Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications.
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| Title: | Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging Applications. |
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| Authors: | Zhao, Xuewei1 (AUTHOR), Miao, Yuanhao1 (AUTHOR), Su, Jiale1 (AUTHOR), Du, Junhao1 (AUTHOR), Ren, Yuhui1 (AUTHOR), Li, Ben1 (AUTHOR), Dong, Tianyu1 (AUTHOR), Duan, Xiangliang1 (AUTHOR), Su, Xueyin1 (AUTHOR), Radamson, Henry H. (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 5, p295. 18p. |
| Subjects: | Photodetectors, Ion implantation, Photoluminescence, Doping agents (Chemistry), Infrared imaging, N-type semiconductors |
| Abstract: | In this study, in situ P-doping of Ge-based layers has been studied and compared with implanted layer profiles acting as absorbent top layer in PIN photodetectors. Several structures containing multilayers of n+-Ge/i-Ge, n+-GeSi/i-Ge, and n+-Ge/i-GeSi, were designed to regulate dopant out-diffusion and interface quality. The purpose of this study is to make an optimized n-type doping layer for PIN photodetectors with low dark current, high responsivity, and high quantum efficiency operating in short wavelength infrared (SWIR) region. The Ge-based structure on Si substrate was transferred to oxidized Si substrate and was finally back-etched from Si to form Ge-on-insulator (GOI) substrate. Comprehensive characterization using high-resolution X-ray diffraction (HR-XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and photoluminescence (PL) have been applied at the first stage of our work. The initial Ge layer contains tensile strain of 0.15–0.17%. PL measurements further indicate a redshift of the Γ-LH transition and carrier-concentration-induced quenching at high doping levels, highlighting the competing effects of band filling and non-radiative recombination in heavily n-doped Ge structures. To circumvent this fundamental trade-off, we devised a decoupled device strategy in which the active absorption region employs an intrinsic Ge/GeSi nanoscale multilayer structure to preserve crystal and interface quality. Although, the epitaxial growth parameters were on the optimized conditions, still out-diffusion (in form of segregation and auto-doping) of P could not be impeded. Our final n-type layer in PIN structure was formed by implantation. This approach yields high-performance photodetectors with a peak responsivity of 0.99 A/W at 1550 nm, a corresponding external quantum efficiency of 79%, and low specific contact resistivities of 2.66 × 10−6 Ω·cm2 (n-type) and 1.38 × 10−8 Ω·cm2 (p-type). This work demonstrates that the strategic combination of multilayer/interface engineering and ion-implantation-based doping is a highly effective strategy for tailoring the optoelectronic properties of Ge-based nanomaterials for high-performance SWIR photodetection. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | In this study, in situ P-doping of Ge-based layers has been studied and compared with implanted layer profiles acting as absorbent top layer in PIN photodetectors. Several structures containing multilayers of n+-Ge/i-Ge, n+-GeSi/i-Ge, and n+-Ge/i-GeSi, were designed to regulate dopant out-diffusion and interface quality. The purpose of this study is to make an optimized n-type doping layer for PIN photodetectors with low dark current, high responsivity, and high quantum efficiency operating in short wavelength infrared (SWIR) region. The Ge-based structure on Si substrate was transferred to oxidized Si substrate and was finally back-etched from Si to form Ge-on-insulator (GOI) substrate. Comprehensive characterization using high-resolution X-ray diffraction (HR-XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and photoluminescence (PL) have been applied at the first stage of our work. The initial Ge layer contains tensile strain of 0.15–0.17%. PL measurements further indicate a redshift of the Γ-LH transition and carrier-concentration-induced quenching at high doping levels, highlighting the competing effects of band filling and non-radiative recombination in heavily n-doped Ge structures. To circumvent this fundamental trade-off, we devised a decoupled device strategy in which the active absorption region employs an intrinsic Ge/GeSi nanoscale multilayer structure to preserve crystal and interface quality. Although, the epitaxial growth parameters were on the optimized conditions, still out-diffusion (in form of segregation and auto-doping) of P could not be impeded. Our final n-type layer in PIN structure was formed by implantation. This approach yields high-performance photodetectors with a peak responsivity of 0.99 A/W at 1550 nm, a corresponding external quantum efficiency of 79%, and low specific contact resistivities of 2.66 × 10−6 Ω·cm2 (n-type) and 1.38 × 10−8 Ω·cm2 (p-type). This work demonstrates that the strategic combination of multilayer/interface engineering and ion-implantation-based doping is a highly effective strategy for tailoring the optoelectronic properties of Ge-based nanomaterials for high-performance SWIR photodetection. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano16050295 |
