Molecular Dynamics Study on the Mechanical Properties of Bilayer Silicon Carbide.
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| Title: | Molecular Dynamics Study on the Mechanical Properties of Bilayer Silicon Carbide. |
|---|---|
| Authors: | Peng, Qing1,2,3 (AUTHOR) qinlang25@mails.ucas.ac.cn, Huang, Anyi2,4,5 (AUTHOR), Qin, Lang2,3,5 (AUTHOR), Shu, Chaoxi3,4 (AUTHOR), Li, Jiale2,5,6,7 (AUTHOR), Li, Hongyang2,6,7 (AUTHOR), Zheng, Lihang2,7 (AUTHOR), Cai, Xintian8,9 (AUTHOR) caixintian@whu.edu.cn, Chen, Xiao-Jia1,9 (AUTHOR) xjchen@hit.edu.cn |
| Source: | Nanomaterials (2079-4991). Feb2026, Vol. 16 Issue 3, p207. 17p. |
| Subjects: | Molecular dynamics, Mechanical behavior of materials, Strain rate, Point defects, Tensile strength, Silicon carbide films, Temperature effect, Crack propagation |
| Abstract: | The advent of bilayer silicon carbide as a critical two-dimensional material has opened up a range of potential applications in various fields. The field of nanoelectronics and nanomechanical systems is distinguished by its exceptional mechanical robustness, yet the combined effects of environmental and structural factors on its mechanical integrity remain poorly understood. Molecular dynamics simulations are used in this study to systematically examine the tensile response of bilayer SiC across a range of strain rates, temperatures, vacancy concentrations, and pre-existing crack lengths. Results indicate that mechanical properties converge at a system size of 18,144 atoms, ensuring computational efficiency. Increasing strain rate enhances strength and toughness by suppressing atomic relaxation, while elevated temperature induces thermal softening, reducing failure strain and strength by up to 50% at 900 K. Vacancy defects drastically degrade performance, with 3% concentration causing over 70% toughness loss, and crack propagation follows Griffith-type brittle fracture, where the zigzag direction exhibits superior resistance compared to the armchair orientation. These findings highlight the sensitivity of bilayer SiC to defects and environmental conditions, providing critical insights for designing reliable SiC-based nanodevices. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 191609615 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Molecular Dynamics Study on the Mechanical Properties of Bilayer Silicon Carbide. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Peng%2C+Qing%22">Peng, Qing</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> qinlang25@mails.ucas.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Huang%2C+Anyi%22">Huang, Anyi</searchLink><relatesTo>2,4,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Qin%2C+Lang%22">Qin, Lang</searchLink><relatesTo>2,3,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shu%2C+Chaoxi%22">Shu, Chaoxi</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Jiale%22">Li, Jiale</searchLink><relatesTo>2,5,6,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Hongyang%22">Li, Hongyang</searchLink><relatesTo>2,6,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zheng%2C+Lihang%22">Zheng, Lihang</searchLink><relatesTo>2,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cai%2C+Xintian%22">Cai, Xintian</searchLink><relatesTo>8,9</relatesTo> (AUTHOR)<i> caixintian@whu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Chen%2C+Xiao-Jia%22">Chen, Xiao-Jia</searchLink><relatesTo>1,9</relatesTo> (AUTHOR)<i> xjchen@hit.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Feb2026, Vol. 16 Issue 3, p207. 17p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Molecular+dynamics%22">Molecular dynamics</searchLink><br /><searchLink fieldCode="DE" term="%22Mechanical+behavior+of+materials%22">Mechanical behavior of materials</searchLink><br /><searchLink fieldCode="DE" term="%22Strain+rate%22">Strain rate</searchLink><br /><searchLink fieldCode="DE" term="%22Point+defects%22">Point defects</searchLink><br /><searchLink fieldCode="DE" term="%22Tensile+strength%22">Tensile strength</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide+films%22">Silicon carbide films</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink><br /><searchLink fieldCode="DE" term="%22Crack+propagation%22">Crack propagation</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The advent of bilayer silicon carbide as a critical two-dimensional material has opened up a range of potential applications in various fields. The field of nanoelectronics and nanomechanical systems is distinguished by its exceptional mechanical robustness, yet the combined effects of environmental and structural factors on its mechanical integrity remain poorly understood. Molecular dynamics simulations are used in this study to systematically examine the tensile response of bilayer SiC across a range of strain rates, temperatures, vacancy concentrations, and pre-existing crack lengths. Results indicate that mechanical properties converge at a system size of 18,144 atoms, ensuring computational efficiency. Increasing strain rate enhances strength and toughness by suppressing atomic relaxation, while elevated temperature induces thermal softening, reducing failure strain and strength by up to 50% at 900 K. Vacancy defects drastically degrade performance, with 3% concentration causing over 70% toughness loss, and crack propagation follows Griffith-type brittle fracture, where the zigzag direction exhibits superior resistance compared to the armchair orientation. These findings highlight the sensitivity of bilayer SiC to defects and environmental conditions, providing critical insights for designing reliable SiC-based nanodevices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano16030207 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 17 StartPage: 207 Subjects: – SubjectFull: Molecular dynamics Type: general – SubjectFull: Mechanical behavior of materials Type: general – SubjectFull: Strain rate Type: general – SubjectFull: Point defects Type: general – SubjectFull: Tensile strength Type: general – SubjectFull: Silicon carbide films Type: general – SubjectFull: Temperature effect Type: general – SubjectFull: Crack propagation Type: general Titles: – TitleFull: Molecular Dynamics Study on the Mechanical Properties of Bilayer Silicon Carbide. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Peng, Qing – PersonEntity: Name: NameFull: Huang, Anyi – PersonEntity: Name: NameFull: Qin, Lang – PersonEntity: Name: NameFull: Shu, Chaoxi – PersonEntity: Name: NameFull: Li, Jiale – PersonEntity: Name: NameFull: Li, Hongyang – PersonEntity: Name: NameFull: Zheng, Lihang – PersonEntity: Name: NameFull: Cai, Xintian – PersonEntity: Name: NameFull: Chen, Xiao-Jia IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 16 – Type: issue Value: 3 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
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