Tailoring structural and optical properties of Si-doped HfO2 thin films via target composition and plasma environment.
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| Title: | Tailoring structural and optical properties of Si-doped HfO |
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| Alternate Title: | Вплив хімічного складу мішені та газової плазми на оптичні та структурні характеристики плівок HfO2, легованих кремнієм. |
| Authors: | Khomenkov, D. V.1 dmkhomen@gmail.com, Ponomaryov, S. S.2 s.s.ponomaryov@gmail.com, Portier, X.3 xavier.portier@ensicaen.fr, Melnichuk, L. Yu.1 lyu.melnichuk@gmail.com, Khomenkova, L. Yu.2,4 khomen@ukr.net, Gourbilleau, F.3 fabrice.gourbilleau@ensicaen.fr, Melnichuk, O. V.1 mov310310@gmail.com |
| Source: | Semiconductor Physics, Quantum Electronics & Optoelectronics. 2025, Vol. 28 Issue 4, p441-448. 8p. |
| Subjects: | Refractive index, Reactive sputtering, Magnetron sputtering, Thin films, Glass coatings, Optical properties, Plasma deposition, Microstructure |
| Abstract: | Optical and structural properties of as-deposited Si-doped HfO2 thin films were investigated as a function of target composition, substrate temperature (100...500 °C), and plasma environment. The films were deposited on Si (100) substrates by RF magnetron sputtering from composite Si:HfO2 targets in either pure argon or argon-hydrogen plasma. The Si content in the films was varied by adjusting the target composition, the hydrogen fraction in the plasma, and the total pressure. TEM, FTIR, ellipsometry, and Auger electron spectroscopy revealed that the Si-doped films maintained chemical uniformity and dense amorphous structure. For deposition in pure Ar plasma at a total pressure of 0.04 mbar, increasing Si incorporation led to formation of homogeneous amorphous films with a refractive index higher than that of pure HfO2 (2.42 vs. 1.98 at 1.95 eV). Deposition in Ar-H2 plasma enabled further raise of the refractive index up to 2.75 through variation of the hydrogen flow rate. An even higher refractive index up to 3.4 was achieved by lowering the total pressure to 0.02 mbar and/or by increasing the substrate temperature. However, the latter resulted in a reduced film growth rate. The extended structure-zone model provided a consistent framework to interpret the observed film morphologies, linking adatom mobility, ion bombardment, and film densification to the deposition parameters. The novelty of this work is in demonstrating that hydrogen-assisted reactive sputtering enables in situ control of the Si content during deposition without need to modify the target composition. These findings show that the microstructure and optical response of Si-doped HfO2 films can be systematically tailored, offering a route for designing high-index amorphous coatings suitable for optical and microelectronic applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Semiconductor Physics, Quantum Electronics & Optoelectronics is the property of V. Lashkaryov Institute of Semiconductor Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 192366894 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Tailoring structural and optical properties of Si-doped HfO<subscript>2</subscript> thin films via target composition and plasma environment. – Name: TitleAlt Label: Alternate Title Group: TiAlt Data: Вплив хімічного складу мішені та газової плазми на оптичні та структурні характеристики плівок HfO2, легованих кремнієм. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Khomenkov%2C+D%2E+V%2E%22">Khomenkov, D. V.</searchLink><relatesTo>1</relatesTo><i> dmkhomen@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Ponomaryov%2C+S%2E+S%2E%22">Ponomaryov, S. S.</searchLink><relatesTo>2</relatesTo><i> s.s.ponomaryov@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Portier%2C+X%2E%22">Portier, X.</searchLink><relatesTo>3</relatesTo><i> xavier.portier@ensicaen.fr</i><br /><searchLink fieldCode="AR" term="%22Melnichuk%2C+L%2E+Yu%2E%22">Melnichuk, L. Yu.</searchLink><relatesTo>1</relatesTo><i> lyu.melnichuk@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Khomenkova%2C+L%2E+Yu%2E%22">Khomenkova, L. Yu.</searchLink><relatesTo>2,4</relatesTo><i> khomen@ukr.net</i><br /><searchLink fieldCode="AR" term="%22Gourbilleau%2C+F%2E%22">Gourbilleau, F.