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Phase separation of Sb2Te films for phase change memory.

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Title: Phase separation of Sb2Te films for phase change memory.
Authors: Zheng, Panpan1 (AUTHOR), Chen, Leng1 (AUTHOR) lchen@ustb.edu.cn
Source: Applied Physics A: Materials Science & Processing. Mar2026, Vol. 132 Issue 3, p1-10. 10p.
Subjects: Phase separation, Phase change memory, X-ray photoelectron spectroscopy, Raman spectroscopy, Transmission electron microscopy, Van der Waals forces, X-ray diffraction, Antimony telluride
Abstract: In this work, we present direct evidence of phase separation in Sb2Te films considered for integration into phase change memory (PCM) cells. X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy dispersive spectrometer (EDS) experiments indicate that significant phase separation occurs in the Sb2Te films during annealing at 300 °C, leading to the formation of Sb and Sb2Te3 phases. By integrating insights from Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), we analyze the atomic vibrational states and bonding characteristics of the films. The results indicate that the mechanism underlying phase separation in Sb2Te films is primarily attributed to the rupture of van der Waals bonds between layers, accompanied by the formation of more stable covalent bonds at high temperatures. The findings from this work offer valuable guidance for developing PCM devices that are structurally stable. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 192420973
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  Data: Phase separation of Sb<subscript>2</subscript>Te films for phase change memory.
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  Data: <searchLink fieldCode="AR" term="%22Zheng%2C+Panpan%22">Zheng, Panpan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Leng%22">Chen, Leng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> lchen@ustb.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. Mar2026, Vol. 132 Issue 3, p1-10. 10p.
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  Data: <searchLink fieldCode="DE" term="%22Phase+separation%22">Phase separation</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Van+der+Waals+forces%22">Van der Waals forces</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+diffraction%22">X-ray diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Antimony+telluride%22">Antimony telluride</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this work, we present direct evidence of phase separation in Sb2Te films considered for integration into phase change memory (PCM) cells. X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy dispersive spectrometer (EDS) experiments indicate that significant phase separation occurs in the Sb2Te films during annealing at 300 °C, leading to the formation of Sb and Sb2Te3 phases. By integrating insights from Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), we analyze the atomic vibrational states and bonding characteristics of the films. The results indicate that the mechanism underlying phase separation in Sb2Te films is primarily attributed to the rupture of van der Waals bonds between layers, accompanied by the formation of more stable covalent bonds at high temperatures. The findings from this work offer valuable guidance for developing PCM devices that are structurally stable. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s00339-026-09402-8
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        Text: English
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      – SubjectFull: Phase separation
        Type: general
      – SubjectFull: Phase change memory
        Type: general
      – SubjectFull: X-ray photoelectron spectroscopy
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      – SubjectFull: Raman spectroscopy
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      – SubjectFull: Transmission electron microscopy
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      – SubjectFull: Van der Waals forces
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      – SubjectFull: X-ray diffraction
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      – SubjectFull: Antimony telluride
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            NameFull: Zheng, Panpan
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              M: 03
              Text: Mar2026
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              Y: 2026
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