A Broad-Band Self-Powered Photodetector Based on a MoTe 2 /Bi 2 Te 3 Heterojunction for Optical Imaging and Bias-Controlled Signal Modulation.
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| Title: | A Broad-Band Self-Powered Photodetector Based on a MoTe 2 /Bi 2 Te 3 Heterojunction for Optical Imaging and Bias-Controlled Signal Modulation. |
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| Authors: | Du, Shaoxiong1 (AUTHOR) dushaoxiong0402@outlook.com, Li, Kunle1,2 (AUTHOR), Li, Weijie1 (AUTHOR), Feng, Jiahui1,2 (AUTHOR), Sheng, Yunwei1 (AUTHOR), Tao, Lili1 (AUTHOR), Zheng, Zhaoqiang1 (AUTHOR), Song, Wei2 (AUTHOR), Zhao, Yu1 (AUTHOR) |
| Source: | Materials (1996-1944). Mar2026, Vol. 19 Issue 6, p1270. 13p. |
| Subjects: | Photodetectors, Optical modulation, Photovoltaic effect, Photosensitivity, Photoelectricity, Optical images |
| Abstract: | Self-powered photodetectors are highly demanded in applications but often suffer from limited spectral absorption, slow response speed, and high dark currents. Two-dimensional van der Waals heterostructures have emerged as promising candidates owing to their designable structures and excellent performance. Herein, we construct a MoTe2/Bi2Te3 heterostructure and investigate its photoelectric properties. At zero bias, it exhibits a broad photovoltaic response ranging from 405 to 1550 nm. Benefiting from the interfacial built-in electric field, it achieves a responsivity of 1.38 A/W and a detectivity of 1.90 × 1012 Jones at 532 nm and retains 174.56 mA/W and 2.4 × 1011 Jones at 1060 nm, together with a low dark current of 1.6 × 10−12 A. Upon a reverse bias of −1 V and 532 nm laser illumination at an intensity of 19.0 W/m2, the responsivity is further boosted to 36.22 A/W, accompanied by rise and decay times of 32 ms and 33 ms, respectively. Taking advantage of the distinct optical switching ratios at zero/non-zero biases, application in optical imaging and bias-controlled signal modulation is realized, highlighting the heterojunction's potential as a broadband self-powered photodetector. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Self-powered photodetectors are highly demanded in applications but often suffer from limited spectral absorption, slow response speed, and high dark currents. Two-dimensional van der Waals heterostructures have emerged as promising candidates owing to their designable structures and excellent performance. Herein, we construct a MoTe2/Bi2Te3 heterostructure and investigate its photoelectric properties. At zero bias, it exhibits a broad photovoltaic response ranging from 405 to 1550 nm. Benefiting from the interfacial built-in electric field, it achieves a responsivity of 1.38 A/W and a detectivity of 1.90 × 1012 Jones at 532 nm and retains 174.56 mA/W and 2.4 × 1011 Jones at 1060 nm, together with a low dark current of 1.6 × 10−12 A. Upon a reverse bias of −1 V and 532 nm laser illumination at an intensity of 19.0 W/m2, the responsivity is further boosted to 36.22 A/W, accompanied by rise and decay times of 32 ms and 33 ms, respectively. Taking advantage of the distinct optical switching ratios at zero/non-zero biases, application in optical imaging and bias-controlled signal modulation is realized, highlighting the heterojunction's potential as a broadband self-powered photodetector. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 19961944 |
| DOI: | 10.3390/ma19061270 |
