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On-Chip Strained Germanium Lasers: A Review.

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Title: On-Chip Strained Germanium Lasers: A Review.
Authors: Liu, Ronghuan1 (AUTHOR), Song, Weiqi2 (AUTHOR), Zheng, Zi-Wei1 (AUTHOR) zhengziwei@tsinghua.org.cn
Source: Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 6, p356. 25p.
Subjects: Semiconductor lasers, Nanowires, Band gaps, Strain theory (Chemistry), Optical communications, Integrated optics
Abstract: The 100 GHz-class ultrafast photonic integrated circuit (PIC) positions itself as a promising technology in the post-Moore era, when the bandwidth limit of metallic interconnections constrains current electronic integrated circuits. Nevertheless, the lack of an effective on-chip, CMOS-compatible laser source challenges the ongoing development of PIC. Germanium straintronics facilitate bandgap transformation from indirect to direct, thereby enabling effective band-to-band radiative recombination. Some parameters, such as nanowire diameters or crystalline orientation and strain direction, have a profound effect on the bandgap transformation of Ge nanowires. In this review, we will discuss changes in the fundamental physical properties of Ge nanowires under strain, including mechanical, electronic, optical, and thermal properties. Subsequently, we summarize common methods for strain engineering, as well as novel approaches that have emerged in recent years. Some notable application cases reported in the last few decades will be discussed in detail. This review may fill knowledge gaps and provide a solid background for forthcoming investigations of on-chip strained Ge lasers. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="AR" term="%22Liu%2C+Ronghuan%22">Liu, Ronghuan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Song%2C+Weiqi%22">Song, Weiqi</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zheng%2C+Zi-Wei%22">Zheng, Zi-Wei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> zhengziwei@tsinghua.org.cn</i>
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  Data: <searchLink fieldCode="DE" term="%22Semiconductor+lasers%22">Semiconductor lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Strain+theory+%28Chemistry%29%22">Strain theory (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+communications%22">Optical communications</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+optics%22">Integrated optics</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The 100 GHz-class ultrafast photonic integrated circuit (PIC) positions itself as a promising technology in the post-Moore era, when the bandwidth limit of metallic interconnections constrains current electronic integrated circuits. Nevertheless, the lack of an effective on-chip, CMOS-compatible laser source challenges the ongoing development of PIC. Germanium straintronics facilitate bandgap transformation from indirect to direct, thereby enabling effective band-to-band radiative recombination. Some parameters, such as nanowire diameters or crystalline orientation and strain direction, have a profound effect on the bandgap transformation of Ge nanowires. In this review, we will discuss changes in the fundamental physical properties of Ge nanowires under strain, including mechanical, electronic, optical, and thermal properties. Subsequently, we summarize common methods for strain engineering, as well as novel approaches that have emerged in recent years. Some notable application cases reported in the last few decades will be discussed in detail. This review may fill knowledge gaps and provide a solid background for forthcoming investigations of on-chip strained Ge lasers. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano16060356
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      – Code: eng
        Text: English
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        PageCount: 25
        StartPage: 356
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      – SubjectFull: Semiconductor lasers
        Type: general
      – SubjectFull: Nanowires
        Type: general
      – SubjectFull: Band gaps
        Type: general
      – SubjectFull: Strain theory (Chemistry)
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      – SubjectFull: Optical communications
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      – SubjectFull: Integrated optics
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      – TitleFull: On-Chip Strained Germanium Lasers: A Review.
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            NameFull: Song, Weiqi
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            – D: 15
              M: 03
              Text: Mar2026
              Type: published
              Y: 2026
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