Beyond Point-like Defects in Bulk Semiconductors: Junction Spectroscopy Techniques for Perovskite Solar Cells and 2D Materials.
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| Title: | Beyond Point-like Defects in Bulk Semiconductors: Junction Spectroscopy Techniques for Perovskite Solar Cells and 2D Materials. |
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| Authors: | Capan, Ivana1 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 6, p350. 20p. |
| Subjects: | Semiconductor defects, Semiconductor junctions, Solar cells, Two-dimensional materials (Nanotechnology), Semiconductor devices, Semiconductors |
| Abstract: | Junction spectroscopy techniques (JSTs) are powerful tools for investigating electrically active defects in semiconductors. Originally developed to study point-like defects in bulk semiconductors, JSTs have since been extended to increasingly complex systems, providing valuable insights into defect energetics and interactions. This review paper outlines the fundamental principles of JSTs and critically examines their application to emerging materials, such as perovskite solar cells and two-dimensional (2D) materials. By highlighting both the capabilities and limitations of JSTs in these non-classical systems, the review demonstrates their continued relevance and important role in advancing next-generation semiconductor materials and devices. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Junction spectroscopy techniques (JSTs) are powerful tools for investigating electrically active defects in semiconductors. Originally developed to study point-like defects in bulk semiconductors, JSTs have since been extended to increasingly complex systems, providing valuable insights into defect energetics and interactions. This review paper outlines the fundamental principles of JSTs and critically examines their application to emerging materials, such as perovskite solar cells and two-dimensional (2D) materials. By highlighting both the capabilities and limitations of JSTs in these non-classical systems, the review demonstrates their continued relevance and important role in advancing next-generation semiconductor materials and devices. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano16060350 |
