APA (7th ed.) Citation

Khomenkov, D. V., Ponomaryov, S. S., Portier, X., Melnichuk, L. Y., Khomenkova, L. Y., Gourbilleau, F., & Melnichuk, O. V. (2025). Tailoring structural and optical properties of Si-doped HfO2 thin films via target composition and plasma environment. Semiconductor Physics, Quantum Electronics & Optoelectronics, 28(4), 441. https://doi.org/10.15407/spqeo28.04.441

Chicago Style (17th ed.) Citation

Khomenkov, D. V., S. S. Ponomaryov, X. Portier, L. Yu Melnichuk, L. Yu Khomenkova, F. Gourbilleau, and O. V. Melnichuk. "Tailoring Structural and Optical Properties of Si-doped HfO2 Thin Films via Target Composition and Plasma Environment." Semiconductor Physics, Quantum Electronics & Optoelectronics 28, no. 4 (2025): 441. https://doi.org/10.15407/spqeo28.04.441.

MLA (9th ed.) Citation

Khomenkov, D. V., et al. "Tailoring Structural and Optical Properties of Si-doped HfO2 Thin Films via Target Composition and Plasma Environment." Semiconductor Physics, Quantum Electronics & Optoelectronics, vol. 28, no. 4, 2025, p. 441, https://doi.org/10.15407/spqeo28.04.441.