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High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation.

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Title: High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation.
Authors: Mancuso, Alfio Samuele1,2 (AUTHOR) saverio.deluca@cnr.it, De Luca, Saverio2 (AUTHOR), Sangregorio, Enrico2,3 (AUTHOR), Muoio, Annamaria2,4 (AUTHOR), Gallo, Erik1,3 (AUTHOR), Vanellone, Silvia2,3 (AUTHOR), Quadrivi, Eleonora3 (AUTHOR), Trotta, Antonio3,4 (AUTHOR), Calcagno, Lucia4 (AUTHOR), Tudisco, Salvo4 (AUTHOR), La Via, Francesco2 (AUTHOR) francesco.lavia@cnr.it
Source: Materials (1996-1944). Feb2026, Vol. 19 Issue 4, p699. 16p.
Subjects: Ion implantation, Epitaxy, Electric properties, Semiconductor diodes, Semiconductor manufacturing, Neutron counters, High voltages, Thermal stability
Abstract: This study investigates the electrical performance of two 4H-SiC p+-i-n− diodes, based on lightly doped epitaxial layers, representative of high-voltage and neutron-detector structures. Each design was implemented in multiple nominally identical devices and characterized over the temperature range 298–623 K, with particular attention to the influence of p+ layer fabrication, n-type epitaxial layer thickness, and doping concentration. One diode features an ion-implanted p+ layer on a 250 µm thick n-type epitaxial layer, while the other employs an epitaxially grown p+ layer on a 100 µm thick n-type epitaxial layer. A comparison of reverse-bias Current–Voltage (I–V) and Capacitance–Voltage (C–V) characteristics indicates that, although both designs exhibit high-quality epitaxial 4H-SiC material, devices with an implanted p+ anode tend to show a more pronounced temperature-dependence and degradation of selected electrical parameters in reverse bias than those with an epitaxial p+ anode, while forward I–V in the range 298–623 K remains broadly similar for both designs. These observations suggest that anode fabrication and epitaxial design may jointly influence thermal stability, recombination mechanisms, and overall electrical performance, offering guidance for the optimization of 4H-SiC-based power and neutron-detector devices for high-temperature and harsh environments. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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An: 191972840
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  Data: High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation.
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  Data: <searchLink fieldCode="AR" term="%22Mancuso%2C+Alfio+Samuele%22">Mancuso, Alfio Samuele</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> saverio.deluca@cnr.it</i><br /><searchLink fieldCode="AR" term="%22De+Luca%2C+Saverio%22">De Luca, Saverio</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sangregorio%2C+Enrico%22">Sangregorio, Enrico</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Muoio%2C+Annamaria%22">Muoio, Annamaria</searchLink><relatesTo>2,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gallo%2C+Erik%22">Gallo, Erik</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Vanellone%2C+Silvia%22">Vanellone, Silvia</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Quadrivi%2C+Eleonora%22">Quadrivi, Eleonora</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Trotta%2C+Antonio%22">Trotta, Antonio</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Calcagno%2C+Lucia%22">Calcagno, Lucia</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tudisco%2C+Salvo%22">Tudisco, Salvo</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22La+Via%2C+Francesco%22">La Via, Francesco</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> francesco.lavia@cnr.it</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Feb2026, Vol. 19 Issue 4, p699. 16p.
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  Data: <searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties%22">Electric properties</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+diodes%22">Semiconductor diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+manufacturing%22">Semiconductor manufacturing</searchLink><br /><searchLink fieldCode="DE" term="%22Neutron+counters%22">Neutron counters</searchLink><br /><searchLink fieldCode="DE" term="%22High+voltages%22">High voltages</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+stability%22">Thermal stability</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This study investigates the electrical performance of two 4H-SiC p+-i-n− diodes, based on lightly doped epitaxial layers, representative of high-voltage and neutron-detector structures. Each design was implemented in multiple nominally identical devices and characterized over the temperature range 298–623 K, with particular attention to the influence of p+ layer fabrication, n-type epitaxial layer thickness, and doping concentration. One diode features an ion-implanted p+ layer on a 250 µm thick n-type epitaxial layer, while the other employs an epitaxially grown p+ layer on a 100 µm thick n-type epitaxial layer. A comparison of reverse-bias Current–Voltage (I–V) and Capacitance–Voltage (C–V) characteristics indicates that, although both designs exhibit high-quality epitaxial 4H-SiC material, devices with an implanted p+ anode tend to show a more pronounced temperature-dependence and degradation of selected electrical parameters in reverse bias than those with an epitaxial p+ anode, while forward I–V in the range 298–623 K remains broadly similar for both designs. These observations suggest that anode fabrication and epitaxial design may jointly influence thermal stability, recombination mechanisms, and overall electrical performance, offering guidance for the optimization of 4H-SiC-based power and neutron-detector devices for high-temperature and harsh environments. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/ma19040699
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      – Code: eng
        Text: English
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        PageCount: 16
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      – SubjectFull: Ion implantation
        Type: general
      – SubjectFull: Epitaxy
        Type: general
      – SubjectFull: Electric properties
        Type: general
      – SubjectFull: Semiconductor diodes
        Type: general
      – SubjectFull: Semiconductor manufacturing
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      – SubjectFull: Neutron counters
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      – SubjectFull: High voltages
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      – SubjectFull: Thermal stability
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      – TitleFull: High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation.
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              Text: Feb2026
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              Y: 2026
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