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CMOS-Compatible Fabrication Module for Sub-100 nm TiN and TaN Pillar Electrodes for Carbon Nanotube Test Structures.

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Title: CMOS-Compatible Fabrication Module for Sub-100 nm TiN and TaN Pillar Electrodes for Carbon Nanotube Test Structures.
Authors: Chen, Guohai1 (AUTHOR), Fujii, Takeshi1 (AUTHOR), Yamada, Takeo1 (AUTHOR), Hata, Kenji1 (AUTHOR)
Source: Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 6, p357. 11p.
Subjects: Titanium nitride, Electrodes, Nonvolatile random-access memory, Carbon nanotube testing, Electron beam lithography, Plasma etching, Nanotechnology, Nanofabrication
Abstract: We report a versatile, CMOS-compatible fabrication module for sub-100 nm TiN and TaN pillar electrodes, a key building block for sandwich-type test structures. As a demonstration, the electrodes were integrated into carbon nanotube-based nonvolatile random-access memory (CRAM) test structures. High-resolution hydrogen silsesquioxane (HSQ) masks defined by electron beam lithography were transferred into TiN films using optimized Ar/Cl2 inductively coupled plasma reactive ion etching. Optical emission spectroscopy was used for real-time endpoint detection, ensuring precise etch control. The process achieved a TiN-to-HSQ selectivity of ~1.6 and reproducible nanoscale features with smooth sidewalls and an average taper angle of ~77°. Buffered hydrogen fluoride treatment effectively removed residual HSQ, revealing sharp TiN features and preserving pillar geometry. Atomic force microscopy (AFM) confirmed pillar height and profile fidelity, while conductive AFM verified electrical conductivity after planarization. The module was further demonstrated through the fabrication of TiN pillar arrays, TaN pillars, and sub-100 nm TiN line arrays. A CRAM test structure incorporating TiN pillars exhibited preliminary switching, indicating that both the test structure and fabrication process are feasible. This fabrication module provides a reproducible platform for nanoscale TiN and TaN electrodes, supporting laboratory-scale research and providing a pathway toward future integration of emerging memory and nanoelectronic technologies. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: CMOS-Compatible Fabrication Module for Sub-100 nm TiN and TaN Pillar Electrodes for Carbon Nanotube Test Structures.
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  Data: <searchLink fieldCode="AR" term="%22Chen%2C+Guohai%22">Chen, Guohai</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fujii%2C+Takeshi%22">Fujii, Takeshi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yamada%2C+Takeo%22">Yamada, Takeo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hata%2C+Kenji%22">Hata, Kenji</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Mar2026, Vol. 16 Issue 6, p357. 11p.
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  Data: <searchLink fieldCode="DE" term="%22Titanium+nitride%22">Titanium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Electrodes%22">Electrodes</searchLink><br /><searchLink fieldCode="DE" term="%22Nonvolatile+random-access+memory%22">Nonvolatile random-access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Carbon+nanotube+testing%22">Carbon nanotube testing</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+beam+lithography%22">Electron beam lithography</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+etching%22">Plasma etching</searchLink><br /><searchLink fieldCode="DE" term="%22Nanotechnology%22">Nanotechnology</searchLink><br /><searchLink fieldCode="DE" term="%22Nanofabrication%22">Nanofabrication</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We report a versatile, CMOS-compatible fabrication module for sub-100 nm TiN and TaN pillar electrodes, a key building block for sandwich-type test structures. As a demonstration, the electrodes were integrated into carbon nanotube-based nonvolatile random-access memory (CRAM) test structures. High-resolution hydrogen silsesquioxane (HSQ) masks defined by electron beam lithography were transferred into TiN films using optimized Ar/Cl2 inductively coupled plasma reactive ion etching. Optical emission spectroscopy was used for real-time endpoint detection, ensuring precise etch control. The process achieved a TiN-to-HSQ selectivity of ~1.6 and reproducible nanoscale features with smooth sidewalls and an average taper angle of ~77°. Buffered hydrogen fluoride treatment effectively removed residual HSQ, revealing sharp TiN features and preserving pillar geometry. Atomic force microscopy (AFM) confirmed pillar height and profile fidelity, while conductive AFM verified electrical conductivity after planarization. The module was further demonstrated through the fabrication of TiN pillar arrays, TaN pillars, and sub-100 nm TiN line arrays. A CRAM test structure incorporating TiN pillars exhibited preliminary switching, indicating that both the test structure and fabrication process are feasible. This fabrication module provides a reproducible platform for nanoscale TiN and TaN electrodes, supporting laboratory-scale research and providing a pathway toward future integration of emerging memory and nanoelectronic technologies. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano16060357
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        Text: English
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      – SubjectFull: Nonvolatile random-access memory
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      – SubjectFull: Plasma etching
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      – SubjectFull: Nanotechnology
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      – SubjectFull: Nanofabrication
        Type: general
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      – TitleFull: CMOS-Compatible Fabrication Module for Sub-100 nm TiN and TaN Pillar Electrodes for Carbon Nanotube Test Structures.
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            NameFull: Chen, Guohai
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            NameFull: Fujii, Takeshi
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            NameFull: Yamada, Takeo
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              M: 03
              Text: Mar2026
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