</searchLink><relatesTo>3</relatesTo><i> fabrice.gourbilleau@ensicaen.fr</i><br /><searchLink fieldCode="AR" term="%22Melnichuk%2C+O%2E+V%2E%22">Melnichuk, O. V.</searchLink><relatesTo>1</relatesTo><i> mov310310@gmail.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductor+Physics%2C+Quantum+Electronics+%26+Optoelectronics%22">Semiconductor Physics, Quantum Electronics & Optoelectronics</searchLink>. 2025, Vol. 28 Issue 4, p441-448. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Refractive+index%22">Refractive index</searchLink><br /><searchLink fieldCode="DE" term="%22Reactive+sputtering%22">Reactive sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Glass+coatings%22">Glass coatings</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+deposition%22">Plasma deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Microstructure%22">Microstructure</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Optical and structural properties of as-deposited Si-doped HfO2 thin films were investigated as a function of target composition, substrate temperature (100...500 °C), and plasma environment. The films were deposited on Si (100) substrates by RF magnetron sputtering from composite Si:HfO2 targets in either pure argon or argon-hydrogen plasma. The Si content in the films was varied by adjusting the target composition, the hydrogen fraction in the plasma, and the total pressure. TEM, FTIR, ellipsometry, and Auger electron spectroscopy revealed that the Si-doped films maintained chemical uniformity and dense amorphous structure. For deposition in pure Ar plasma at a total pressure of 0.04 mbar, increasing Si incorporation led to formation of homogeneous amorphous films with a refractive index higher than that of pure HfO2 (2.42 vs. 1.98 at 1.95 eV). Deposition in Ar-H2 plasma enabled further raise of the refractive index up to 2.75 through variation of the hydrogen flow rate. An even higher refractive index up to 3.4 was achieved by lowering the total pressure to 0.02 mbar and/or by increasing the substrate temperature. However, the latter resulted in a reduced film growth rate. The extended structure-zone model provided a consistent framework to interpret the observed film morphologies, linking adatom mobility, ion bombardment, and film densification to the deposition parameters. The novelty of this work is in demonstrating that hydrogen-assisted reactive sputtering enables in situ control of the Si content during deposition without need to modify the target composition. These findings show that the microstructure and optical response of Si-doped HfO2 films can be systematically tailored, offering a route for designing high-index amorphous coatings suitable for optical and microelectronic applications. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Semiconductor Physics, Quantum Electronics & Optoelectronics is the property of V. Lashkaryov Institute of Semiconductor Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.15407/spqeo28.04.441 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 441 Subjects: – SubjectFull: Refractive index Type: general – SubjectFull: Reactive sputtering Type: general – SubjectFull: Magnetron sputtering Type: general – SubjectFull: Thin films Type: general – SubjectFull: Glass coatings Type: general – SubjectFull: Optical properties Type: general – SubjectFull: Plasma deposition Type: general – SubjectFull: Microstructure Type: general Titles: – TitleFull: Tailoring structural and optical properties of Si-doped HfO2 thin films via target composition and plasma environment. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Khomenkov, D. V. – PersonEntity: Name: NameFull: Ponomaryov, S. S. – PersonEntity: Name: NameFull: Portier, X. – PersonEntity: Name: NameFull: Melnichuk, L. Yu. – PersonEntity: Name: NameFull: Khomenkova, L. Yu. – PersonEntity: Name: NameFull: Gourbilleau, F. – PersonEntity: Name: NameFull: Melnichuk, O. V. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Text: 2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 15608034 Numbering: – Type: volume Value: 28 – Type: issue Value: 4 Titles: – TitleFull: Semiconductor Physics, Quantum Electronics & Optoelectronics Type: main |
| ResultId | 1 |
