Negative cluster emission in sputtering of Si1−x Ge x alloys: A full spectrum approach
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| Title: | Negative cluster emission in sputtering of Si |
|---|---|
| Authors: | Perego, M. hvwdp@yahoo.it, Ferrari, S.1, Fanciulli, M.1 |
| Source: | Surface Science. Dec2005, Vol. 599 Issue 1-3, p141-149. 9p. |
| Subjects: | Germanium, Alloys, Metallic composites, Silicon |
| Abstract: | Abstract: The emission of negative cluster ions in sputtering of silicon, germanium and silicon–germanium alloys was investigated by time of flight secondary ion mass spectrometry using Cs+ ions at 1keV for sputtering and Ga+ ions at 25keV for analysis. Various homonuclear and heteronuclear (; Si n Ge−) anionic cluster species were studied and their abundance distributions as a function of cluster size n were determined in steady state conditions. Surprisingly with n >2 are less sensitive to Ge concentration than Si−. This implies that the variation of the secondary ion signals as a function of Ge concentration cannot be explained in terms of simple statistical considerations. Also clusters show a peculiar behavior. Very strong matrix effects were observed for Ge− with decreasing intensity at high germanium concentrations. An opposite behavior is followed by the other clusters whose intensities are proportional to the Ge content. Moreover at high germanium concentrations, the and anions exhibit signals higher than Ge−. Finally, we observed that the fractions of silicon and germanium atoms in the ionized fraction of the sputtered flux are equivalent to their elemental fractions in the alloy. This behavior suggests the possibility to establish a protocol for the quantification of germanium concentration that can be applied to any Si1−x Ge x alloy avoiding matrix effects. [Copyright &y& Elsevier] |
| Copyright of Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 19183383 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Negative cluster emission in sputtering of Si<subscript>1−x </subscript>Ge<subscript> x </subscript> alloys: A full spectrum approach – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Perego%2C+M%2E%22">Perego, M.</searchLink><i> hvwdp@yahoo.it</i><br /><searchLink fieldCode="AR" term="%22Ferrari%2C+S%2E%22">Ferrari, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fanciulli%2C+M%2E%22">Fanciulli, M.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Surface+Science%22">Surface Science</searchLink>. Dec2005, Vol. 599 Issue 1-3, p141-149. 9p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink><br /><searchLink fieldCode="DE" term="%22Alloys%22">Alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Metallic+composites%22">Metallic composites</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: The emission of negative cluster ions in sputtering of silicon, germanium and silicon–germanium alloys was investigated by time of flight secondary ion mass spectrometry using Cs+ ions at 1keV for sputtering and Ga+ ions at 25keV for analysis. Various homonuclear and heteronuclear (; Si n Ge−) anionic cluster species were studied and their abundance distributions as a function of cluster size n were determined in steady state conditions. Surprisingly with n >2 are less sensitive to Ge concentration than Si−. This implies that the variation of the secondary ion signals as a function of Ge concentration cannot be explained in terms of simple statistical considerations. Also clusters show a peculiar behavior. Very strong matrix effects were observed for Ge− with decreasing intensity at high germanium concentrations. An opposite behavior is followed by the other clusters whose intensities are proportional to the Ge content. Moreover at high germanium concentrations, the and anions exhibit signals higher than Ge−. Finally, we observed that the fractions of silicon and germanium atoms in the ionized fraction of the sputtered flux are equivalent to their elemental fractions in the alloy. This behavior suggests the possibility to establish a protocol for the quantification of germanium concentration that can be applied to any Si1−x Ge x alloy avoiding matrix effects. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.susc.2005.10.002 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 141 Subjects: – SubjectFull: Germanium Type: general – SubjectFull: Alloys Type: general – SubjectFull: Metallic composites Type: general – SubjectFull: Silicon Type: general Titles: – TitleFull: Negative cluster emission in sputtering of Si1−x Ge x alloys: A full spectrum approach Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Perego, M. – PersonEntity: Name: NameFull: Ferrari, S. – PersonEntity: Name: NameFull: Fanciulli, M. IsPartOfRelationships: – BibEntity: Dates: – D: 30 M: 12 Text: Dec2005 Type: published Y: 2005 Identifiers: – Type: issn-print Value: 00396028 Numbering: – Type: volume Value: 599 – Type: issue Value: 1-3 Titles: – TitleFull: Surface Science Type: main |
| ResultId | 1 |
