Plane of a Dislocation Loop.
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            NameFull: Du, Yufeng
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            NameFull: Cui, Lijuan
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            NameFull: Hu, Xunxiang
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            NameFull: Wan, Farong
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            – D: 01
              M: 02
              Text: Feb2026
              Type: published
              Y: 2026
          Identifiers:
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              Value: 19
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              Value: 3
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            – TitleFull: Materials (1996-1944)
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