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Thermal-cyclic etching of SiGe with selective removal over Ge using fluorocarbon-based plasma and infrared heating.

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Title: Thermal-cyclic etching of SiGe with selective removal over Ge using fluorocarbon-based plasma and infrared heating.
Authors: Shinoda, Kazunori1 (AUTHOR) kazunori.shinoda.wp@hitachi-hightech.com, Nguyen, Thi-Thuy-Nga2 (AUTHOR), Yokogawa, Kenetsu1 (AUTHOR), Izawa, Masaru3 (AUTHOR), Ishikawa, Kenji2 (AUTHOR), Hori, Masaru2 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Mar2026, Vol. 44 Issue 2, p1-13. 13p.
Subjects: Plasma etching, Infrared heating, X-ray photoelectron spectroscopy, Surfaces (Technology), Germanium films
Abstract: Self-limiting thermal-cyclic etching of SiGe films demonstrating etch selectivity over Ge was achieved using alternating exposure to radicals generated in CHF3/N2/O2 plasma and infrared heating. Si, Ge, and SiGe with Ge contents from 25% to 70% were used as sample materials. In situ x-ray photoelectron spectroscopy revealed a N 1s peak attributed to N-H bonds after radical exposure to SiGe and Ge. The peak disappeared upon heating to 100 °C, indicating removal of the surface-modified layer. Cyclic etching of SiGe and Ge using a dry chemical removal tool shows thickness reduction with increasing cycles. The etch per cycle (EPC) for SiGe ranged from 3 to 7 nm, while that for Ge was 1–2 nm. Si was continuously etched. Saturation behavior with respect to radical exposure time was observed for both SiGe and Ge. Enhanced EPC of SiGe over Ge is attributed to the selective formation of the modified layer on SiGe surfaces. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 192180286
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
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  Data: Thermal-cyclic etching of SiGe with selective removal over Ge using fluorocarbon-based plasma and infrared heating.
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  Data: <searchLink fieldCode="AR" term="%22Shinoda%2C+Kazunori%22">Shinoda, Kazunori</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> kazunori.shinoda.wp@hitachi-hightech.com</i><br /><searchLink fieldCode="AR" term="%22Nguyen%2C+Thi-Thuy-Nga%22">Nguyen, Thi-Thuy-Nga</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yokogawa%2C+Kenetsu%22">Yokogawa, Kenetsu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Izawa%2C+Masaru%22">Izawa, Masaru</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ishikawa%2C+Kenji%22">Ishikawa, Kenji</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hori%2C+Masaru%22">Hori, Masaru</searchLink><relatesTo>2</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Mar2026, Vol. 44 Issue 2, p1-13. 13p.
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  Data: <searchLink fieldCode="DE" term="%22Plasma+etching%22">Plasma etching</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+heating%22">Infrared heating</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Surfaces+%28Technology%29%22">Surfaces (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium+films%22">Germanium films</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Self-limiting thermal-cyclic etching of SiGe films demonstrating etch selectivity over Ge was achieved using alternating exposure to radicals generated in CHF3/N2/O2 plasma and infrared heating. Si, Ge, and SiGe with Ge contents from 25% to 70% were used as sample materials. In situ x-ray photoelectron spectroscopy revealed a N 1s peak attributed to N-H bonds after radical exposure to SiGe and Ge. The peak disappeared upon heating to 100 °C, indicating removal of the surface-modified layer. Cyclic etching of SiGe and Ge using a dry chemical removal tool shows thickness reduction with increasing cycles. The etch per cycle (EPC) for SiGe ranged from 3 to 7 nm, while that for Ge was 1–2 nm. Si was continuously etched. Saturation behavior with respect to radical exposure time was observed for both SiGe and Ge. Enhanced EPC of SiGe over Ge is attributed to the selective formation of the modified layer on SiGe surfaces. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1116/6.0005128
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 13
        StartPage: 1
    Subjects:
      – SubjectFull: Plasma etching
        Type: general
      – SubjectFull: Infrared heating
        Type: general
      – SubjectFull: X-ray photoelectron spectroscopy
        Type: general
      – SubjectFull: Surfaces (Technology)
        Type: general
      – SubjectFull: Germanium films
        Type: general
    Titles:
      – TitleFull: Thermal-cyclic etching of SiGe with selective removal over Ge using fluorocarbon-based plasma and infrared heating.
        Type: main
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          Name:
            NameFull: Shinoda, Kazunori
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            NameFull: Nguyen, Thi-Thuy-Nga
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            NameFull: Yokogawa, Kenetsu
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            NameFull: Izawa, Masaru
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            NameFull: Ishikawa, Kenji
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            NameFull: Hori, Masaru
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            – D: 01
              M: 03
              Text: Mar2026
              Type: published
              Y: 2026
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              Value: 07342101
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              Value: 44
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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