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Impact of Carbon Diffusion Induced Stress on the Properties of Diamond/GaN Heterojunctions.

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Title: Impact of Carbon Diffusion Induced Stress on the Properties of Diamond/GaN Heterojunctions.
Authors: Sun, Haolun1 (AUTHOR), Wu, Mei1,2 (AUTHOR) wumei@xidian.edu.cn, Xu, Peng1,2 (AUTHOR), Yuan, Chao2 (AUTHOR), Yang, Ling1 (AUTHOR), Lu, Hao1 (AUTHOR), Hou, Bin1 (AUTHOR), Zhang, Meng1 (AUTHOR), Ma, Xiaohua1 (AUTHOR), Hao, Yue1 (AUTHOR)
Source: Nanomaterials (2079-4991). Feb2026, Vol. 16 Issue 4, p241. 9p.
Subjects: Strains & stresses (Mechanics), Heterojunctions, Energy dissipation, Diffusion kinetics, Piezoelectricity, Interfacial resistance, Transmission electron microscopy, Molecular dynamics
Abstract: Integrating diamond with GaN provides an effective pathway to mitigate self-heating. However, the thermal boundary resistance (TBR) remains a persistent bottleneck for further heat dissipation. While carbon (C) diffusion into the SiNx interlayer is known to reduce TBR, the associated stress evolution and its impact on device performance remain underexplored. In this work, the synergistic regulation of heat transport and electrical performance induced by C diffusion was systematically investigated. Transmission electron microscopy (TEM) was employed to characterize the interfacial microstructure and the influence of C diffusion on the interface. To further assess the resulting impact on heat dissipation, transient thermoreflectance was utilized to precisely quantify the thermal transport within the heterostructures. Classical molecular dynamics (MD) simulations were then performed to analyze the underlying physical mechanisms, revealing that intensifying C diffusion increases the phonon density of states overlap and effectively reduces the TBR. Furthermore, the intrinsic stress was quantified through geometric phase analysis (GPA) based on TEM images, demonstrating that the stress induced during the diffusion process propagates to the AlGaN/GaN heterostructure. Crucially, this stress modulation enhances the piezoelectric polarization by approximately 32%, resulting in a 5% increase in the two-dimensional electron gas (2DEG) sheet density. These findings provide a comprehensive strategy for optimizing the thermal management and mechanical reliability of high-power GaN devices. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Impact of Carbon Diffusion Induced Stress on the Properties of Diamond/GaN Heterojunctions.
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  Data: <searchLink fieldCode="AR" term="%22Sun%2C+Haolun%22">Sun, Haolun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+Mei%22">Wu, Mei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> wumei@xidian.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Xu%2C+Peng%22">Xu, Peng</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yuan%2C+Chao%22">Yuan, Chao</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Ling%22">Yang, Ling</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lu%2C+Hao%22">Lu, Hao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hou%2C+Bin%22">Hou, Bin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Meng%22">Zhang, Meng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ma%2C+Xiaohua%22">Ma, Xiaohua</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hao%2C+Yue%22">Hao, Yue</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Feb2026, Vol. 16 Issue 4, p241. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Strains+%26+stresses+%28Mechanics%29%22">Strains & stresses (Mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+dissipation%22">Energy dissipation</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion+kinetics%22">Diffusion kinetics</searchLink><br /><searchLink fieldCode="DE" term="%22Piezoelectricity%22">Piezoelectricity</searchLink><br /><searchLink fieldCode="DE" term="%22Interfacial+resistance%22">Interfacial resistance</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+dynamics%22">Molecular dynamics</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Integrating diamond with GaN provides an effective pathway to mitigate self-heating. However, the thermal boundary resistance (TBR) remains a persistent bottleneck for further heat dissipation. While carbon (C) diffusion into the SiNx interlayer is known to reduce TBR, the associated stress evolution and its impact on device performance remain underexplored. In this work, the synergistic regulation of heat transport and electrical performance induced by C diffusion was systematically investigated. Transmission electron microscopy (TEM) was employed to characterize the interfacial microstructure and the influence of C diffusion on the interface. To further assess the resulting impact on heat dissipation, transient thermoreflectance was utilized to precisely quantify the thermal transport within the heterostructures. Classical molecular dynamics (MD) simulations were then performed to analyze the underlying physical mechanisms, revealing that intensifying C diffusion increases the phonon density of states overlap and effectively reduces the TBR. Furthermore, the intrinsic stress was quantified through geometric phase analysis (GPA) based on TEM images, demonstrating that the stress induced during the diffusion process propagates to the AlGaN/GaN heterostructure. Crucially, this stress modulation enhances the piezoelectric polarization by approximately 32%, resulting in a 5% increase in the two-dimensional electron gas (2DEG) sheet density. These findings provide a comprehensive strategy for optimizing the thermal management and mechanical reliability of high-power GaN devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.3390/nano16040241
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      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 241
    Subjects:
      – SubjectFull: Strains & stresses (Mechanics)
        Type: general
      – SubjectFull: Heterojunctions
        Type: general
      – SubjectFull: Energy dissipation
        Type: general
      – SubjectFull: Diffusion kinetics
        Type: general
      – SubjectFull: Piezoelectricity
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      – SubjectFull: Interfacial resistance
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      – SubjectFull: Transmission electron microscopy
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      – SubjectFull: Molecular dynamics
        Type: general
    Titles:
      – TitleFull: Impact of Carbon Diffusion Induced Stress on the Properties of Diamond/GaN Heterojunctions.
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              Text: Feb2026
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