View in EDS HTML Full Text PDF Full Text

Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging.

Saved in:
Bibliographic Details
Title: Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging.
Authors: Su, Jiale1 (AUTHOR), Li, Ben1,2 (AUTHOR), Ren, Yuhui1,2 (AUTHOR), Du, Junhao1,2 (AUTHOR), Duan, Xiangliang1 (AUTHOR), Dong, Tianyu1 (AUTHOR), Su, Xueyin1 (AUTHOR), Ye, Tianchun1 (AUTHOR), Zhao, Xuewei1 (AUTHOR), Miao, Yuanhao1 (AUTHOR), Radamson, Henry H.1,2 (AUTHOR)
Source: Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 5, p316. 15p.
Subjects: Photodetectors, Dark currents (Electric), Infrared imaging, Optical resonators, Wavelengths, Surface passivation
Abstract: High-resolution short-wave infrared (SWIR) imaging requires photodetectors (PDs) with simultaneously low dark current and high responsivity. To achieve this goal, we demonstrate low-defect bulk germanium-on-insulator (bulk-GeOI) PDs designed for enhanced 1550 nm absorption and suppressed dark current via a resonant cavity and low-defect material platform. Devices were fabricated by direct bonding low-defect bulk Ge and thinning it to ~1300 nm, with an intrinsic layer thickness of only 800 nm. This design avoids epitaxial defects to lower intrinsic dark current while forming a resonant cavity for enhanced responsivity at 1550 nm. Precise doping and Al2O3/Si3N4 bilayer sidewall passivation were employed. From a design perspective, using low-defect bulk Ge minimizes the defects from epitaxial growth and reduces intrinsic dark current, while thinning the Ge layer enhances the resonant cavity effect to improve 1550 nm responsivity. Experimentally, despite the thin absorbing layer, our devices achieved nA-level dark currents (e.g., 18 nA at −1 V for 10 μm devices) alongside high responsivities. Detailed analysis indicates that this dark current is predominantly attributed to surface and sidewall defects from mesa etching, with minimal contribution from low-defect bulk material defects, validating the effectiveness of the bulk-Ge approach in suppressing intrinsic bulk leakage. Optically, the devices achieved high responsivities of 0.85 A/W (1310 nm) and 0.72 A/W (1550 nm), corresponding to external quantum efficiencies of 80.6% and 57.7%, respectively. This work establishes the bulk-GeOI platform as a promising path toward high-performance SWIR PDs, successfully decoupling high responsivity from bulk leakage and paving the way for future gains through refined surface and interface engineering. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 192622450
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Su%2C+Jiale%22">Su, Jiale</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Ben%22">Li, Ben</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ren%2C+Yuhui%22">Ren, Yuhui</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Du%2C+Junhao%22">Du, Junhao</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Duan%2C+Xiangliang%22">Duan, Xiangliang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dong%2C+Tianyu%22">Dong, Tianyu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Su%2C+Xueyin%22">Su, Xueyin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ye%2C+Tianchun%22">Ye, Tianchun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhao%2C+Xuewei%22">Zhao, Xuewei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Miao%2C+Yuanhao%22">Miao, Yuanhao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Radamson%2C+Henry+H%2E%22">Radamson, Henry H.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Mar2026, Vol. 16 Issue 5, p316. 15p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Photodetectors%22">Photodetectors</searchLink><br /><searchLink fieldCode="DE" term="%22Dark+currents+%28Electric%29%22">Dark currents (Electric)</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+imaging%22">Infrared imaging</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+resonators%22">Optical resonators</searchLink><br /><searchLink fieldCode="DE" term="%22Wavelengths%22">Wavelengths</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+passivation%22">Surface passivation</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: High-resolution short-wave infrared (SWIR) imaging requires photodetectors (PDs) with simultaneously low dark current and high responsivity. To achieve this goal, we demonstrate low-defect bulk germanium-on-insulator (bulk-GeOI) PDs designed for enhanced 1550 nm absorption and suppressed dark current via a resonant cavity and low-defect material platform. Devices were fabricated by direct bonding low-defect bulk Ge and thinning it to ~1300 nm, with an intrinsic layer thickness of only 800 nm. This design avoids epitaxial defects to lower intrinsic dark current while forming a resonant cavity for enhanced responsivity at 1550 nm. Precise doping and Al2O3/Si3N4 bilayer sidewall passivation were employed. From a design perspective, using low-defect bulk Ge minimizes the defects from epitaxial growth and reduces intrinsic dark current, while thinning the Ge layer enhances the resonant cavity effect to improve 1550 nm responsivity. Experimentally, despite the thin absorbing layer, our devices achieved nA-level dark currents (e.g., 18 nA at −1 V for 10 μm devices) alongside high responsivities. Detailed analysis indicates that this dark current is predominantly attributed to surface and sidewall defects from mesa etching, with minimal contribution from low-defect bulk material defects, validating the effectiveness of the bulk-Ge approach in suppressing intrinsic bulk leakage. Optically, the devices achieved high responsivities of 0.85 A/W (1310 nm) and 0.72 A/W (1550 nm), corresponding to external quantum efficiencies of 80.6% and 57.7%, respectively. This work establishes the bulk-GeOI platform as a promising path toward high-performance SWIR PDs, successfully decoupling high responsivity from bulk leakage and paving the way for future gains through refined surface and interface engineering. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=192622450
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/nano16050316
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 15
        StartPage: 316
    Subjects:
      – SubjectFull: Photodetectors
        Type: general
      – SubjectFull: Dark currents (Electric)
        Type: general
      – SubjectFull: Infrared imaging
        Type: general
      – SubjectFull: Optical resonators
        Type: general
      – SubjectFull: Wavelengths
        Type: general
      – SubjectFull: Surface passivation
        Type: general
    Titles:
      – TitleFull: Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Su, Jiale
      – PersonEntity:
          Name:
            NameFull: Li, Ben
      – PersonEntity:
          Name:
            NameFull: Ren, Yuhui
      – PersonEntity:
          Name:
            NameFull: Du, Junhao
      – PersonEntity:
          Name:
            NameFull: Duan, Xiangliang
      – PersonEntity:
          Name:
            NameFull: Dong, Tianyu
      – PersonEntity:
          Name:
            NameFull: Su, Xueyin
      – PersonEntity:
          Name:
            NameFull: Ye, Tianchun
      – PersonEntity:
          Name:
            NameFull: Zhao, Xuewei
      – PersonEntity:
          Name:
            NameFull: Miao, Yuanhao
      – PersonEntity:
          Name:
            NameFull: Radamson, Henry H.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 20794991
          Numbering:
            – Type: volume
              Value: 16
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Nanomaterials (2079-4991)
              Type: main
ResultId 1